NXP Semiconductors Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

BZT03-C33AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

46.2 V

31 V

SILICON

PSMA22A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

24.4 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

22 V

R-PDSO-C2

1

UNIDIRECTIONAL

Not Qualified

DO-214AC

35.5 V

24.4 V

SILICON

BZW03-C16/41112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

22.9 V

15.3 V

SILICON

BZW03-C7V5/41112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

3000 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

11.3 V

7 V

SILICON

BZW03-C100/30133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

139 V

94 V

SILICON

PESD1LINT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

27.8 V

Transient Suppressors

24 V

BIDIRECTIONAL

70 V

BZW03-C100/20133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

139 V

94 V

SILICON

BZW03-C180/22133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

249 V

168 V

SILICON

MMBZ18VCL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

14.5 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

25 V

e3

30

260

SILICON

BZW03-C7V5/21113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

3000 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

11.3 V

7 V

SILICON

MMBZ33VAL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

33 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

26 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.36 W

TO-236AB

46 V

31.35 V

e3

30

260

SILICON

34.65 V

PUSBM30VX4-TL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

100 W

AVALANCHE

2

SMALL OUTLINE

30 V

85 Cel

-30 Cel

S-PDSO-N6

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

32 V

SILICON

40 V

IEC-60134

BZW03-C9V1/33112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

100 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

13.3 V

8.5 V

SILICON

PESD5V0S1UA,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

890 W

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

UNIDIRECTIONAL

.5 W

19 V

6.2 V

e3

30

260

SILICON

7.3 V

AEC-Q101; IEC-60134

BZW03-C470/31112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

655 V

440 V

SILICON

BZT03-C110

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

5 mA

SINGLE

110 V

300 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5.5 %

175 Cel

250 ohm

E-LALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

152 V

104 V

SILICON

BZT03-C160T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

224 V

153 V

SILICON

BZW03-C43

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

30 mA

SINGLE

43 V

500 W

ZENER

10 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

20 ohm

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

60.7 V

40 V

SILICON

PESD3V3L4UWT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-65 Cel

R-PDSO-F5

UNIDIRECTIONAL

LOW CAPACITANCE

12 V

5.32 V

SILICON

5.88 V

MMBZ20VCL,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

20 V

AVALANCHE

.005 uA

2

17 V

SMALL OUTLINE

17 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

28 V

19 V

SILICON

21 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD5V0L4UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

13 V

6.46 V

e3

30

260

SILICON

7.14 V

AEC-Q101

BZW03-C12/40113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

20 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

17 V

11.4 V

SILICON

BZW03-C11/41113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

30 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

15.7 V

10.4 V

SILICON

BZW03-C120/40133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

167 V

114 V

SILICON

BZW03-C47/31113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

65.5 V

44 V

SILICON

IP4223CZ6

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

TIN

R-PDSO-G6

UNIDIRECTIONAL

LOW CAPACITANCE

6 V

e3

SILICON

9 V

BZW03-C36/21113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

50.1 V

34 V

SILICON

BZW03-C8V2/33133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

2400 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

12.3 V

7.7 V

SILICON

BZW03-C470/30113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

655 V

440 V

SILICON

BZW03-C12/31112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

20 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

17 V

11.4 V

SILICON

MMBZ18VCL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

14.5 V

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

TO-236AB

25 V

e3

30

260

SILICON

BZW03-C330/30133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

459 V

310 V

SILICON

BZW03-C110/20112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

152 V

104 V

SILICON

MMBZ20VCL/DG,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

20 V

AVALANCHE

.005 uA

2

17 V

SMALL OUTLINE

17 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

28 V

19 V

SILICON

21 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

BZW03-C15/20113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

20.9 V

13.8 V

SILICON

BZW03-C20/31113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

28.4 V

18.8 V

SILICON

BZW03-C56/41112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

78.6 V

52 V

SILICON

BZW03-C56/20133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

78.6 V

52 V

SILICON

BZW03-C240/21113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

336 V

228 V

SILICON

PSMA60A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

66.7 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

60 V

R-PDSO-C2

1

UNIDIRECTIONAL

Not Qualified

DO-214AC

96.8 V

66.7 V

SILICON

BZW03-C51/31133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

70.8 V

48 V

SILICON

BZA956AVL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

6 W

5.6 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5.88 V

150 Cel

Tin (Sn)

R-PDSO-F5

1

UNIDIRECTIONAL

Not Qualified

.335 W

e3

30

260

SILICON

BZW03-C24/33133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

33.8 V

22.8 V

SILICON

BZW03-C510/21133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

707 V

480 V

SILICON

PESD15VS5UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

200 W

18 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

15 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

33 V

17 V

e3

30

260

SILICON

19 V

BZW03-C20/33112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

28.4 V

18.8 V

SILICON

BZW03-C43/40133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

60.7 V

40 V

SILICON

PESD5V0V2BM,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

CATHODE

IEC-61643-321

5.5 V

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.