ROUND Varactor Diodes 351

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
MV2105RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
MV1650	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM			200 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	100 pF		DO-204AA	10 %	20 V	e0		SILICON	2
MV2105RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0		SILICON	2.5
MV1638	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM					TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	33 pF		DO-204AA	10 %	20 V	e0		SILICON	2
1N5695	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	100 pF		DO-7	20 %	45 V	e0		SILICON	3.3
SVC342	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	3	NO	ROUND	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL	Varactors	16 V				O-PBCY-W3		Not Qualified		503 pF		TO-92		16 V			SILICON	19.5
1N5704	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	33 pF		DO-7	20 %	65 V	e0		SILICON	3.2
1N5685	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	550	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	15 pF		DO-7	20 %	45 V	e0		SILICON	3.2
1N4802	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	100 V	LONG FORM	Varactors	100 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	8.2 pF		DO-7	20 %	110 V	e0		SILICON	2.42
1N5710	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	150	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	100 pF		DO-7	20 %	65 V	e0		SILICON	3.2
1N5448	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	22 pF		DO-7	20 %	30 V	e0		SILICON	2.6
1N5455	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	175	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	82 pF		DO-7	20 %	30 V	e0		SILICON	2.7
MV2105G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V	150 Cel		TIN SILVER COPPER	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e1	260	SILICON	2.5
MC209RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL					TIN LEAD	O-PBCY-T3		Not Qualified	.2 W	29 pF		TO-92	10.34 %	30 V	e0		SILICON	5
1N5703	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	27 pF		DO-7	20 %	65 V	e0		SILICON	3.2
MV104RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e0		SILICON	2.5
MV209RL	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10.34 %	30 V	e0		SILICON	5
1N5707	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	225	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	56 pF		DO-7	20 %	65 V	e0		SILICON	3.2
1N5696	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE	ABRUPT		.02 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	6.8 pF		DO-7	20 %	65 V	e0		SILICON	2.7
MV104RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	EUROPEAN PART NUMBER	TO-92	6.33 %	32 V	e0		SILICON	2.5
LV2209RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0		SILICON	2.5
MV2109RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
MV209RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		CYLINDRICAL					TIN LEAD	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-92	10.34 %	30 V	e0	235	SILICON	5
1N5681	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	600	GLASS	SINGLE	ABRUPT		.02 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	6.8 pF		DO-7	20 %	45 V	e0		SILICON	3.1
1N4806	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	90 V	LONG FORM	Varactors	90 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	18 pF		DO-7	20 %	99 V	e0		SILICON	2.36
1N5446	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	18 pF		DO-7	20 %	30 V	e0		SILICON	2.6
LV2209RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	25 V	e0		SILICON	2.5
MV2101RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
MV104RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e0		SILICON	2.5
1N4786	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	25 V	LONG FORM	Varactors	25 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	6.8 pF		DO-7	20 %	28 V	e0		SILICON	2.4
1N4813	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	30 V	LONG FORM	Varactors	15 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	68 pF		DO-7	20 %	33 V	e0		SILICON	2.3
1N5461	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	600	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	6.8 pF		DO-7	20 %	30 V	e0		SILICON	2.7
LV2205ZL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	25 V	e0		SILICON	2.5
MV209RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-92	10.34 %	30 V	e0		SILICON	5
1N5148A	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE				1		LONG FORM			175 Cel			O-LALF-W2	ISOLATED	Not Qualified	.4 W	47 pF		DO-204AA	10 %	60 V			SILICON	3.2
1N4814	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	20 V	LONG FORM	Varactors	20 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	82 pF		DO-7	20 %	22 V	e0		SILICON	2.26
1N5688	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	27 pF		DO-7	20 %	45 V	e0		SILICON	3.3
1N4787	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	25 V	LONG FORM	Varactors	25 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	8.2 pF		DO-7	20 %	28 V	e0		SILICON	2.42
1N5693	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	250	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	68 pF		DO-7	20 %	45 V	e0		SILICON	3.3
1N4790	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	25 V	LONG FORM	Varactors	25 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	15 pF		DO-7	20 %	28 V	e0		SILICON	2.37
1N4794	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	20 V	LONG FORM	Varactors	20 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	33 pF		DO-7	20 %	22 V	e0		SILICON	2.35
1N4815	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	20 V	LONG FORM	Varactors	20 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	100 pF		DO-7	20 %	22 V	e0		SILICON	2.24
1N5682	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	600	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	8.2 pF		DO-7	20 %	45 V	e0		SILICON	3.1
1N5474	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	250	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	68 pF		DO-7	20 %	30 V	e0		SILICON	2.9
1N5450	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	33 pF		DO-7	20 %	30 V	e0		SILICON	2.6
1N5702	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	375	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	22 pF		DO-7	20 %	65 V	e0		SILICON	3.2
MV1634	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM					TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	22 pF		DO-204AA	10 %	20 V	e0		SILICON	2
1N5690	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	39 pF		DO-7	20 %	45 V	e0		SILICON	3.3

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.