BOTTOM Varactor Diodes 175
| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Config | Variable Capacitance Diode Classification | Frequency Band | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Reverse Recovery Time | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | JEDEC-95 Code | Diode Cap Tolerance | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
S BAND |
1 |
CHIP CARRIER |
Varactors |
15 V |
175 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
Not Qualified |
.25 W |
17 pF |
LOW NOISE |
8.82 % |
15 V |
260 |
SILICON |
1.6 |
||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
HYPERABRUPT |
S BAND |
1 |
CHIP CARRIER |
Varactors |
12 V |
175 Cel |
-55 Cel |
R-XBCC-N2 |
1 |
Not Qualified |
19 pF |
16 V |
260 |
SILICON |
2 |
|||||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
CHIP CARRIER |
R-PBCC-N2 |
1 |
Not Qualified |
260 |
SILICON |
||||||||||||||||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
ULTRA HIGH FREQUENCY |
.02 uA |
1 |
19 V |
CHIP CARRIER |
20 V |
175 Cel |
-55 Cel |
R-PBCC-N2 |
.25 W |
4.65 pF |
9.68 % |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
2.2 |
|||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
S BAND |
1 |
CHIP CARRIER |
Varactors |
15 V |
175 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.75 W |
1.58 pF |
LOW NOISE |
9.21 % |
15 V |
260 |
SILICON |
1.45 |
|||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
350 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
.02 uA |
1 |
12 V |
CHIP CARRIER |
15 V |
125 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.25 W |
53 pF |
15 V |
260 |
SILICON |
11 |
||||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
S BAND |
1 |
CHIP CARRIER |
Varactors |
15 V |
175 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
Not Qualified |
.75 W |
2.6 pF |
LOW NOISE |
10 % |
15 V |
260 |
SILICON |
1.5 |
||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
500 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
S BAND |
.05 uA |
1 |
17.6 V |
CHIP CARRIER |
22 V |
175 Cel |
-55 Cel |
R-PBCC-N2 |
.75 W |
1.36 pF |
12.92 % |
22 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
500 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
S BAND |
.05 uA |
1 |
17.6 V |
CHIP CARRIER |
22 V |
175 Cel |
-55 Cel |
R-PBCC-N2 |
.75 W |
.86 pF |
14.62 % |
22 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
ULTRA HIGH FREQUENCY |
.02 uA |
1 |
26 V |
CHIP CARRIER |
125 Cel |
-55 Cel |
R-PBCC-N2 |
.25 W |
13.8 pF |
8.09 % |
28 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
17.7 |
||||||||||||||||
|
Motorola |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.1 uA |
1 |
25 V |
CYLINDRICAL |
125 Cel |
TIN LEAD |
O-PBCY-W2 |
Not Qualified |
.28 W |
18 pF |
10 % |
30 V |
e0 |
SILICON |
2.5 |
|||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
100 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
Varactors |
30 V |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
100 pF |
TO-92 |
10 % |
30 V |
e0 |
SILICON |
2.6 |
||||||||||||||||||
|
Motorola |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
150 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
.1 uA |
1 |
15 V |
CYLINDRICAL |
125 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
500 pF |
3% MATCHED SETS AVAILABLE |
TO-226AC |
18 V |
e0 |
SILICON |
15 |
|||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
400 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
S BAND |
.05 uA |
1 |
17.6 V |
CHIP CARRIER |
22 V |
175 Cel |
-55 Cel |
R-PBCC-N2 |
.75 W |
4.86 pF |
10.81 % |
22 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||
|
Motorola |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
150 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
.1 uA |
1 |
9 V |
CYLINDRICAL |
Varactors |
15 V |
125 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
460 pF |
3% MATCHED SETS AVAILABLE |
TO-226AC |
15 V |
e0 |
SILICON |
12 |
|||||||||||||
|
Motorola |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
150 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
.1 uA |
1 |
25 V |
CYLINDRICAL |
Varactors |
28 V |
125 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
500 pF |
3% MATCHED SETS AVAILABLE |
TO-226AC |
28 V |
e0 |
SILICON |
15 |
|||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
HYPERABRUPT |
S BAND |
1 |
CHIP CARRIER |
Varactors |
15 V |
175 Cel |
-55 Cel |
R-XBCC-N2 |
1 |
.75 W |
6.5 pF |
12.07 % |
15 V |
260 |
SILICON |
1.6 |
||||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
350 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
.02 uA |
1 |
12 V |
CHIP CARRIER |
15 V |
125 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.25 W |
64 pF |
15 V |
260 |
SILICON |
11 |
||||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
ABRUPT |
S BAND |
1 |
CHIP CARRIER |
175 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.75 W |
1.305 pF |
11.11 % |
30 V |
260 |
SILICON |
3.8 |
||||||||||||||||||
|
|
Skyworks Solutions |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
400 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
S BAND |
.05 uA |
1 |
17.6 V |
CHIP CARRIER |
22 V |
175 Cel |
-55 Cel |
R-PBCC-N2 |
.75 W |
1.86 pF |
12.13 % |
22 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
.1 uA |
1 |
9 V |
CYLINDRICAL |
16 V |
100 Cel |
O-PBCY-T2 |
3 % |
16 V |
SILICON |
15.5 |
||||||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
33 pF |
HIGH RELIABILITY |
TO-92 |
10 % |
25 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
