BUFFER Logic Gates 2,400+

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Part	Manufacturer	Logic IC Type	Temperature Grade	Terminal Form	No. of Terminals	Package Code	Package Shape	Package Body Material	Schmitt Trigger	Surface Mount	No. of Functions	Technology	Screening Level	No. of Inputs	Packing Method	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Load Capacitance (CL)	Package Style (Meter)	Package Equivalence Code	Propagation Delay (tpd)	Maximum I (ol)	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Family
74AUP2G3407GN	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	SON	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS		1		1.1			SMALL OUTLINE		20.8 ns			.3 mm	125 Cel	OPEN-DRAIN	-40 Cel		DUAL	R-PDSO-N6		3.6 V	.35 mm	.9 mm		.8 V				1 mm	AUP/ULP/V
74HCT9115D	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	20	SOP	RECTANGULAR	PLASTIC/EPOXY		YES	9	CMOS		1		5		50 pF	SMALL OUTLINE		47 ns			1.27 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G20	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	4.5 V	e4			12.8 mm	HCT
74HC2G34GW-Q100H	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	6	TSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	2	CMOS	AEC-Q100	1	TR	5	2/6	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP6,.08	125 ns	4 Amp	Gates	.65 mm	125 Cel		-40 Cel		DUAL	R-PDSO-G6		6 V	1.1 mm	1.25 mm	Not Qualified	2 V				2 mm	HC/UH
74AUP1G17GM,115	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	YES	1	CMOS		1	TR	1.1	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,20	20.1 ns	1.7 Amp	Gates	.5 mm	125 Cel		-40 Cel	Tin (Sn)	DUAL	R-PDSO-N6	1	3.6 V	.5 mm	1 mm	Not Qualified	.8 V	e3	30	260	1.45 mm	AUP/ULP/V
74HC3G34DC,125	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	3	CMOS		1	TR	5	2/6	50 pF	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20	125 ns	4 Amp	Gates	.5 mm	125 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G8	1	6 V	1 mm	2 mm	Not Qualified	2 V	e4	30	260	2.3 mm	HC/UH
74AXP2G34GM	NXP Semiconductors	BUFFER	INDUSTRIAL	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS		1		1.2			SMALL OUTLINE, VERY THIN PROFILE		110 ns			.5 mm	85 Cel		-40 Cel		DUAL	R-PDSO-N6		2.75 V	.5 mm	1 mm		.7 V				1.45 mm	AXP
74LVC1G07GW/DG,125	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		1		1.8			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8.4 ns			.65 mm	125 Cel	OPEN-DRAIN	-40 Cel	TIN	DUAL	R-PDSO-G5	1	5.5 V	1.1 mm	1.25 mm	Not Qualified	1.65 V	e3			2.05 mm	LVC/LCX/Z
74LVC07AD,118	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	14	SOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	6	CMOS		1	TR	1.8	3.3	50 pF	SMALL OUTLINE	SOP14,.25	4.5 ns	24 Amp	Gates	1.27 mm	125 Cel	OPEN-DRAIN	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G14	1	5.5 V	1.75 mm	3.9 mm	Not Qualified	1.65 V	e4	30	260	8.65 mm	LVC/LCX/Z
74HC2G17GV-G	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	6	TSSOP	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS		1		5			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		175 ns			.95 mm	125 Cel		-40 Cel	TIN	DUAL	R-PDSO-G6	1	6 V	1.1 mm	1.5 mm	Not Qualified	2 V	e3			2.9 mm	HC/UH
74AXP1T34GS	NXP Semiconductors	BUFFER	INDUSTRIAL	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY		YES	1	CMOS		1		1.2			SMALL OUTLINE, VERY THIN PROFILE		210 ns			.35 mm	85 Cel		-40 Cel		DUAL	S-PDSO-N6		2.75 V	.35 mm	1 mm		.7 V				1 mm	AXP
