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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TMM41256AP-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		65 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			150 ns
TMM41256AT-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		72 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			120 ns
TMM4164P-4	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			200 ns
TC524257P-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		4	IN-LINE			2.54 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDIP-T28	5.5 V	4.45 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0			120 ns
TMM41464AZ-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		80 mA	65536 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	262144 bit			e0			100 ns
TMM411000C-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0			120 ns
TC524257Z-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	28	ZIP		RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		4	IN-LINE			1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0		36.2 mm	120 ns
TMM41256C-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			150 ns
TMM41256T-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			150 ns
TMM41464AZ-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		65 mA	65536 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	262144 bit			e0			150 ns
TMM41256P-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			120 ns
TC524257J-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J32	5.5 V	3.6 mm	10.2 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0		21 mm	100 ns
TC524257P-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		4	IN-LINE			2.54 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDIP-T28	5.5 V	4.45 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0			100 ns
TMM4164AP-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			150 ns
TMM416P-2	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	16384 bit			e0			150 ns
TMM41464AP-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		80 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	262144 bit			e0			100 ns
TC524256J-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J32	5.5 V	3.6 mm	10.2 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0		21 mm	120 ns
TMM41256AZ-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		72 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			120 ns
TMM411000C-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0			100 ns
TMM416P-3	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	16384 bit			e0			200 ns
TMM41256AZ-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		65 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			150 ns
TC524256J-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J32	5.5 V	3.6 mm	10.2 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0		21 mm	100 ns
UPD416-2	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0			200 ns
UPD41464C-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		85 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	262144 bit			e0			80 ns
MC-41256A9B-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD		810 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2359296 bit						80 ns
UPD411000C-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0			100 ns
MC-411000A1A-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS				1048576 words	SEPARATE			1		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0			120 ns
MC-41256A8B-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2097152 bit						120 ns
UPD41256D-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			150 ns
MC-424256A36F-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		960 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	0 Cel		SINGLE		R-PSMA-N72		25.4 mm		Not Qualified	9437184 bit				.008 Amp		80 ns
MC-424256A36B-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		960 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	0 Cel		SINGLE		R-PSMA-N72		25.4 mm		Not Qualified	9437184 bit				.008 Amp		80 ns
MC-42256AB9BA-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		210 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2359296 bit				.003 Amp		80 ns
UPD2118D-2	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE		22 mA	16384 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel	3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0			120 ns
MC-41256A5C-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	24		256		CERAMIC		NO		MOS				262144 words	SEPARATE	5	5	5		SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX5	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1310720 bit			e0			120 ns
UPD414C-1	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			4096 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	4096 bit			e0			250 ns
UPD2118D-3	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE		25 mA	16384 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel	3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0			100 ns
UPD414256C-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words	COMMON			4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	1048576 bit			e0			120 ns
UPD4265C-20	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			65536 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			200 ns
UPD41464L-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		80 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			100 ns
MC-42256AB9FA-60	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		270 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2359296 bit				.003 Amp		60 ns
MC-411000A1A-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS				1048576 words	SEPARATE			1		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0			150 ns
UPD41464V-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	262144 bit			e0			100 ns
UPD416D	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0			300 ns
MC-41256A9A-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS				262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE				18.0086 mm		Not Qualified	2359296 bit			e0			120 ns
UPD4164C-1	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			250 ns
UPD2118C-2	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		22 mA	16384 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel	3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	16384 bit			e0			120 ns
UPD41416-20	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		45 mA	16384 words	COMMON			4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	65536 bit			e0			200 ns
MC-424512A36B-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1024 mA	524288 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		512KX36	512K	0 Cel		SINGLE		R-PSMA-N72		25.4 mm		Not Qualified	18874368 bit				.016 Amp		80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.