ROUND Varactor Diodes 351

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	Diode Element Material	Minimum Diode Capacitance Ratio
BB215TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		ULTRA HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE				SILICON	7.6
BB809133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	8
BB219TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE				SILICON	12
BB911/A116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	23.3
BB809113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V	SILICON	8
BB119143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			.05 uA	1	15 V	LONG FORM			150 Cel		O-LALF-W2	ISOLATED	Not Qualified				DO-35		15 V	SILICON	1.3
BB910133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	14
BB119153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			.05 uA	1	15 V	LONG FORM			150 Cel		O-LALF-W2	ISOLATED	Not Qualified				DO-35		15 V	SILICON	1.3
BB240	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LELF-R2	ISOLATED	Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V	SILICON	14
BB219TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE				SILICON	12
BB119113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			.05 uA	1	15 V	LONG FORM			150 Cel		O-LALF-W2	ISOLATED	Not Qualified				DO-35		15 V	SILICON	1.3
BB909A113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	12
BB417-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			.1 uA	1	20 V	LONG FORM			100 Cel		O-LALF-W2	ISOLATED	Not Qualified							SILICON	2
BB119-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			2 uA	1	15 V	LONG FORM			200 Cel		O-LALF-W2	ISOLATED	Not Qualified							SILICON	1.3
BB119	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM					O-LALF-W2	ISOLATED	Not Qualified		17 pF		DO-35			SILICON	1.3
BB911/AT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM	Varactors	30 V			O-LALF-W2	ISOLATED	Not Qualified		60 pF	MATCHED TO 2.5%	DO-34			SILICON	23.3
BB241	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LELF-R2	ISOLATED	Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V	SILICON	21
BB119116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			.05 uA	1	15 V	LONG FORM			150 Cel		O-LALF-W2	ISOLATED	Not Qualified				DO-35		15 V	SILICON	1.3
BB910153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	14
BB910113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	14
BB809	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		39 pF	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES	DO-34		30 V	SILICON	8
BB909B143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V	SILICON	12
BB212-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-PBCY-T3		Not Qualified							SILICON	22.5
BBY34C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	400	CERAMIC, METAL-SEALED COFIRED	SINGLE	HYPERABRUPT			1		MICROWAVE					O-CEMW-N2		Not Qualified		3.4 pF				22 V	SILICON	4.3
BB204B-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3		Not Qualified						32 V	SILICON	2.55
BBY35F	Infineon Technologies	VARIABLE CAPACITANCE DIODE	AXIAL	GULL WING	2	YES	ROUND	250	UNSPECIFIED	SINGLE	HYPERABRUPT			1		MICROWAVE			175 Cel		O-XAMW-G2		Not Qualified						22 V	SILICON	3.5
BB304-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3		Not Qualified						32 V	SILICON	1.65
BB204B-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3		Not Qualified						32 V	SILICON	2.55
BBY33BB2	Infineon Technologies	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	4000	UNSPECIFIED	SINGLE	ABRUPT			1		MICROWAVE	Varactors	25 V			O-XEMW-N2		Not Qualified		1.2 pF				25 V	SILICON	2.5
BBY33DA2	Infineon Technologies	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	3500	UNSPECIFIED	SINGLE	ABRUPT			1		MICROWAVE	Varactors	30 V			O-XEMW-N2		Not Qualified		2 pF				30 V	SILICON	3
BB304A	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL	Varactors	20 V			O-PBCY-T3		Not Qualified		42 pF		TO-92		18 V	SILICON	1.65
BB304-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3		Not Qualified						32 V	SILICON	1.65
BB204G-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3		Not Qualified						32 V	SILICON	2.55
BB304-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3		Not Qualified						32 V	SILICON	1.65
BB204G-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3		Not Qualified						32 V	SILICON	2.55
BB204G-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3		Not Qualified						32 V	SILICON	2.55
BB204B-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3		Not Qualified						32 V	SILICON	2.55
ZC826	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	100 pF			20 %	25 V	SILICON	5
ZC821A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	15 pF			10 %	25 V	SILICON	5
ZC821	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	15 pF			20 %	25 V	SILICON	5
ZC822A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	22 pF			10 %	25 V	SILICON	5
ZC825A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	68 pF			10 %	25 V	SILICON	5
ZC825	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	68 pF			20 %	25 V	SILICON	5
ZC821B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	15 pF			5 %	25 V	SILICON	5
ZC820B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	10 pF			5 %	25 V	SILICON	5
ZC826A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	100 pF			10 %	25 V	SILICON	5
ZC824A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	47 pF			10 %	25 V	SILICON	5
ZC820A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL					O-PBCY-W2		Not Qualified	.3 W	10 pF			10 %	25 V	SILICON	5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.