74AUP1G07GM	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY	NO	YES	1	CMOS		1		1.1	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,20	20.7 ns	1.7 Amp	Gates	.5 mm	125 Cel	OPEN-DRAIN	-40 Cel	Tin (Sn)	DUAL	R-PDSO-N6	1	3.6 V	.5 mm	1 mm	Not Qualified	.8 V	e3	30	260	1.45 mm	AUP/ULP/V
74HC3G07GD,125	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	8	VSON	RECTANGULAR	PLASTIC/EPOXY	NO	YES	3	CMOS		1	TR	5	2/6	50 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,20	125 ns	4 Amp	Gates	.5 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N8	1	6 V	.5 mm	2 mm	Not Qualified	2 V	e4	30	260	3 mm	HC/UH
74HC9115N	NXP Semiconductors	BUFFER	AUTOMOTIVE	THROUGH-HOLE	20	DIP	RECTANGULAR	PLASTIC/EPOXY	YES	NO	9	CMOS		1		5	2/6	50 pF	IN-LINE	DIP20,.3	33 ns	4 Amp	Gates	2.54 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDIP-T20		6 V	4.2 mm	7.62 mm	Not Qualified	2 V	e4			26.73 mm	HC/UH
74LVC1G07GX	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	5	HVSON	SQUARE	PLASTIC/EPOXY		YES	1	CMOS		1		3.3			SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8.4 ns			.48 mm	125 Cel	OPEN-DRAIN	-40 Cel	TIN	DUAL	S-PDSO-N5	1	5.5 V	.35 mm	.8 mm		1.65 V	e3			.8 mm	LVC/LCX/Z
74AUP1T34GF	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	1	CMOS		1	TR	1.2	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	33.5 ns	1.7 Amp	Gates	.35 mm	125 Cel		-40 Cel	Tin (Sn)	DUAL	S-PDSO-N6	1	3.6 V	.5 mm	1 mm	Not Qualified	1.1 V	e3	30	260	1 mm	AUP/ULP/V
74AUP2G34GM,132	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY	NO	YES	1	CMOS		1			1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,20	20.8 ns	1.7 Amp	Gates	.5 mm	125 Cel		-40 Cel	Tin (Sn)	DUAL	R-PDSO-N6	1	3.6 V	.5 mm	1 mm	Not Qualified	.8 V	e3	30	260	1.45 mm	AUP/ULP/V
74AUP2G3407GS	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY		YES	2	CMOS		1		1.1			SMALL OUTLINE, VERY THIN PROFILE		20.8 ns			.35 mm	125 Cel	OPEN-DRAIN	-40 Cel		DUAL	S-PDSO-N6		3.6 V	.35 mm	1 mm		.8 V				1 mm	AUP/ULP/V
74AXP2G07GS	NXP Semiconductors	BUFFER	INDUSTRIAL	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY		YES	2	CMOS		1		1.2			SMALL OUTLINE, VERY THIN PROFILE		82 ns			.35 mm	85 Cel	OPEN-DRAIN	-40 Cel		DUAL	S-PDSO-N6		2.75 V	.35 mm	1 mm		.7 V				1 mm	AXP
N74F07AN	NXP Semiconductors	BUFFER	COMMERCIAL	THROUGH-HOLE	14	DIP	RECTANGULAR	PLASTIC/EPOXY		NO	6	TTL		1		5			IN-LINE		17 ns			2.54 mm	70 Cel	OPEN-COLLECTOR	0 Cel		DUAL	R-PDIP-T14		5.5 V	4.2 mm	7.62 mm	Not Qualified	4.5 V				19.025 mm	F/FAST
74AUP2G17GS	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY		YES	2	CMOS		1		1.1			SMALL OUTLINE, VERY THIN PROFILE		20.1 ns			.35 mm	125 Cel		-40 Cel	TIN	DUAL	S-PDSO-N6	1	3.6 V	.35 mm	1 mm	Not Qualified	.8 V	e3			1 mm	AUP/ULP/V
74AUP2G17GS,132	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	YES	YES	2	CMOS		1		1.1	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	20.1 ns	1.7 Amp	Gates	.35 mm	125 Cel		-40 Cel	TIN	DUAL	S-PDSO-N6	1	3.6 V	.35 mm	1 mm	Not Qualified	.8 V	e3	30	260	1 mm	AUP/ULP/V
74HC2G34GW	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	6	TSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	2	CMOS		1	TR	5	2/6	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP6,.08	125 ns	4 Amp	Gates	.65 mm	125 Cel		-40 Cel	Tin (Sn)	DUAL	R-PDSO-G6	1	6 V	1.1 mm	1.25 mm	Not Qualified	2 V	e3	30	260	2 mm	HC/UH
74HCT3G07DC,125	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	3	CMOS		1	TR	5	5	50 pF	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20	32 ns	4 Amp	Gates	.5 mm	125 Cel	OPEN-DRAIN	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G8	1	5.5 V	1 mm	2 mm	Not Qualified	4.5 V	e4	30	260	2.3 mm	HCT
