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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Seated Height	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
UPD411000C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18		Not Qualified	1048576 bit	e0		150 ns
UPD41256C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	262144 bit	e0		150 ns
UPD41256L-85	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND	90 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		85 ns
UPD41256C-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	262144 bit	e0		120 ns
MC-42256AB9BA-70	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	240 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2359296 bit		.003 Amp	70 ns
UPD416-5	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16		Not Qualified	16384 bit	e0		120 ns
UPD41464V-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20		Not Qualified	262144 bit	e0		150 ns
MC-41256A4C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		CERAMIC	NO	MOS			262144 words	SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	1048576 bit	e0		150 ns
MC-41256A8A-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY	NO	MOS			262144 words	COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	Tin/Lead (Sn/Pb)	SINGLE		18.0086 mm	Not Qualified	2097152 bit	e0		150 ns
UPD416-1	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16		Not Qualified	16384 bit	e0		250 ns
UPD4164D-20	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16		Not Qualified	65536 bit	e0		200 ns
MC-41256A9B-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	NO LEAD	720 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2359296 bit			100 ns
MC-41256A5A-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	24		256		PLASTIC/EPOXY	NO	MOS			262144 words	SEPARATE	5	5	5		SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX5	256K	Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	1310720 bit	e0		150 ns
UPD41464C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18		Not Qualified	262144 bit	e0		150 ns
UPD411000LA-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND	100 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20		Not Qualified	1048576 bit	e0		100 ns
UPD414D	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16		Not Qualified	4096 bit	e0		300 ns
MC-41256A9A-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY	NO	MOS			262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	Tin/Lead (Sn/Pb)	SINGLE		18.0086 mm	Not Qualified	2359296 bit	e0		150 ns
UPD42601V-60L	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	12 mA	1048576 words	SEPARATE			1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20		Not Qualified	1048576 bit	e0	.0005 Amp	600 ns
UPD4164C-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	65536 bit	e0		100 ns
UPD41464L-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND	85 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		80 ns
UPD4164C-20	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	65536 bit	e0		200 ns
UPD41256L-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		120 ns
UPD41256L-20	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		200 ns
UPD4164D-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16		Not Qualified	65536 bit	e0		150 ns
UPD42601C-60L	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	12 mA	1048576 words	SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18		Not Qualified	1048576 bit	e0	.0005 Amp	600 ns
MC-424512A36B-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	744 mA	524288 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		512KX36	512K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	18874368 bit		.016 Amp	100 ns
MC-42256AB9FA-70	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	240 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2359296 bit		.003 Amp	70 ns
UPD41256C-20	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	262144 bit	e0		200 ns
UPD41256C-85	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	90 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	262144 bit	e0		85 ns
UPD41256L-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND	80 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		100 ns
UPD41256C-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	90 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	262144 bit	e0		80 ns
MC-424256A36B-85	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	808 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	9437184 bit		.008 Amp	85 ns
UPD414C	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	4096 bit	e0		300 ns
UPD41464L-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		150 ns
UPD4164D-3	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16		Not Qualified	65536 bit	e0		150 ns
MC-424512A36F-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1024 mA	524288 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		512KX36	512K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	18874368 bit		.016 Amp	80 ns
UPD416D-1	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16		Not Qualified	16384 bit	e0		250 ns
MC-424512A36F-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	744 mA	524288 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		512KX36	512K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	18874368 bit		.016 Amp	100 ns
UPD41256C-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	80 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	262144 bit	e0		100 ns
MC-41256A8B-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	NO LEAD	720 mA	262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2097152 bit			80 ns
UPD414C-E	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	4096 bit	e0		350 ns
UPD414256C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	COMMON			4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20		Not Qualified	1048576 bit	e0		150 ns
UPD41464L-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND	75 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		120 ns
5962-01-130-3729	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		DUAL	R-PDIP-T16		Not Qualified	16384 bit			200 ns
MC-42256AB9BA-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	180 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2359296 bit		.003 Amp	100 ns
MC-41256A4A-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY	NO	MOS			262144 words	SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	1048576 bit	e0		100 ns
MC-424256A36B-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	680 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	9437184 bit		.008 Amp	100 ns
5962-01-311-1916	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		DUAL	R-XDIP-T16		Not Qualified	16384 bit			300 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.