ROUND Varactor Diodes 351

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
MV2109RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
1N5440	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE			.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	4.7 pF			20 %	30 V	e0		SILICON	2.4
LV2205RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0		SILICON	2.5
1N5475	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	225	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	82 pF		DO-7	20 %	30 V	e0		SILICON	2.9
SVC321D	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	CYLINDRICAL		16 V	100 Cel			O-PBCY-T2							3 %	16 V			SILICON	15.5
1N5686	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	18 pF		DO-7	20 %	45 V	e0		SILICON	3.2
MV2109RL	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0		SILICON	2.5
1N4800	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	15 V	LONG FORM	Varactors	15 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	100 pF		DO-7	20 %	17 V	e0		SILICON	2.24
MV2109RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0	235	SILICON	2.5
1N5476	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	100 pF		DO-7	20 %	30 V	e0		SILICON	2.9
1N4795	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	20 V	LONG FORM	Varactors	55 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	39 pF		DO-7	20 %	22 V	e0		SILICON	2.34
MV104RLRAG	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		CYLINDRICAL	Varactors	32 V			TIN SILVER COPPER	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e1	260	SILICON	2.5
1N5691	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	47 pF		DO-7	20 %	45 V	e0		SILICON	3.3
MV2101RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
1N5466	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	18 pF		DO-7	20 %	30 V	e0		SILICON	2.9
1N5468	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	22 pF		DO-7	20 %	30 V	e0		SILICON	2.9
BBY34D	STMicroelectronics	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	400	UNSPECIFIED	SINGLE	HYPERABRUPT			1		MICROWAVE			175 Cel			O-XEMW-N2		Not Qualified						22 V			SILICON	2.7
BB909A116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V			SILICON	12
BB909A-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE			32 V			SILICON	12
BB809-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE			30 V			SILICON	8
BB909B133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V			SILICON	12
BB909B153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V			SILICON	12
BB204G-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-PBCY-T3		Not Qualified									SILICON	2.5
BB909A143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V			SILICON	12
BB215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LELF-R2	ISOLATED	Not Qualified		16.5 pF	3% MATCHED SETS AVAILABLE						SILICON	7.6
BB909A	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified		23 pF	MATCHED TO 2.5%	DO-34					SILICON	12
BB417133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified				DO-34		30 V			SILICON	2
BB130	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND		PLASTIC/EPOXY	SINGLE			.05 uA	1	30 V	CYLINDRICAL			85 Cel			O-PBCY-T2		Not Qualified		450 pF	3% MATCHED SETS ARE AVAILABLE, 3% MATCHED SET OF TWO DIODES	TO-92		32 V			SILICON	23
BB910143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V			SILICON	14
BB204B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY	.05 uA	2	30 V	CYLINDRICAL			100 Cel			O-PBCY-T3		Not Qualified		14 pF		TO-92					SILICON	2.5
BB910-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V			SILICON	14
BB212-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-PBCY-T3		Not Qualified									SILICON	22.5
BB909A-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE			32 V			SILICON	12
BB212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.05 uA	2	10 V	CYLINDRICAL			85 Cel			O-PBCY-T3		Not Qualified		500 pF		TO-92	3.5 %	12 V			SILICON	22.5
BB911-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V			SILICON	21
BB909A153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V			SILICON	12
BB809116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V			SILICON	8
BB809136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V			SILICON	8
BB249TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM						O-LELF-R2	ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE						SILICON	8
BB909B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified		25 pF	MATCHED TO 2.5%	DO-34					SILICON	12
BB909B-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE			32 V			SILICON	12
BB911/A113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V			SILICON	23.3
BB417153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified				DO-34		30 V			SILICON	2
BB909A133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V			SILICON	12
BB417	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified				DO-34					SILICON	2
BB240TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM						O-LELF-R2	ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE						SILICON	14
BB911-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V			SILICON	21
BB405B143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V			SILICON	7.6

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.