74LVC07APW-Q100	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY		YES	6	CMOS	AEC-Q100	1		1.8			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		6.5 ns			.65 mm	125 Cel	OPEN-DRAIN	-40 Cel		DUAL	R-PDSO-G14	1	5.5 V	1.1 mm	4.4 mm		1.65 V				5 mm	LVC/LCX/Z
74AUP1T34GS	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	1	CMOS		1		1.2	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	33.5 ns	1.7 Amp	Gates	.35 mm	125 Cel		-40 Cel	Tin (Sn)	DUAL	S-PDSO-N6	1	3.6 V	.35 mm	1 mm	Not Qualified	1.1 V	e3	30	260	1 mm	AUP/ULP/V
74LVC1G34GN	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	SON	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		1		3.3			SMALL OUTLINE		11 ns			.3 mm	125 Cel		-40 Cel	TIN	DUAL	R-PDSO-N6	1	5.5 V	.35 mm	.9 mm	Not Qualified	1.65 V	e3			1 mm	LVC/LCX/Z
74AUP2G3407GFH	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	YES	YES	2	CMOS		1	TR	1.1	1.2/3.3	50 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	20.8 ns	1.7 Amp	Gates	.35 mm	125 Cel	OPEN-DRAIN	-40 Cel		DUAL	S-PDSO-N6		3.6 V	.5 mm	1 mm	Not Qualified	.8 V				1 mm	AUP/ULP/V
74LVC2G16GN	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	SON	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS		1		1.8			SMALL OUTLINE		10.8 ns			.3 mm	125 Cel		-40 Cel		DUAL	R-PDSO-N6		5.5 V	.35 mm	.9 mm		1.65 V				1 mm	LVC/LCX/Z
74LVC2G16GM	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS		1		1.8			SMALL OUTLINE, VERY THIN PROFILE		10.8 ns			.5 mm	125 Cel		-40 Cel		DUAL	R-PDSO-N6		5.5 V	.5 mm	1 mm		1.65 V				1.45 mm	LVC/LCX/Z
74LVC1G34GW-Q100	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	1		3.3			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		11 ns			.65 mm	125 Cel		-40 Cel	TIN	DUAL	R-PDSO-G5	1	5.5 V	1.1 mm	1.25 mm		1.65 V	e3			2.05 mm	LVC/LCX/Z
74AUP1G07GM-G	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		1		1.1			SMALL OUTLINE, VERY THIN PROFILE		20.7 ns			.5 mm	125 Cel	OPEN-DRAIN	-40 Cel	TIN	DUAL	R-PDSO-N6	1	3.6 V	.5 mm	1 mm	Not Qualified	.8 V	e3			1.45 mm	AUP/ULP/V
74AXP2T3407GS,115	NXP Semiconductors	BUFFER	INDUSTRIAL	NO LEAD	8	VSON	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS		1		1.2			SMALL OUTLINE, VERY THIN PROFILE		225 ns			.35 mm	85 Cel	OPEN-DRAIN	-40 Cel		DUAL	R-PDSO-N8		2.75 V	.35 mm	1 mm		.7 V				1.35 mm	AXP
74AUP2G17GM-G	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	SON	RECTANGULAR	PLASTIC/EPOXY	YES	YES	2	CMOS		1	TR	3.3	1.2/3.3	30 pF	SMALL OUTLINE	SOLCC6,.04,20	20.1 ns	1.7 Amp	Gates	.5 mm	125 Cel		-40 Cel		DUAL	R-PDSO-N6		3.6 V			Not Qualified	.8 V
74AXP2G07GN	NXP Semiconductors	BUFFER	INDUSTRIAL	NO LEAD	6	SON	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS		1		1.2			SMALL OUTLINE		82 ns			.3 mm	85 Cel	OPEN-DRAIN	-40 Cel		DUAL	R-PDSO-N6		2.75 V	.35 mm	.9 mm		.7 V				1 mm	AXP
74HC2G34GW-Q100,125	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	6	TSSOP	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS	AEC-Q100	1		5			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		125 ns			.65 mm	125 Cel		-40 Cel		DUAL	R-PDSO-G6		6 V	1.1 mm	1.25 mm		2 V				2 mm	HC/UH
74AHC1G07GV	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	1	CMOS		1		5	2/5.5	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	12.5 ns	4 Amp	Gates	.95 mm	125 Cel	OPEN-DRAIN	-40 Cel	Tin (Sn)	DUAL	R-PDSO-G5	1	5.5 V	1.1 mm	1.5 mm	Not Qualified	2 V	e3	30	260	2.9 mm	AHC
