Infineon Technologies Varactor Diodes 432

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB640E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE					TIN	R-PDSO-G2	1	Not Qualified					e3			SILICON	19.5
BBY5702VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE																			TIN		1						e3
BB639E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1		38.3 pF	LOW INDUCTANCE	5.26 %	30 V	e3			SILICON	9.8
BB914E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE					TIN	R-PDSO-G3	1	Not Qualified	43.75 pF	1.5% MATCHED SETS AVAILABLE	2.86 %	18 V	e3			SILICON	2.28
BBY6602VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE																			TIN		1						e3
BB814E6327GR1HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE																			TIN		1						e3
BBY6502VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	1		29.5 pF		4.41 %	15 V	e3			SILICON	10
BB844E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G3	1		43.75 pF	CAPACITANCE MATCHED TO 1.5%	2.86 %	18 V	e3			SILICON	3.2
BBY5303WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2	1		5.3 pF		9.43 %	6 V	e3			SILICON	1.8
BB639CE7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1		39 pF		7.01 %	35 V	e3			SILICON	9.5
BBY5502VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-F2	1		18.6 pF		5.66 %	16 V	e3			SILICON	2
BB659C02VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-F2			39 pF		7.01 %	35 V	e3			SILICON	9.5
BBY5303WE6327XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			5.3 pF		9.43 %	6 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.8
BBY5802VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	1		18.3 pF		4.89 %	10 V	e3			SILICON	1.15
BB639-E7904	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V			MATTE TIN		1		38.3 pF				e3		260
BB639-E7904XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2			38.3 pF		5.26 %	30 V	e3			SILICON	9.8
BB639C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V				R-PDSO-G2	1	Not Qualified	39 pF		7.01 %	35 V				SILICON	9.5
BB639CE7908	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V					1		39 pF						260
BB639CE7908HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE																												NOT SPECIFIED	NOT SPECIFIED
BBY66-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors						1		68.7 pF						260
BBY53-03WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	6 V			MATTE TIN	R-PDSO-G2	1	Not Qualified	5.3 pF			6 V	e3		260	SILICON	1.8
BB55502VH7912XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			18.7 pF	LOW INDUCTANCE	6.67 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	6
BB545E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1		20 pF	LOW INDUCTANCE	7.5 %		e3			SILICON	6.3
SP000010401	Infineon Technologies	VARIABLE CAPACITANCE DIODE
SP000743566	Infineon Technologies	VARIABLE CAPACITANCE DIODE
SD198E6553-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V							30.1 pF
SD198E6553-E6377	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V							30.1 pF
SD197E6552-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V							15 pF
SP000743550	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-F2			5.3 pF		9.43 %	6 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.8
SD197E6552-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V							15 pF
SP000743556	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			18.6 pF		5.66 %	16 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BB640E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2		Not Qualified	69 pF					NOT SPECIFIED	NOT SPECIFIED	SILICON	19.5
BBY34C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	400	CERAMIC, METAL-SEALED COFIRED	SINGLE	HYPERABRUPT			1		MICROWAVE						O-CEMW-N2		Not Qualified	3.4 pF			22 V				SILICON	4.3
BB565-02VE7912	Infineon Technologies
BB659C-H7903	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V					1		39 pF						260
BB814	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		SMALL OUTLINE	Varactors	18 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified	44.75 pF	CAPACITANCE MATCHED TO 3%	3.91 %	18 V	e3			SILICON	2.05
BB833E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		S BAND		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2	1	Not Qualified	9.3 pF		8.11 %	35 V			260	SILICON	11
BB867-02V-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V							8.7 pF
BB659-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V							38.3 pF
BBY27S2	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES		200									Varactors	140 V							38 pF
BB565	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified	20 pF	LOW INDUCTANCE	7.5 %					SILICON	6.3
BB664	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified	41.8 pF		6.59 %	30 V				SILICON	11
BB664-E7912	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V							41.8 pF
BB619C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2		Not Qualified	39 pF	2.5% MATCHED SETS ARE AVAILABLE		35 V				SILICON	13.5
BB914E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	18 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	43.75 pF	1.5% MATCHED SETS AVAILABLE	2.86 %	18 V	e3		260	SILICON	2.28
BB689-H7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V			MATTE TIN		1		56.5 pF				e3		260
BB669E7904XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2			56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %					SILICON	14.5
BB204B-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3		Not Qualified				32 V				SILICON	2.55

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.