3 Varactor Diodes 585

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
933184920235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G3		Not Qualified		16.5 pF					e3			SILICON
BB212-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-PBCY-T3		Not Qualified										SILICON	22.5
BB804-4	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			100 Cel			R-PDSO-G3		Not Qualified										SILICON	1.65
BBY40212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE					Tin (Sn)	R-PDSO-G3	1	Not Qualified							e3			SILICON	5
BB212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		.05 uA	2	10 V	CYLINDRICAL			85 Cel			O-PBCY-T3		Not Qualified		500 pF		TO-92	3.5 %	12 V				SILICON	22.5
BB804-3	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			100 Cel			R-PDSO-G3		Not Qualified										SILICON	1.65
BB804W235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V				SILICON	1.65
BB804W212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V				SILICON	1.65
BBY31-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			85 Cel			R-PDSO-G3		Not Qualified		16.5 pF			11.11 %	30 V				SILICON
BB200T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		70 pF		TO-236AB	6 %	18 V				SILICON	5
BBY31T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			85 Cel		TIN	R-PDSO-G3		Not Qualified		16.5 pF			11.11 %	30 V	e3			SILICON
933815170215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3		Not Qualified		24 pF								SILICON	12
933814570215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		16.5 pF						NOT SPECIFIED	NOT SPECIFIED	SILICON	8
BBY31TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3		Not Qualified										SILICON
BB207	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	Tin (Sn)	R-PDSO-G3	1	Not Qualified		81 pF		TO-236AB	6.17 %		e3	30	260	SILICON	2.6
BBY31,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3		Not Qualified		16.5 pF			11.11 %	30 V	e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
933184920215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G3		Not Qualified		16.5 pF					e3			SILICON
BB804G212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V				SILICON	1.65
934056469215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		70 pF		TO-236AB	6 %	18 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
BB804Y212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V				SILICON	1.65
BBY39TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE						R-PDSO-G3		Not Qualified										SILICON	8
BB204G	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.05 uA	2	30 V	CYLINDRICAL			100 Cel			O-PBCY-T3		Not Qualified		14 pF		TO-92						SILICON	2.5
BB804TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE						R-PDSO-G3		Not Qualified										SILICON	1.65
BBY42T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.00000001 uA	1	28 V	SMALL OUTLINE	Varactors	32 V	85 Cel			R-PDSO-G3		Not Qualified		24 pF		TO-236AB		30 V				SILICON	12
BB804G235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V				SILICON	1.65
BB804-0	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			100 Cel			R-PDSO-G3		Not Qualified										SILICON	1.65
BB804R215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.25 W					18 V				SILICON	1.65
BB207,235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		81 pF		TO-236AB	6.17 %		e3	30	260	SILICON	2.6
BB901215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3		Not Qualified										SILICON	12
BB804	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE	Varactors	18 V	100 Cel			R-PDSO-G3		Not Qualified		44.25 pF		TO-236AB	5.08 %	18 V		40	260	SILICON	1.65
BBY40TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE					Tin (Sn)	R-PDSO-G3	1	Not Qualified							e3			SILICON	8
BBY31TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3		Not Qualified										SILICON
BB804Y	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		43.75 pF			1.71 %	18 V				SILICON	1.65
BB204B-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-PBCY-T3		Not Qualified										SILICON	2.5
BB901T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.00000001 uA	1	28 V	SMALL OUTLINE	Varactors	30 V	85 Cel			R-PDSO-G3		Not Qualified		1.055 pF				30 V				SILICON	12
BBY42235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3		Not Qualified		24 pF								SILICON	12
BBY42TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3		Not Qualified										SILICON	12
934056470215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		95 pF		TO-236AB	6.81 %		e3			SILICON	3.1
BB204G-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		CYLINDRICAL						O-PBCY-T3		Not Qualified										SILICON	2.5
BBY40T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		26 pF				30 V	e3	30	260	SILICON	5
BB804-2	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			100 Cel			R-PDSO-G3		Not Qualified										SILICON	1.65
933505310215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified							e3	30	260	SILICON	5
BBY40TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE					Tin (Sn)	R-PDSO-G3	1	Not Qualified							e3			SILICON	8
BB804-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			100 Cel			R-PDSO-G3		Not Qualified		44.25 pF		TO-236AB	5.08 %	18 V				SILICON	1.65
BBY39,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.01 uA	2	28 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3		Not Qualified		16.5 pF	MATCHED PAIR AVAILABLE	TO-236AB		30 V				SILICON	8
BB804WT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		44.75 pF			1.68 %	18 V				SILICON	1.65
BBY42212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3		Not Qualified		24 pF								SILICON	12
934019540215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		44.75 pF			1.68 %	18 V				SILICON	1.65

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.