BOTTOM Varactor Diodes 175

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

LV2205RL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

25 V

e0

SILICON

2.5

MV2109ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

30 V

e0

SILICON

2.5

MV104G

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

2

CYLINDRICAL

Varactors

32 V

TIN SILVER COPPER

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

1% MATCHING GUARANTEED

TO-92

6.33 %

32 V

e1

260

SILICON

2.5

MV2109RLRAG

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e1

260

SILICON

2.5

MV2105RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

MV2105RL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

30 V

e0

SILICON

2.5

SVC342

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

3

NO

ROUND

200

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

Varactors

16 V

O-PBCY-W3

Not Qualified

503 pF

TO-92

16 V

SILICON

19.5

MV2105G

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

150 Cel

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH Q, HIGH RELIABILITY

TO-92

10 %

30 V

e1

260

SILICON

2.5

MC209RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

TIN LEAD

O-PBCY-T3

Not Qualified

.2 W

29 pF

TO-92

10.34 %

30 V

e0

SILICON

5

ESVD301

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

X BAND

1

CHIP CARRIER

Varactors

30 V

150 Cel

R-XBCC-N2

Not Qualified

.2 W

2.6 pF

SILICON

17

MV104RLRE

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

1% MATCHING GUARANTEED

TO-92

6.33 %

32 V

e0

SILICON

2.5

MV209RL

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10.34 %

30 V

e0

SILICON

5

MV104RL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

EUROPEAN PART NUMBER

TO-92

6.33 %

32 V

e0

SILICON

2.5

LV2209RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

25 V

e0

SILICON

2.5

MV2109RLRE

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

MV209RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

CYLINDRICAL

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-92

10.34 %

30 V

e0

235

SILICON

5

LV2209RL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

25 V

e0

SILICON

2.5

MV2101RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

MV104RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

1% MATCHING GUARANTEED

TO-92

6.33 %

32 V

e0

SILICON

2.5

LV2205ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

25 V

e0

SILICON

2.5

MV209RLRE

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-92

10.34 %

30 V

e0

SILICON

5

MV104RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

2

CYLINDRICAL

Varactors

32 V

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

1% MATCHING GUARANTEED

TO-92

6.33 %

32 V

e0

235

SILICON

2.5

MV2111

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

150

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

Varactors

30 V

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

47 pF

TO-92

10 %

30 V

e0

SILICON

2.5

MV2104

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

Varactors

30 V

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

12 pF

TO-92

10 %

30 V

e0

SILICON

2.5

MV2109G

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH Q, HIGH RELIABILITY

TO-92

10 %

30 V

e1

260

SILICON

2.5

MV104ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

EUROPEAN PART NUMBER

TO-92

6.33 %

32 V

e0

SILICON

2.5

MV209RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-92

10.34 %

30 V

e0

SILICON

5

MV2101RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

MV2105RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

LV2209

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

Varactors

30 V

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH Q, HIGH RELIABILITY

TO-92

10 %

25 V

e0

235

SILICON

2.5

MV2105

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH Q, HIGH RELIABILITY

TO-92

10 %

30 V

e0

235

SILICON

2.5

MV104

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

2

CYLINDRICAL

Varactors

32 V

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

1% MATCHING GUARANTEED

TO-92

6.33 %

32 V

e0

235

SILICON

2.5

LV2205RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

25 V

e0

SILICON

2.5

MV2101G

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH Q, HIGH RELIABILITY

TO-92

10 %

30 V

e1

260

SILICON

2.5

SVC321B

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

CYLINDRICAL

16 V

100 Cel

O-PBCY-T2

3 %

16 V

SILICON

15.5

MV2101ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

30 V

e0

SILICON

2.5

MV2109RLRPG

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e1

260

SILICON

2.5

LV2205RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

25 V

e0

SILICON

2.5

MV2105RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

SVC344

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

3

NO

ROUND

200

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

Varactors

30 V

O-PBCY-W3

Not Qualified

430 pF

TO-92

2 %

30 V

SILICON

15

MV209RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-92

10.34 %

30 V

e0

SILICON

5

MV209ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10.34 %

30 V

e0

SILICON

5

MV209RL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10.34 %

30 V

e0

SILICON

5

MV2109RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

LV2205RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

25 V

e0

SILICON

2.5

SVC321D

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

CYLINDRICAL

16 V

100 Cel

O-PBCY-T2

3 %

16 V

SILICON

15.5

MV2109RL

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

30 V

e0

SILICON

2.5

MV2109RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

235

SILICON

2.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.