3 Varactor Diodes 585

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio	Reference Standard
BB914E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE					TIN	R-PDSO-G3	1	Not Qualified		43.75 pF	1.5% MATCHED SETS AVAILABLE		2.86 %	18 V	e3			SILICON	2.28
BB844E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G3	1			43.75 pF	CAPACITANCE MATCHED TO 1.5%		2.86 %	18 V	e3			SILICON	3.2
KVX2162-23-0	Microchip Technology	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO L BAND	.05 uA	1		SMALL OUTLINE	Varactors	22 V	125 Cel	-55 Cel		R-PDSO-G3		Not Qualified		10 pF	HIGH RELIABILITY		10 %	22 V				SILICON
SMVA1470-004LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY	.02 uA	2	10 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3	1		.25 W	70 pF	LOW NOISE		6 %	10 V			260	SILICON	5	AEC-Q101
BBY40,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		26 pF				30 V	e3	30	260	SILICON	5
KVX2162-23-0/TR	Microchip Technology	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO L BAND	.05 uA	1		SMALL OUTLINE		22 V	125 Cel	-55 Cel		R-PDSO-G3				10 pF	HIGH RELIABILITY		10 %	22 V				SILICON
MA45439-287T	TE Connectivity	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	1500	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN LEAD	R-PDSO-G3		Not Qualified		8.2 pF			10 %	30 V	e0			SILICON	4.5
SMV1235-004LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	750	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	S BAND		2		SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	.25 W	11.5 pF	LOW NOISE		10 %	15 V	e3		260	SILICON	1.6
SMV1213-004LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	12 V	125 Cel	-55 Cel	Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.25 W	22 pF	LOW NOISE			12 V	e3	40	260	SILICON	2
BBY40,235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1			29 pF		TO-236AB	10.34 %	30 V	e3	30	260	SILICON	5
1SV228	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE	Varactors	15 V	125 Cel			R-PDSO-G3		Not Qualified		30.5 pF	CAPACITANCE MATCHED TO 2.5%		6.55 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.1
BB201,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		95 pF		TO-236AB	6.81 %		e3	30	260	SILICON	3.1
SMV1413-004LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	2400	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	S BAND		2		SMALL OUTLINE	Varactors	30 V			Tin (Sn)	R-PDSO-G3	1	Not Qualified	.25 W	7.4 pF	LOW NOISE			30 V	e3	40	260	SILICON	4.2
1SV228(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE			125 Cel			R-PDSO-G3				30.5 pF			6.56 %	15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.1
SMV1212-001	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	12 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.25 W	50 pF	LOW NOISE			12 V	e0	30	245	SILICON	2
SMV1215-001LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	12 V			Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.25 W	9.5 pF				12 V	e3	40	260	SILICON	2
SMV1237-001LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			Tin (Sn)	R-PDSO-G3	1	Not Qualified	.25 W	49.5 pF	LOW NOISE		9.09 %	15 V	e3	40	260	SILICON	1.6
SVC230	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY	.05 uA	2	10 V	SMALL OUTLINE		16 V	125 Cel			R-PDSO-G3				45.25 pF			2.76 %	16 V				SILICON	1.65
MMBV809LT3G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	75	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	5.3 pF	HIGH RELIABILITY	TO-236AB	15.09 %	20 V	e3		260	SILICON	1.8
SVC203CP	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	60	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	16 V	125 Cel			R-PDSO-G3		Not Qualified		62.39 pF			5.51 %	16 V				SILICON	4.6
MC209RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL					TIN LEAD	O-PBCY-T3		Not Qualified	.2 W	29 pF		TO-92	10.34 %	30 V	e0			SILICON	5
MMBV109LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1	Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-236AB	10.34 %	30 V	e3	30	260	SILICON	5
MV104RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3		Not Qualified	.28 W	39.5 pF		TO-92	6.33 %	32 V	e0			SILICON	2.5
MMBV609LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	20 V	125 Cel		TIN	R-PDSO-G3	1	Not Qualified	.225 W	29 pF	HIGH Q	TO-236AB	10.34 %	20 V	e3	30	260	SILICON	1.8
MMBV2108LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	27 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
SVC720	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	16 V	150 Cel			R-PDSO-F3		Not Qualified		24.15 pF			14.28 %	16 V				SILICON	2
MV104RL	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	EUROPEAN PART NUMBER	TO-92	6.33 %	32 V	e0			SILICON	2.5
SVC251SPA	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	R-PSIP-T3		Not Qualified		23 pF				12 V				SILICON	1.7
SVC323	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		L BAND		1		IN-LINE	Varactors	16 V				R-PSIP-T3		Not Qualified		462.8 pF				16 V				SILICON	17.5
MMBV109LT3	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G3	1	Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-236AB	10.34 %	30 V	e0		235	SILICON	5
MMBV2105LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	15 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0	30	235	SILICON	2.5
MMBV2108L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G3		Not Qualified	.225 W	27 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0			SILICON	2.5
MMBV3102LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel		TIN	R-PDSO-G3	1	Not Qualified	.225 W	22 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	11.1 %	30 V	e3	30	260	SILICON	4.5
SVC384T	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		IN-LINE	Varactors	33 V	125 Cel			R-PSIP-T3		Not Qualified					3.35 %	33 V				SILICON	17.5
SVC220	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	16 V				R-PDSO-G3		Not Qualified		45.25 pF			2.76 %	16 V				SILICON	1.65
SVC270	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY	.05 uA	2	10 V	SMALL OUTLINE		16 V	150 Cel			R-PDSO-F3				45.25 pF			2.76 %	16 V				SILICON	1.65
MMBV109L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel		TIN LEAD	R-PDSO-G3		Not Qualified	.2 W	29 pF		TO-236AB	10.34 %	30 V	e0			SILICON	5
MMBV2107L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G3		Not Qualified	.225 W	22 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0			SILICON	2.5
SVC276	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	16 V	125 Cel			R-PDSO-F3		Not Qualified		76.75 pF			3.94 %	14 V				SILICON	3.1
SVC272	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	3	YES	RECTANGULAR	150	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY	.05 uA	2	10 V	SMALL OUTLINE		16 V	125 Cel			R-PDSO-F3				47.365 pF			5.18 %	14 V				SILICON	2.3
MMBV3102LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	22 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	11.11 %	30 V	e0	30	235	SILICON	4.5
MMBV105GLT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	2.15 pF	HIGH RELIABILITY	TO-236AB	30.23 %	30 V	e0	30	235	SILICON	4
SVC346	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL	Varactors	33 V				O-PBCY-T3		Not Qualified		64 pF		TO-92	8 %	33 V				SILICON	17.5
SVC203C	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	60	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY	.05 uA	2	10 V	SMALL OUTLINE		16 V	125 Cel			R-PDSO-G3				62.39 pF			5.75 %	16 V				SILICON	4.6
MMBV432LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	14 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	45.55 pF	HIGH Q, 1% MATCHING GUARANTEED	TO-236AB	5.6 %	14 V	e3	30	260	SILICON	1.5
SVC384S	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		IN-LINE	Varactors	33 V	125 Cel			R-PSIP-T3		Not Qualified					3.31 %	33 V				SILICON	17.5
MMBV2103L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V	150 Cel		TIN LEAD	R-PDSO-G3		Not Qualified	.225 W	10 pF	HIGH RELIABILITY	TO-236AB	10 %	30 V	e0			SILICON	2.5
MMBV105GLT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified	.225 W	2.15 pF	HIGH RELIABILITY	TO-236AB	30.23 %	30 V	e3	30	260	SILICON	4

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.