BOTTOM Varactor Diodes 175

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
MV104RLRAG	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		CYLINDRICAL	Varactors	32 V			TIN SILVER COPPER	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e1		260	SILICON	2.5
MV2101RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0			SILICON	2.5
BB181LX	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CHIP CARRIER			125 Cel	-55 Cel	TIN	R-PBCC-N2		Not Qualified		12.5 pF			36 %	32 V	e3			SILICON	12
BB204G-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-PBCY-T3		Not Qualified										SILICON	2.5
BB130	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND		PLASTIC/EPOXY	SINGLE			.05 uA	1	30 V	CYLINDRICAL			85 Cel			O-PBCY-T2		Not Qualified		450 pF	3% MATCHED SETS ARE AVAILABLE, 3% MATCHED SET OF TWO DIODES	TO-92		32 V				SILICON	23
BB204B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY	.05 uA	2	30 V	CYLINDRICAL			100 Cel			O-PBCY-T3		Not Qualified		14 pF		TO-92						SILICON	2.5
BB212-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-PBCY-T3		Not Qualified										SILICON	22.5
BB187LX,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		CHIP CARRIER			125 Cel	-55 Cel		R-PBCC-N2				31.75 pF	2% MATCHED SETS OF 5 DIODES ARE AVAILABLE		7.71 %	32 V				SILICON	11
BB212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.05 uA	2	10 V	CYLINDRICAL			85 Cel			O-PBCY-T3		Not Qualified		500 pF		TO-92	3.5 %	12 V				SILICON	22.5
BB204G	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY	.05 uA	2	30 V	CYLINDRICAL			100 Cel			O-PBCY-T3		Not Qualified		14 pF		TO-92						SILICON	2.5
BB112	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND		PLASTIC/EPOXY	SINGLE			.05 uA	1	12 V	CYLINDRICAL			85 Cel			O-PBCY-T2		Not Qualified		440 pF	3% MATCHED SETS ARE AVAILABLE ,3% MATCHED SET OF THREE DIODES	TO-92						SILICON
BB204B-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-PBCY-T3		Not Qualified										SILICON	2.5
BB204G-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-PBCY-T3		Not Qualified										SILICON	2.5
BB202LX	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		CHIP CARRIER			85 Cel	-55 Cel		R-PBCC-N2		Not Qualified		30.85 pF			8.59 %					SILICON	2.5
BB187LX	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CHIP CARRIER			125 Cel	-55 Cel	TIN	R-PBCC-N2		Not Qualified		31.75 pF	2% MATCHED SETS OF 5 DIODES ARE AVAILABLE		7.71 %	32 V	e3			SILICON	11
BB204B-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-PBCY-T3		Not Qualified										SILICON	2.5
BB202LX,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		CHIP CARRIER	Varactors	6 V	85 Cel	-55 Cel	TIN	R-PBCC-N2		Not Qualified		30.85 pF			8.59 %		e3			SILICON	2.5
BB212-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-PBCY-T3		Not Qualified										SILICON	22.5
BB179BLX	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors		125 Cel	-55 Cel	TIN	R-PBCC-N2		Not Qualified		2.1 pF	CAPACITANCE MATCHED TO 2%		8.43 %	32 V	e3			SILICON	8.45
BB178LX	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CHIP CARRIER	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PBCC-N2		Not Qualified		38.5 pF			10 %		e3			SILICON	13.5
BB178LX,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CHIP CARRIER	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PBCC-N2		Not Qualified		38.5 pF			10 %		e3			SILICON	13.5
BB204B-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V				SILICON	2.55
BB304-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V				SILICON	1.65
BB204B-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V				SILICON	2.55
BB304A	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL	Varactors	20 V				O-PBCY-T3		Not Qualified		42 pF		TO-92		18 V				SILICON	1.65
BB304-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V				SILICON	1.65
BB204G-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V				SILICON	2.55
BB304-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V				SILICON	1.65
BB204G-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V				SILICON	2.55
BB204G-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V				SILICON	2.55
BB204B-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V				SILICON	2.55
BBY53-03L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CHIP CARRIER					MATTE TIN	R-PBCC-N3		Not Qualified		5.3 pF			9.43 %	6 V	e3			SILICON	1.8
BBY51-02LE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	7 V			MATTE TIN	R-XBCC-N2		Not Qualified		5.4 pF			6.48 %	7 V	e3		260	SILICON	1.55
BBY53-02L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	6 V	125 Cel	-55 Cel		R-XBCC-N2		Not Qualified		5.3 pF			9.43 %	6 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.8
BBY52-02L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	7 V				R-XBCC-N2		Not Qualified		1.85 pF			22.22 %	7 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.1
BBY5202LE6816XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER			150 Cel	-55 Cel		R-XBCC-N2				1.85 pF			22.22 %	7 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.1
BBY53-03LRH	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	6 V			MATTE TIN	R-XBCC-N3	CATHODE	Not Qualified		5.3 pF			9.43 %	6 V	e3			SILICON	1.8
BBY58-07L4	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR		UNSPECIFIED	SEPARATE, 2 ELEMENTS	HYPERABRUPT		.1 uA	2	8 V	CHIP CARRIER	Other Diodes	10 V	150 Cel	-55 Cel	TIN LEAD	R-XBCC-N4		Not Qualified		18.3 pF			4.89 %	10 V	e0			SILICON	1.15
BBY5202LE6327XTMA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER			150 Cel	-55 Cel		R-XBCC-N2				1.85 pF			22.22 %	7 V				SILICON	1.1
BBY57-02L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	10 V			MATTE TIN	R-PBCC-N2		Not Qualified		17.5 pF			5.98 %	10 V	e3			SILICON	3
BBY5302LE6327XTMA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		CHIP CARRIER			125 Cel	-55 Cel		R-XBCC-N2				5.3 pF			9.43 %	6 V				SILICON	1.8
BBY58-02L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	10 V			MATTE TIN	R-XBCC-N2		Not Qualified		18.3 pF			4.89 %	10 V	e3			SILICON	1.15
BBY51-02L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	7 V			MATTE TIN	R-XBCC-N2		Not Qualified		5.4 pF			6.48 %	7 V	e3			SILICON	1.55
ZC826	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	100 pF			20 %	25 V				SILICON	5
ZC821A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	15 pF			10 %	25 V				SILICON	5
ZC821	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	15 pF			20 %	25 V				SILICON	5
ZC822A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	22 pF			10 %	25 V				SILICON	5
ZC825A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	68 pF			10 %	25 V				SILICON	5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.