BOTTOM Varactor Diodes 175

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Diode Cap Tolerance	Minimum Breakdown Voltage	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
ZC825	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	68 pF	20 %	25 V			SILICON	5
ZC821B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	15 pF	5 %	25 V			SILICON	5
ZC820B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	10 pF	5 %	25 V			SILICON	5
ZC826A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	100 pF	10 %	25 V			SILICON	5
ZC824A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	47 pF	10 %	25 V			SILICON	5
ZC820A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	10 pF	10 %	25 V			SILICON	5
ZC823	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	33 pF	20 %	25 V			SILICON	5
ZC820	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	10 pF	20 %	25 V			SILICON	5
ZC823A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	33 pF	10 %	25 V			SILICON	5
ZC823B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	33 pF	5 %	25 V			SILICON	5
ZC824B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	47 pF	5 %	25 V			SILICON	5
ZC824	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	47 pF	20 %	25 V			SILICON	5
ZC822	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	22 pF	20 %	25 V			SILICON	5
ZC825B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	68 pF	5 %	25 V			SILICON	5
ZC822B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	22 pF	5 %	25 V			SILICON	5
ZC826B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL				O-PBCY-W2		Not Qualified	.3 W	100 pF	5 %	25 V			SILICON	5
JDV2S38SC	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER			150 Cel	R-XBCC-N2				7.37 pF	5.02 %	10 V			SILICON	2.38
JDV2S27SC	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel	R-XBCC-N2		Not Qualified			3.03 %		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.81
JDV3S28CT	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER			150 Cel	R-XBCC-N3	CATHODE	Not Qualified		10.515 pF	3 %	10 V			SILICON	2.09
JDV3S25CT	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel	R-XBCC-N3		Not Qualified			3.19 %				SILICON	2.77
JDV2S26SC	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel	R-CBCC-N2		Not Qualified		15.81 pF	3.04 %		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.83
JDV3S26CT	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel	R-CBCC-N3	CATHODE	Not Qualified		15.8 pF	3.03 %				SILICON	2.82
JDV2S29SC	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel	R-XBCC-N2		Not Qualified			3.93 %		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.73
JDV2S25SC	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel	R-XBCC-N2		Not Qualified			3.13 %		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.81
JDV3S27CT	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel	R-XBCC-N3	CATHODE	Not Qualified			3.01 %				SILICON	2.79
JDV3S29CT	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel	R-CBCC-N3	CATHODE	Not Qualified		3.73 pF	3.75 %				SILICON	2.73
JDV2S31SC	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel	R-XBCC-N2		Not Qualified			4.08 %		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.15
RKV653KP	Renesas Electronics	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		CHIP CARRIER	Varactors	10 V	125 Cel	R-PBCC-N2		Not Qualified		2.75 pF	5.45 %		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.4
RKV605KP	Renesas Electronics	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		CHIP CARRIER	Varactors	10 V	125 Cel	R-PBCC-N2		Not Qualified		19.25 pF	3.9 %		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.02
RKV603KP#R0	Renesas Electronics	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY	.01 uA	1	10 V	CHIP CARRIER		15 V	125 Cel	R-XBCC-N2				7.65 pF	3.53 %	15 V			SILICON	2.1
RKV650KP#R0	Renesas Electronics	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY	.01 uA	1	10 V	CHIP CARRIER		15 V	125 Cel	R-XBCC-N2				7.5 pF	4 %	15 V			SILICON	3.25

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.