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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KMM58256AP10	Samsung	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		130 mA	262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE		R-PSMA-N30					Not Qualified	2097152 bit						100 ns
KM41256AZ-10	Samsung	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		85 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	ZIG-ZAG		R-PZIP-T16	3				Not Qualified	262144 bit			e0			100 ns
KM41464AZ-15	Samsung	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		65 mA	65536 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	ZIG-ZAG		R-PZIP-T20	3				Not Qualified	262144 bit			e0			150 ns
KMM48256-15	Samsung	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS				520 mA	262144 words	COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					16.51 mm		Not Qualified	2097152 bit			e0			150 ns
KM41256-10PJ	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			100 ns
KM4128P20	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	131072 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	131072 bit			e0			200 ns
KM41464AP-15	Samsung	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		65 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	DUAL		R-PDIP-T18	3				Not Qualified	262144 bit			e0			150 ns
KMM511024-12	Samsung	PAGE MODE DRAM	COMMERCIAL	22	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		NO LEAD		88 mA	1048576 words	SEPARATE			1	MICROELECTRONIC ASSEMBLY	SIM22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		SINGLE		R-PSMA-N22					Not Qualified	1048576 bit						120 ns
KMM49256-12	Samsung	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS				675 mA	262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					16.51 mm		Not Qualified	2359296 bit			e0			120 ns
KM41464AP-10	Samsung	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	DUAL		R-PDIP-T18	3				Not Qualified	262144 bit			e0			100 ns
KM41464AJ-12	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND		75 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			120 ns
KM4164BP-15	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS	45 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T16		5.5 V	4.65 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY/HIDDEN REFRESH	e0		19.43 mm	150 ns
KM41256AZ-12	Samsung	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		75 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	ZIG-ZAG		R-PZIP-T16	3				Not Qualified	262144 bit			e0			120 ns
KM4164BP-10	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS	60 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T16		5.5 V	4.65 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY/HIDDEN REFRESH	e0		19.43 mm	100 ns
KM41464AP-12	Samsung	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		75 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	DUAL		R-PDIP-T18	3				Not Qualified	262144 bit			e0			120 ns
KM41256AP-10	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		85 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	DUAL		R-PDIP-T16	3				Not Qualified	262144 bit			e0			100 ns
KM41464AJ-15	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND		65 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			150 ns
KM41464AJ-10	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND			65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			100 ns
KM4164BP-12	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS	50 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T16		5.5 V	4.65 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY/HIDDEN REFRESH	e0		19.43 mm	120 ns
KM41256AJ-10	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND		85 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			100 ns
KMM411024-12	Samsung	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS				88 mA	1048576 words	SEPARATE			1		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	1048576 bit			e0			120 ns
KM41256AP-15	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		65 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	DUAL		R-PDIP-T16	3				Not Qualified	262144 bit			e0			150 ns
KM4164A20N	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	65536 bit			e0			200 ns
KM4128P15	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	131072 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	131072 bit			e0			150 ns
KM4164A12N	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	65536 bit			e0			120 ns
KM41256AJ-15	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND		65 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	QUAD		R-PQCC-J18	3				Not Qualified	262144 bit			e0			150 ns
KMM49256-15	Samsung	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS				585 mA	262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					16.51 mm		Not Qualified	2359296 bit			e0			150 ns
MT4264F-15M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DFP	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	FLAT		40 mA	65536 words	SEPARATE	5	5	1	FLATPACK	FL16,.3	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F16					Not Qualified	65536 bit			e0			150 ns
MT1259C-15M070	Micron Technology	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		55 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	262144 bit			e0			150 ns
MT4264C-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	65536 bit			e0			150 ns
MT8257M-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		NO LEAD			262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE		R-PSMA-N30			16.51 mm		Not Qualified	2097152 bit						120 ns
MT3D2569M-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		150 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30			12.1412 mm		Not Qualified	2359296 bit				.003 Amp		120 ns
MT1259Z-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16					Not Qualified	262144 bit			e0			80 ns
5962-01-368-3808	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS		NO LEAD			65536 words	COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		QUAD		R-XQCC-N18					Not Qualified	262144 bit						120 ns
MT1259C-12XT	Micron Technology	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	262144 bit			e0			120 ns
MT4264C-10M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		40 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	65536 bit			e0			100 ns
5962-8767604VA	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED		NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-GDIP-T18		5.5 V			Not Qualified	262144 bit	4.5 V					100 ns
MT3D2569N-7	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS				240 mA	262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					13.0302 mm		Not Qualified	2359296 bit			e0	.003 Amp		70 ns
MT1259-8XT	Micron Technology	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		65 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	262144 bit			e0			80 ns
MT1259EC-20XT	Micron Technology	PAGE MODE DRAM	MILITARY		QCCN	256		CERAMIC		YES		MOS		NO LEAD			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC(UNSPEC)	DRAMs		125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD							Not Qualified	262144 bit			e0			200 ns
MT4259MN-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS				180 mA	262144 words	SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	1048576 bit			e0			150 ns
MT1259EC-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS		NO LEAD			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18					Not Qualified	262144 bit			e0			100 ns
MT3D2569N-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS				180 mA	262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					13.0302 mm		Not Qualified	2359296 bit			e0	.003 Amp		100 ns
5962-8767602VC	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-XDIP-T18		5.5 V			Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				150 ns
5962-8767602XA	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18		5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH			12.26 mm	150 ns
5962-8767602VA	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED		NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-GDIP-T18		5.5 V			Not Qualified	262144 bit	4.5 V					150 ns
MT3D2569N-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS				210 mA	262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					13.0302 mm		Not Qualified	2359296 bit			e0	.003 Amp		80 ns
5962-8767602VX	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-XDIP-T18		5.5 V			Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				150 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.