ABRUPT |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
1 |
CYLINDRICAL |
Varactors |
30 V |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
33 pF |
HIGH RELIABILITY |
TO-92 |
10 % |
30 V |
e0 |
235 |
SILICON |
2.5 |
||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 |
CYLINDRICAL |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.2 W |
29 pF |
TO-92 |
10.34 % |
30 V |
e0 |
SILICON |
5 |
|||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
400 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
15 pF |
HIGH RELIABILITY, EUROPEAN PART NUMBER |
TO-92 |
10 % |
30 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
450 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
6.8 pF |
HIGH RELIABILITY, EUROPEAN PART NUMBER |
TO-92 |
10 % |
30 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
33 pF |
HIGH RELIABILITY, EUROPEAN PART NUMBER |
TO-92 |
10 % |
25 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
100 |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
2 |
CYLINDRICAL |
125 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.28 W |
39.5 pF |
TO-92 |
6.33 % |
32 V |
e0 |
SILICON |
2.5 |
|||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
450 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
6.8 pF |
HIGH RELIABILITY, EUROPEAN PART NUMBER |
TO-92 |
10 % |
30 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
33 pF |
HIGH RELIABILITY |
TO-92 |
10 % |
25 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
33 pF |
HIGH RELIABILITY |
TO-92 |
10 % |
25 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
ABRUPT |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
1 |
CYLINDRICAL |
Varactors |
30 V |
Tin/Lead (Sn/Pb) |
O-PBCY-T2 |
Not Qualified |
.28 W |
33 pF |
HIGH Q, HIGH RELIABILITY |
TO-92 |
10 % |
30 V |
e0 |
30 |
235 |
SILICON |
2.5 |
|||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
450 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
6.8 pF |
HIGH RELIABILITY |
TO-92 |
10 % |
30 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
100 |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
2 |
CYLINDRICAL |
125 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.28 W |
39.5 pF |
EUROPEAN PART NUMBER |
TO-92 |
6.33 % |
32 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
400 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
15 pF |
HIGH RELIABILITY, EUROPEAN PART NUMBER |
TO-92 |
10 % |
30 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
400 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
15 pF |
HIGH RELIABILITY |
TO-92 |
10 % |
25 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
.1 uA |
1 |
9 V |
CYLINDRICAL |
16 V |
100 Cel |
O-PBCY-T2 |
3 % |
16 V |
SILICON |
15.5 |
||||||||||||||||||||||
|
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
VERY HIGH FREQUENCY |
1 |
CYLINDRICAL |
Varactors |
30 V |
TIN SILVER COPPER |
O-PBCY-T2 |
Not Qualified |
.2 W |
29 pF |
HIGH RELIABILITY |
TO-226AC |
10.34 % |
30 V |
e1 |
260 |
SILICON |
5 |
|||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
400 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
Varactors |
30 V |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
15 pF |
HIGH RELIABILITY |
TO-92 |
10 % |
25 V |
e0 |
SILICON |
2.5 |
|||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
HYPERABRUPT |
VERY HIGH FREQUENCY |
1 |
CYLINDRICAL |
Varactors |
30 V |
Tin/Lead (Sn80Pb20) |
O-PBCY-T2 |
Not Qualified |
.2 W |
29 pF |
HIGH RELIABILITY |
TO-226AC |
10.34 % |
30 V |
e0 |
30 |
235 |
SILICON |
5 |
|||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
2 |
CYLINDRICAL |
Varactors |
33 V |
O-PBCY-T3 |
Not Qualified |
64 pF |
TO-92 |
8 % |
33 V |
SILICON |
17.5 |
|||||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
400 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
15 pF |
HIGH RELIABILITY, EUROPEAN PART NUMBER |
TO-92 |
10 % |
25 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
300 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
Varactors |
30 V |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
27 pF |
TO-92 |
10 % |
30 V |
e0 |
SILICON |
2.5 |
|||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
33 pF |
HIGH RELIABILITY, EUROPEAN PART NUMBER |
TO-92 |
10 % |
25 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 |
CYLINDRICAL |
Varactors |
20 V |
125 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.225 W |
29 pF |
HIGH RELIABILITY |
TO-92 |
10.34 % |
20 V |
e0 |
SILICON |
1.5 |
|||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
400 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
15 pF |
HIGH RELIABILITY |
TO-92 |
10 % |
30 V |
e0 |
SILICON |
2.5 |
||||||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
450 |
PLASTIC/EPOXY |
SINGLE |
ABRUPT |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
1 |
CYLINDRICAL |
Varactors |
30 V |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
6.8 pF |
HIGH Q, HIGH RELIABILITY |
TO-92 |
10 % |
30 V |
e0 |
235 |
SILICON |
2.5 |
||||||||||||||
|
Onsemi |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
200 |
PLASTIC/EPOXY |
SINGLE |
1 |
CYLINDRICAL |
150 Cel |
TIN LEAD |
O-PBCY-T2 |
Not Qualified |
.28 W |
33 pF |
HIGH RELIABILITY, EUROPEAN PART NUMBER |
TO-92 |
10 % |
30 V |
e0 |
SILICON |
2.5 |
Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.
Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.
Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.
Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.