3 Varactor Diodes 585

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Reverse Recovery Time	No. of Elements	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB204G-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS						2	CYLINDRICAL						O-XBCY-T3			Not Qualified					32 V					SILICON	2.55
BB814E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS						2	SMALL OUTLINE	Varactors	20 V				R-PDSO-G3			Not Qualified		44.75 pF			20 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.05
BB304-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS						2	CYLINDRICAL						O-XBCY-T3			Not Qualified					32 V					SILICON	1.65
BB804SF2-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT					2	SMALL OUTLINE	Varactors	18 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G3	1				44.75 pF		6.15 %	18 V		e3		260	SILICON	1.65
BB814E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS						2	SMALL OUTLINE	Varactors	20 V				R-PDSO-G3			Not Qualified		44.75 pF			20 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.05
BB804E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS						2	SMALL OUTLINE	Varactors	18 V			Matte Tin (Sn)	R-PDSO-G3			Not Qualified				6.15 %	18 V		e3			SILICON	1.65
BAW222E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS			.1 A	.715 V	.004 us	2	SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3			Not Qualified	.25 W	1.5 pF			85 V	4.5 A	e3			SILICON
BB204G-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS						2	CYLINDRICAL						O-XBCY-T3			Not Qualified					32 V					SILICON	2.55
BB804-SF2	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS						2	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1		Not Qualified					18 V		e3			SILICON	1.65
BB204G-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS						2	CYLINDRICAL						O-XBCY-T3			Not Qualified					32 V					SILICON	2.55
BB204B-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS						2	CYLINDRICAL						O-XBCY-T3			Not Qualified					32 V					SILICON	2.55
BBY6605WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					1	SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G3	1				68.7 pF	HIGH Q	4 %	12 V		e3			SILICON	5
BBY53-03L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT					1	CHIP CARRIER					MATTE TIN	R-PBCC-N3			Not Qualified		5.3 pF		9.43 %	6 V		e3			SILICON	1.8
BBY52-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	7 V				R-PDSO-G3	1		Not Qualified		1.85 pF	HIGH Q	22.22 %	7 V					SILICON	1.1
BBY52E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE						R-PDSO-G3			Not Qualified		1.85 pF			7 V					SILICON	1.1
BBY55-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	16 V				R-PDSO-G3	1		Not Qualified		15 pF	HIGH Q, LOW INDUCTANCE	6.67 %	16 V					SILICON	2
BBY58-06W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	10 V				R-PDSO-G3	1		Not Qualified		18.3 pF	LOW INDUCTANCE	4.89 %	10 V					SILICON	1.15
BBY66-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	12 V				R-PDSO-G3	1		Not Qualified		68.7 pF	HIGH Q	4 %	12 V					SILICON	5
BBY53E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	6 V				R-PDSO-G3			Not Qualified		5.3 pF			6 V					SILICON	1.8
BBY66-05	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	12 V				R-PDSO-G3	1		Not Qualified		68.7 pF		4 %	12 V					SILICON	5
BBY53E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	6 V			MATTE TIN	R-PDSO-G3	1		Not Qualified		5.3 pF			6 V		e3		260	SILICON	1.8
BBY5805WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3					18.3 pF	LOW INDUCTANCE	4.89 %	10 V					SILICON	1.15
BBY52	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	6 V				R-PDSO-G3			Not Qualified		1.85 pF		22.22 %	7 V					SILICON	1.1
BBY53-03LRH	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT					1	CHIP CARRIER	Varactors	6 V			MATTE TIN	R-XBCC-N3		CATHODE	Not Qualified		5.3 pF		9.43 %	6 V		e3			SILICON	1.8
BBY5705WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE						R-PDSO-G3					17.5 pF	HIGH Q, LOW INDUCTANCE	5.98 %	10 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	3
BBY5806WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT					1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3					18.3 pF	LOW INDUCTANCE	4.89 %	10 V					SILICON	1.15
BBY57-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	10 V			MATTE TIN	R-PDSO-G3	1		Not Qualified		17.5 pF	HIGH Q, LOW INDUCTANCE	5.98 %	10 V		e3			SILICON	3
BBY58-04W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	10 V			TIN LEAD	R-PDSO-G3			Not Qualified		18.3 pF	LOW INDUCTANCE		10 V		e0			SILICON	2.8
BBY53-05W-H6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY				2	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G3	1				5.3 pF		9.43 %	6 V		e3		260	SILICON	1.8
BBY5305WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY				2	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3					5.3 pF		9.43 %	6 V					SILICON	1.8
BBY5806WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT					1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3					18.3 pF	LOW INDUCTANCE	4.89 %	10 V					SILICON	1.15
BBY51	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	6 V				R-PDSO-G3	1		Not Qualified		5.4 pF		6.48 %	7 V					SILICON	1.55
BBY53	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel		R-PDSO-G3	1		Not Qualified		5.3 pF		9.43 %	6 V					SILICON	1.8
BBY52E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE						R-PDSO-G3			Not Qualified		1.85 pF			7 V					SILICON	1.1
BBY51E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-G3	1		Not Qualified		5.4 pF		6.48 %	7 V		e3		260	SILICON	1.55
BBY58-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	10 V				R-PDSO-G3	1		Not Qualified		18.3 pF	LOW INDUCTANCE	4.89 %	10 V					SILICON	1.15
BBY51E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-G3	1		Not Qualified		5.4 pF		6.48 %	7 V		e3		260	SILICON	1.55
BBY5805WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3					18.3 pF	LOW INDUCTANCE	4.89 %	10 V					SILICON	1.15
BBY53-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel		R-PDSO-G3	1		Not Qualified		5.3 pF		9.43 %	6 V					SILICON	1.8
BBY6605WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3					68.7 pF	HIGH Q	4 %	12 V					SILICON	5
BB844	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY				2	SMALL OUTLINE	Varactors	20 V				R-PDSO-G3	1		Not Qualified		43.75 pF	CAPACITANCE MATCHED TO 1.5%	2.86 %	18 V					SILICON	3.2
BBY5305WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY				2	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3	1				5.3 pF		9.43 %	6 V		e3			SILICON	1.8
UZC834BTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT					1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1		Not Qualified	.33 W	47 pF	LOW NOISE	5 %	25 V		e3	40	260	SILICON	5
FMMV2103TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	ABRUPT					1	SMALL OUTLINE						R-PDSO-G3			Not Qualified	.33 W	10 pF	LOW NOISE	10 %	30 V					SILICON	2.6
ZC830TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT					1	SMALL OUTLINE						R-PDSO-G3			Not Qualified	.33 W	10 pF	LOW NOISE	20 %	25 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	4.5
UZC836BTC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT					1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1		Not Qualified	.33 W	100 pF	LOW NOISE	5 %	25 V		e3	40	260	SILICON	5
ZMDC831BTC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT					2	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-G3	1		Not Qualified		15 pF	LOW NOISE	5 %	25 V		e3	30	260	SILICON	4.5
ZC830BTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT					1	SMALL OUTLINE					MATTE TIN	R-PDSO-G3			Not Qualified	.33 W	10 pF	LOW NOISE	5 %	25 V		e3			SILICON	4.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.