NXP Semiconductors Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

BZW03-C9V1/31113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

100 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

13.3 V

8.5 V

SILICON

BZW03-C33/21112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

46.2 V

31 V

SILICON

BZT03-C360AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

1

LONG FORM

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

340 V

SILICON

PESD5V0R1BSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

IEC-60134

BZA820A,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

17 W

20 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

TIN

R-PDSO-G5

UNIDIRECTIONAL

Not Qualified

.335 W

19 V

e3

SILICON

21 V

BZW03-C68/41113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

94.4 V

64 V

SILICON

BZW03-C180/22113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

249 V

168 V

SILICON

BZW03-C10/20133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

40 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

14.8 V

9.4 V

SILICON

PSMA78A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

86.7 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

78 V

R-PDSO-C2

1

UNIDIRECTIONAL

Not Qualified

DO-214AC

126 V

86.7 V

SILICON

BZW03-C130/20133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

185 V

124 V

SILICON

BZW03-C56/40112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

78.6 V

52 V

SILICON

BZW03-C120/30112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

167 V

114 V

SILICON

BZW03-C160/30113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

224 V

153 V

SILICON

BZW03-C200/31112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

276 V

188 V

SILICON

PESD5V0U2BM

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N3

1

UNIDIRECTIONAL

Not Qualified

e3

30

260

SILICON

BZT03-C240AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

336 V

228 V

SILICON

BZW03-C270/31112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

380 V

251 V

SILICON

PESD3V3L1UB,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

5.6 V

AVALANCHE

.3 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

R-PDSO-F2

UNIDIRECTIONAL

LOW CAPACITANCE

11 V

5.3 V

SILICON

6 V

AEC-Q101; IEC-60134

BZT03-C68AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

94.4 V

64 V

SILICON

BZW03-C11/21113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

30 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

15.7 V

10.4 V

SILICON

BZT03-C360

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

Transient Suppressors

360 V

175 Cel

E-LALF-W2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

498 V

340 V

SILICON

BZW03-C68/50112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

94.4 V

64 V

SILICON

BZW03-C390/33112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

537 V

370 V

SILICON

BZT03-C390AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

1

LONG FORM

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

370 V

SILICON

PSMA26A/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

26 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

28.9 V

SILICON

BZW03-C180/20112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

249 V

168 V

SILICON

BZW03-C16/22113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

22.9 V

15.3 V

SILICON

IP4283CZ10-TT,118

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

SMALL OUTLINE

Transient Suppressors

NICKEL PALLADIUM GOLD

S-PDSO-G10

1

UNIDIRECTIONAL

LOW CAPACITANCE

8 V

6 V

e4

30

260

SILICON

9 V

PESD5V0X1UALD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5.5 V

150 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

5.8 V

e3

SILICON

10 V

BZW03-C82/33112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

114 V

77 V

SILICON

BZW03-C39/30112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

54.1 V

37 V

SILICON

BZW03-C150

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

8 mA

SINGLE

150 V

500 W

ZENER

10 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

330 ohm

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

204 V

138 V

SILICON

PESD5V0F5UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

CHIP CARRIER

5 V

150 Cel

-55 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

7.5 V

e3

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

BZW03-C36/31133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

50.1 V

34 V

SILICON

BZW03-C43/50133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

60.7 V

40 V

SILICON

BZW03-C100/31133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

139 V

94 V

SILICON

PESD5V0S2UQT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

6.8 V

Transient Suppressors

5 V

UNIDIRECTIONAL

20 V

BZW03-C20/20133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

28.4 V

18.8 V

SILICON

PSMA30A/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

30 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

33.3 V

SILICON

BZW03-C130/40113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

185 V

124 V

SILICON

BZW03-C11/50112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

30 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

15.7 V

10.4 V

SILICON

BZW03-C110/22113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

152 V

104 V

SILICON

BZW03-C51T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

500 W

ZENER

1

LONG FORM

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

48 V

SILICON

BZW03-C240/41113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

336 V

228 V

SILICON

BZW03-C360/50133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

498 V

340 V

SILICON

BZW03-C20/20113

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

28.4 V

18.8 V

SILICON

BZW03-C10/31112

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

40 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

14.8 V

9.4 V

SILICON

BZW03-C18/40133

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1000 W

AVALANCHE

10 uA

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.75 W

25.6 V

16.8 V

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.