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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
5962-8767604XA	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH			12.26 mm	100 ns
MT1259EC-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS		NO LEAD			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0			80 ns
MT1258Z-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			150 ns
5962-8767601VC	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-XDIP-T18	5.5 V			Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				120 ns
MT1259EJ-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			80 ns
MT1259EC-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS		NO LEAD			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0			120 ns
5962-8767604VC	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-XDIP-T18	5.5 V			Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				100 ns
MT4264EC-15M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	NO LEAD		40 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	65536 bit			e0			150 ns
5962-8767603XA	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH			12.26 mm	200 ns
5962-01-317-6623	Micron Technology	PAGE MODE DRAM	OTHER	16	DFP	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	FLAT		40 mA	65536 words	SEPARATE	5	5	1	FLATPACK	FL16,.3	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDFP-F16				Not Qualified	65536 bit						120 ns
5962-8767601XX	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH			12.26 mm	120 ns
MT1259Z-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		55 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			120 ns
5962-8767601VX	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-XDIP-T18	5.5 V			Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				120 ns
MT1259Z-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		45 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			150 ns
5962-8767602XX	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH			12.26 mm	150 ns
MT1259EJ-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND		55 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			120 ns
MT1259EC-15M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	NO LEAD		55 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0			150 ns
5962-8767603VX	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-XDIP-T18	5.5 V			Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				200 ns
MT8257M-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		NO LEAD			262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE		R-PSMA-N30		16.51 mm		Not Qualified	2097152 bit						200 ns
MT1259-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		55 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			100 ns
MT1259C-8XT	Micron Technology	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		65 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			80 ns
MT4264EC-10M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	NO LEAD		40 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	65536 bit			e0			100 ns
5962-8767601VA	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED		NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-GDIP-T18	5.5 V			Not Qualified	262144 bit	4.5 V					120 ns
MT3D2569M-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		210 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30		12.1412 mm		Not Qualified	2359296 bit				.003 Amp		80 ns
MT1258C-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			120 ns
MT1258Z-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			200 ns
MT1258-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			120 ns
MT1258-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			200 ns
MT1258Z-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			120 ns
MT4264C-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0			120 ns
MT3D2569M-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		180 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30		12.1412 mm		Not Qualified	2359296 bit				.003 Amp		100 ns
MT4264C-12M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		40 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0			120 ns
MT88512DM-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		NO LEAD		810 mA	524288 words	COMMON			8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		SINGLE		R-PSMA-N30				Not Qualified	4194304 bit						200 ns
MT1259EC-12/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD		55 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0			120 ns
MT1259EC-12XT	Micron Technology	PAGE MODE DRAM	MILITARY		QCCN	256		CERAMIC		YES		MOS		NO LEAD			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC(UNSPEC)	DRAMs		125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD						Not Qualified	262144 bit			e0			120 ns
MT4264-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		30 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			200 ns
MT4264-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		30 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			100 ns
MT1259EJ-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			200 ns
MT1259EC-10XT	Micron Technology	PAGE MODE DRAM	MILITARY		QCCN	256		CERAMIC		YES		MOS		NO LEAD			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC(UNSPEC)	DRAMs		125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD						Not Qualified	262144 bit			e0			100 ns
MT1259C-10XT	Micron Technology	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			100 ns
MT1259EJ-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND		45 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			150 ns
MT1259C-10M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		55 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			100 ns
MT4264EC-12M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	NO LEAD		40 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	65536 bit			e0			120 ns
MT1259C-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			80 ns
MT4259M-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL			256		PLASTIC/EPOXY		NO		MOS					262144 words	SEPARATE	5	5	4		SIP(UNSPEC)	DRAMs		70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0			120 ns
MT1258C-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			200 ns
MT1259C-20XT	Micron Technology	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			200 ns
MT4264F-12M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DFP	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	FLAT		40 mA	65536 words	SEPARATE	5	5	1	FLATPACK	FL16,.3	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F16				Not Qualified	65536 bit			e0			120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.