NXP Semiconductors Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

BZW03-C43T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

30 mA

SINGLE

43 V

500 W

ZENER

10 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

20 ohm

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

60.7 V

40 V

SILICON

BZW03-C36/50112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

50.1 V

34 V

SILICON

BZW03-C39/30113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

54.1 V

37 V

SILICON

BZT03-C47

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

10 mA

SINGLE

47 V

300 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

6.3 %

175 Cel

45 ohm

E-LALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

65.5 V

44 V

SILICON

BZT03-C8V2T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

1200 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

12.3 V

7.7 V

SILICON

BZT03-C220T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

305 V

208 V

SILICON

PESD3V3L4UF-T4

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-65 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE

MO-252

12 V

5.32 V

SILICON

5.88 V

AEC-Q101

BZW03-C160/41112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

224 V

153 V

SILICON

PESD12VS4UD,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

200 W

14.5 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

24 V

12.5 V

e3

30

260

SILICON

16 V

BZW03-C15/30113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

20.9 V

13.8 V

SILICON

BZW03-C22/33113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

31 V

20.8 V

SILICON

BZW03-C430/40112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

603 V

400 V

SILICON

MMBZ18VAL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

18 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

14.5 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.36 W

TO-236AB

25 V

17.1 V

e3

30

260

SILICON

18.9 V

BZT03-C120

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

5 mA

SINGLE

120 V

300 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

250 ohm

E-LALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

167 V

114 V

SILICON

BZW03-C39/33113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

54.1 V

37 V

SILICON

BZW03-C100/20112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

139 V

94 V

SILICON

BZW03-C8V2/22112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

2400 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

12.3 V

7.7 V

SILICON

PESD2IVN-U

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

150 W

AVALANCHE

2

SMALL OUTLINE

26.5 V

150 Cel

-55 Cel

R-PDSO-G3

BIDIRECTIONAL

IEC-61643-321

28 V

SILICON

32 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

BZW03-C47/21113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

65.5 V

44 V

SILICON

BZW03-C36/41112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

50.1 V

34 V

SILICON

PESD3V3L1UL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

5.6 V

AVALANCHE

.3 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

11 V

5.3 V

e3

SILICON

6 V

BZW03-C10/21113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

40 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

14.8 V

9.4 V

SILICON

BZW03-C75T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

500 W

ZENER

1

LONG FORM

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

70 V

SILICON

BZW03-C510/30112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

707 V

480 V

SILICON

BZW03-C300/22112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

419 V

280 V

SILICON

BZW03-C160/20133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

224 V

153 V

SILICON

BZW03-C220

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

5 mA

SINGLE

220 V

500 W

ZENER

10 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

700 ohm

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

305 V

208 V

SILICON

PESD5V0L4UW

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-F5

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

13 V

6.46 V

e3

30

260

SILICON

7.14 V

IP4294CZ10-TBR,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

1

UNIDIRECTIONAL

6 V

e4

30

260

SILICON

IEC-60134

PESD5V0X1BQ,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

9.5 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-F3

1

BIDIRECTIONAL

Not Qualified

5.8 V

e3

30

260

SILICON

9.5 V

BZW03-C120/20113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

167 V

114 V

SILICON

BZW03-C47/30113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

65.5 V

44 V

SILICON

PSMA36A/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

36 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

40 V

SILICON

PESD5V0V4UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

6.8 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

13 V

6.4 V

e3

30

260

SILICON

7.2 V

BZW03-C160/21133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

224 V

153 V

SILICON

PESD5V0F5UF,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

BZW03-C43/21133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

60.7 V

40 V

SILICON

BZW03-C270/50112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

380 V

251 V

SILICON

BZW03-C13

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

100 mA

SINGLE

13 V

500 W

ZENER

10 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

2.5 ohm

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

18.9 V

12.4 V

SILICON

PESD3V3U1BCSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

4.5 V

SILICON

8 V

IEC-60134; IEC-61000-4-2, 4-5

IP4285CZ6-TD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

85 Cel

-40 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

BZW03-C43/21113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

60.7 V

40 V

SILICON

BZW03-C100/50112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

139 V

94 V

SILICON

BZW03-C360/50112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

498 V

340 V

SILICON

BZW03-C82/21113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

114 V

77 V

SILICON

BZW03-C220/41112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

305 V

208 V

SILICON

MMBZ15VDL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

12.8 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

21.2 V

SILICON

BZW03-C200/40133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

276 V

188 V

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.