74AUP1T34GX,125	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	5	SON	SQUARE	PLASTIC/EPOXY		YES	1	CMOS		1		1.2			SMALL OUTLINE		33.5 ns			.48 mm	125 Cel		-40 Cel		DUAL	S-PDSO-N5		3.6 V	.35 mm	.8 mm		1.1 V				.8 mm	AUP/ULP/V
74AUP3G07GM	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	8	VQCCN	SQUARE	PLASTIC/EPOXY		YES	3	CMOS		1		1.1			CHIP CARRIER, VERY THIN PROFILE		20.7 ns			.5 mm	125 Cel	OPEN-DRAIN	-40 Cel		QUAD	S-PQCC-N8		3.6 V	.5 mm	1.6 mm		.8 V				1.6 mm	AUP/ULP/V
74AUP3G07GT	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	8	VSON	RECTANGULAR	PLASTIC/EPOXY		YES	3	CMOS		1		1.1			SMALL OUTLINE, VERY THIN PROFILE		20.7 ns			.5 mm	125 Cel	OPEN-DRAIN	-40 Cel		DUAL	R-PDSO-N8		3.6 V	.5 mm	1 mm		.8 V				1.95 mm	AUP/ULP/V
74AUP2G34GS,132	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	1	CMOS		1	TR	1.1	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	20.8 ns	1.7 Amp	Gates	.35 mm	125 Cel		-40 Cel	TIN	DUAL	S-PDSO-N6	1	3.6 V	.35 mm	1 mm	Not Qualified	.8 V	e3	30	260	1 mm	AUP/ULP/V
74HC7014T	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	14	SOP	RECTANGULAR	PLASTIC/EPOXY		YES	6	CMOS		1		5		50 pF	SMALL OUTLINE		175 ns				125 Cel		-40 Cel		DUAL	R-PDSO-G14		6 V			Not Qualified	3 V					HC/UH
74AUP1G07GS,132	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	1	CMOS		1	TR	1.1	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	20.7 ns	1.7 Amp	Gates	.35 mm	125 Cel	OPEN-DRAIN	-40 Cel	TIN	DUAL	S-PDSO-N6	1	3.6 V	.35 mm	1 mm	Not Qualified	.8 V	e3	30	260	1 mm	AUP/ULP/V
74AUP2G17GN	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	SON	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS		1		1.1			SMALL OUTLINE		20.1 ns			.3 mm	125 Cel		-40 Cel	TIN	DUAL	R-PDSO-N6	1	3.6 V	.35 mm	.9 mm	Not Qualified	.8 V	e3			1 mm	AUP/ULP/V
74HCT3G07DP-Q100	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	8	TSSOP	SQUARE	PLASTIC/EPOXY		YES	3	CMOS	AEC-Q100	1		5			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		32 ns			.65 mm	125 Cel	OPEN-DRAIN	-40 Cel		DUAL	S-PDSO-G8		5.5 V	1.1 mm	3 mm		4.5 V				3 mm	HCT
74LVC3G07DP-G	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES		CMOS			TR	3.3	3.3	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.16		24 Amp	Gates	.635 mm	125 Cel	OPEN-DRAIN	-40 Cel		DUAL	R-PDSO-G8					Not Qualified
74LVC2G34GN,132	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	SON	RECTANGULAR	PLASTIC/EPOXY	NO	YES	2	CMOS		1	TR	1.8	3.3	50 pF	SMALL OUTLINE	SOLCC6,.04,12	10.8 ns	24 Amp	Gates	.3 mm	125 Cel		-40 Cel	TIN	DUAL	R-PDSO-N6	1	5.5 V	.35 mm	.9 mm	Not Qualified	1.65 V	e3	30	260	1 mm	LVC/LCX/Z
74AHCT1G17GVH	NXP Semiconductors	BUFFER	AUTOMOTIVE	GULL WING	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		1		5			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		11 ns			.95 mm	125 Cel		-40 Cel		DUAL	R-PDSO-G5		5.5 V	1.1 mm	1.5 mm		4.5 V				2.9 mm	AHCT/VHCT/VT
74AUP1T34GS,132	NXP Semiconductors	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	1	CMOS		1	TR	1.2	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	33.5 ns	1.7 Amp	Gates	.35 mm	125 Cel		-40 Cel	TIN	DUAL	S-PDSO-N6	1	3.6 V	.35 mm	1 mm	Not Qualified	1.1 V	e3	30	260	1 mm	AUP/ULP/V

Logic Gates

Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.

Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.

Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.

Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.

Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.

Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.