3 Varactor Diodes 585

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Reverse Recovery Time	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB901212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE						R-PDSO-G3		Not Qualified											SILICON	12
BB207,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		81 pF		TO-236AB	6.17 %			e3	30	260	SILICON	2.6
BB200,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE			85 Cel	-55 Cel	TIN	R-PDSO-G3		Not Qualified		70 pF		TO-236AB	6 %	18 V		e3			SILICON	5
BBY39	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		ULTRA HIGH FREQUENCY				.00000001 uA	2	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3		Not Qualified		16.5 pF	MATCHED PAIR AVAILABLE	TO-236AB		30 V		e3			SILICON	8
BB804Y215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY				.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V					SILICON	1.65
BB204B-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		CYLINDRICAL						O-PBCY-T3		Not Qualified											SILICON	2.5
BB201	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	Tin (Sn)	R-PDSO-G3	1	Not Qualified		95 pF		TO-236AB	6.81 %			e3	30	260	SILICON	3.1
BB804T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY				.02 uA	2	16 V	SMALL OUTLINE	Varactors	18 V	100 Cel		MATTE TIN	R-PDSO-G3		Not Qualified		44.25 pF		TO-236AB	5.08 %	18 V		e3		260	SILICON	1.65
BB804G	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY					2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		45.75 pF			1.64 %	18 V					SILICON	1.65
BBY39-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		ULTRA HIGH FREQUENCY				.01 uA	2	28 V	SMALL OUTLINE			85 Cel			R-PDSO-G3		Not Qualified		16.5 pF	MATCHED PAIR AVAILABLE	TO-236AB		30 V					SILICON	8
BBY40	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY				.01 uA	1	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		29 pF		TO-236AB	10.34 %	30 V		e3	30	260	SILICON	5
BB804W215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY				.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V					SILICON	1.65
BB200	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	18 V	85 Cel	-55 Cel	MATTE TIN	R-PDSO-G3		Not Qualified		70 pF		TO-236AB	6 %	18 V		e3		260	SILICON	5
BBY42-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				.01 uA	1	28 V	SMALL OUTLINE			85 Cel			R-PDSO-G3		Not Qualified		24 pF		TO-236AB		30 V					SILICON	12
BBY42	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				.00000001 uA	1	28 V	SMALL OUTLINE	Varactors	30 V	85 Cel			R-PDSO-G3		Not Qualified		24 pF		TO-236AB		30 V					SILICON	12
BB804G215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY				.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V					SILICON	1.65
933879420215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY					2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		44.25 pF			5.08 %	18 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	1.65
BB804GT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY					2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		45.75 pF			1.64 %	18 V					SILICON	1.65
BB901-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				.01 uA	1	28 V	SMALL OUTLINE			85 Cel			R-PDSO-G3		Not Qualified		1.055 pF				30 V					SILICON	12
BBY31212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE						R-PDSO-G3		Not Qualified		16.5 pF									SILICON
BBY42TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE						R-PDSO-G3		Not Qualified											SILICON	12
BBY31	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY				.01 uA	1	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3		Not Qualified		16.5 pF			11.11 %	30 V		e3			SILICON
BB804R235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY				.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V					SILICON	1.65
BB804,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY				.02 uA	2	16 V	SMALL OUTLINE	Varactors	18 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G3		Not Qualified		44.25 pF		TO-236AB	5.08 %	18 V		e3		260	SILICON	1.65
BB804W	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY					2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		44.75 pF			1.68 %	18 V					SILICON	1.65
BBY39T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		ULTRA HIGH FREQUENCY				.01 uA	2	28 V	SMALL OUTLINE			85 Cel			R-PDSO-G3		Not Qualified		16.5 pF	MATCHED PAIR AVAILABLE	TO-236AB		30 V					SILICON	8
BB901	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				.00000001 uA	1	28 V	SMALL OUTLINE	Varactors	28 V	85 Cel			R-PDSO-G3		Not Qualified		1.055 pF				30 V					SILICON	12
BB804Y235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY				.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V					SILICON	1.65
BBY39212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		ULTRA HIGH FREQUENCY					2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		16.5 pF									SILICON	8
BB804TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE						R-PDSO-G3		Not Qualified											SILICON	1.65
BB804-1	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY				.02 uA	2	16 V	SMALL OUTLINE			100 Cel			R-PDSO-G3		Not Qualified											SILICON	1.65
BB804R212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY				.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V					SILICON	1.65
BB212-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		CYLINDRICAL						O-PBCY-T3		Not Qualified											SILICON	22.5
BB814	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT						2		SMALL OUTLINE	Varactors	18 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		44.75 pF	CAPACITANCE MATCHED TO 3%		3.91 %	18 V		e3			SILICON	2.05
BB914E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	18 V			MATTE TIN	R-PDSO-G3	1	Not Qualified		43.75 pF	1.5% MATCHED SETS AVAILABLE		2.86 %	18 V		e3		260	SILICON	2.28
BB204B-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS							2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V					SILICON	2.55
BB914E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	18 V				R-PDSO-G3		Not Qualified		43.75 pF	1.5% MATCHED SETS AVAILABLE		2.86 %	18 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.28
BB804E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	18 V				R-PDSO-G3		Not Qualified					6.15 %	18 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	1.65
BAW222	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	.5 pF				85 V	4.5 A	e3			SILICON
BB304-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS							2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V					SILICON	1.65
BB204B-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS							2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V					SILICON	2.55
BAW222E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	1.5 pF				85 V	4.5 A	e3			SILICON
BB304A	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		CYLINDRICAL	Varactors	20 V				O-PBCY-T3		Not Qualified		42 pF		TO-92		18 V					SILICON	1.65
BAV222E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	1.5 pF				85 V	4.5 A	e3			SILICON
BB304-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS							2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V					SILICON	1.65
BAV222	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	.5 pF				85 V	4.5 A	e3			SILICON
BB914	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	20 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		43.75 pF	CAPACITANCE MATCHED TO 1.5%		2.86 %	18 V		e3			SILICON	2.28
BAV222E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	1.5 pF				85 V	4.5 A	e3			SILICON

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.