ROUND Varactor Diodes 351

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
1N5439	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE			.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	3.3 pF			20 %	30 V	e0		SILICON	2.3
MV104RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		CYLINDRICAL	Varactors	32 V			TIN LEAD	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e0	235	SILICON	2.5
1N4811	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	50 V	LONG FORM	Varactors	50 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	47 pF		DO-7	20 %	55 V	e0		SILICON	2.33
1N4788	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	25 V	LONG FORM	Varactors	25 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	10 pF		DO-7	20 %	28 V	e0		SILICON	2.34
1N5689	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	33 pF		DO-7	20 %	45 V	e0		SILICON	3.3
MV2111	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	150	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL	Varactors	30 V	150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	47 pF		TO-92	10 %	30 V	e0		SILICON	2.5
1N4797	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	15 V	LONG FORM	Varactors	15 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	56 pF		DO-7	20 %	17 V	e0		SILICON	2.32
1N5698	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	10 pF		DO-7	20 %	65 V	e0		SILICON	2.8
MV2104	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL	Varactors	30 V	150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	12 pF		TO-92	10 %	30 V	e0		SILICON	2.5
MV2109G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e1	260	SILICON	2.5
1N5471	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	39 pF		DO-7	20 %	30 V	e0		SILICON	2.9
MV104ZL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	EUROPEAN PART NUMBER	TO-92	6.33 %	32 V	e0		SILICON	2.5
1N5453	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	56 pF		DO-7	20 %	30 V	e0		SILICON	2.6
1N5687	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	22 pF		DO-7	20 %	45 V	e0		SILICON	3.3
MV209RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-92	10.34 %	30 V	e0		SILICON	5
1N5472	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	47 pF		DO-7	20 %	30 V	e0		SILICON	2.9
MV2101RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
1N5709	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	150	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	82 pF		DO-7	20 %	65 V	e0		SILICON	3.2
1N4801	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	100 V	LONG FORM	Varactors	100 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	6.8 pF		DO-7	20 %	110 V	e0		SILICON	2.4
MV2105RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
1N5701	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	375	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	18 pF		DO-7	20 %	65 V	e0		SILICON	2.8
LV2209	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	25 V	e0	235	SILICON	2.5
MV2105	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e0	235	SILICON	2.5
MV104	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		CYLINDRICAL	Varactors	32 V			TIN LEAD	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e0	235	SILICON	2.5
LV2205RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0		SILICON	2.5
MV2101G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e1	260	SILICON	2.5
MV1404	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	HYPERABRUPT			1		LONG FORM			125 Cel			O-LALF-W2	ISOLATED	Not Qualified	.4 W	120 pF		DO-204AA	20 %	12 V			SILICON	10
1N5705	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	325	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	39 pF		DO-7	20 %	65 V	e0		SILICON	3.2
SVC321B	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	CYLINDRICAL		16 V	100 Cel			O-PBCY-T2							3 %	16 V			SILICON	15.5
MV2101ZL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0		SILICON	2.5
1N5451	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	300	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	39 pF		DO-7	20 %	30 V	e0		SILICON	2.6
MV2109RLRPG	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e1	260	SILICON	2.5
1N5444	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	12 pF		DO-7	20 %	30 V	e0		SILICON	2.6
1N4791	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	20 V	LONG FORM	Varactors	20 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	18 pF		DO-7	20 %	22 V	e0		SILICON	2.36
1N5464	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	550	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	12 pF		DO-7	20 %	30 V	e0		SILICON	2.8
1N5456A	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	175	GLASS	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified	.4 W	100 pF		DO-204AA	10 %	30 V			SILICON	2.7
1N4807	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	90 V	LONG FORM	Varactors	90 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	22 pF		DO-7	20 %	99 V	e0		SILICON	2.35
LV2205RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0		SILICON	2.5
MV2105RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		SILICON	2.5
SVC344	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	3	NO	ROUND	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL	Varactors	30 V				O-PBCY-W3		Not Qualified		430 pF		TO-92	2 %	30 V			SILICON	15
1N4804	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	100 V	LONG FORM	Varactors	100 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	12 pF		DO-7	20 %	110 V	e0		SILICON	2.35
MV1630	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM					TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	18 pF		DO-204AA	10 %	20 V	e0		SILICON	2
MV209RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL					TIN LEAD	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-92	10.34 %	30 V	e0		SILICON	5
1N4789	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	25 V	LONG FORM	Varactors	25 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.5 W	12 pF		DO-7	20 %	28 V	e0		SILICON	2.35
1N5462	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	600	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	8.2 pF		DO-7	20 %	30 V	e0		SILICON	2.8
MV209ZL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10.34 %	30 V	e0		SILICON	5
MV209RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10.34 %	30 V	e0		SILICON	5
1N5442	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2	ISOLATED	Not Qualified	.4 W	8.2 pF		DO-7	20 %	30 V	e0		SILICON	2.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.