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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Seated Height	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
UPD416C-1	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16			Not Qualified	16384 bit	e0		250 ns
UPD414D-E	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16			Not Qualified	4096 bit	e0		350 ns
MC-41256A9B-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	NO LEAD		262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30		16.7894 mm	Not Qualified	2359296 bit			150 ns
MC-41256A8B-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	NO LEAD	640 mA	262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	R-PSMA-N30		16.7894 mm	Not Qualified	2097152 bit			100 ns
MC-41256A8A-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY	NO	MOS			262144 words	COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	Tin/Lead (Sn/Pb)	SINGLE			18.0086 mm	Not Qualified	2097152 bit	e0		120 ns
UPD416C	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16			Not Qualified	16384 bit	e0		300 ns
UPD414D-1	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16			Not Qualified	4096 bit	e0		250 ns
UPD41256L-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND	90 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18			Not Qualified	262144 bit	e0		80 ns
UPD4164C-2	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16			Not Qualified	65536 bit	e0		200 ns
MC-42256AB9FA-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	180 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30		16.7894 mm	Not Qualified	2359296 bit		.003 Amp	100 ns
MC-411000A1B-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		CERAMIC	NO	MOS			1048576 words	SEPARATE			1		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	SINGLE				Not Qualified	1048576 bit	e0		150 ns
5962-01-380-8277	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K		DUAL	R-PDIP-T18			Not Qualified	262144 bit			150 ns
UPD416D-5	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16			Not Qualified	16384 bit	e0		120 ns
UPD4164D-1	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16			Not Qualified	65536 bit	e0		250 ns
MC-41256A4C-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		CERAMIC	NO	MOS			262144 words	SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE				Not Qualified	1048576 bit	e0		120 ns
5962-01-354-8226	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		DUAL	R-PDIP-T16			Not Qualified	16384 bit			150 ns
MC-41256A4A-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY	NO	MOS			262144 words	SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE				Not Qualified	1048576 bit	e0		150 ns
MC-424256A36F-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	680 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K		SINGLE	R-PSMA-N72		25.4 mm	Not Qualified	9437184 bit		.008 Amp	100 ns
UPD41416-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	55 mA	16384 words	COMMON			4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18			Not Qualified	65536 bit	e0		120 ns
MC-42256AB9BA-60	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	270 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30		16.7894 mm	Not Qualified	2359296 bit		.003 Amp	60 ns
MC-41256A5A-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	24		256		PLASTIC/EPOXY	NO	MOS			262144 words	SEPARATE	5	5	5		SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX5	256K	Tin/Lead (Sn/Pb)	SINGLE				Not Qualified	1310720 bit	e0		120 ns
UPD416C-2	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16			Not Qualified	16384 bit	e0		200 ns
UPD4164C-3	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16			Not Qualified	65536 bit	e0		150 ns
UPD41256V-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T16			Not Qualified	262144 bit	e0		120 ns
KMM58256AP8	Samsung	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	150 mA	262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	R-PSMA-N30			Not Qualified	2097152 bit			80 ns
KMM59256-15	Samsung	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	585 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30		16.51 mm	Not Qualified	2359296 bit			150 ns
KM41256AZ-15	Samsung	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	65 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	TIN LEAD	ZIG-ZAG	R-PZIP-T16	3		Not Qualified	262144 bit	e0		150 ns
KM41256-15P	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	TIN LEAD	DUAL	R-PDIP-T16	3		Not Qualified	262144 bit	e0		150 ns
KMM59256AN10	Samsung	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	175 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30		16.51 mm	Not Qualified	2359296 bit			100 ns
KM41256-10P	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	TIN LEAD	DUAL	R-PDIP-T16	3		Not Qualified	262144 bit	e0		100 ns
KM41256-12PJ	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	TIN LEAD	QUAD	R-PQCC-J18	3		Not Qualified	262144 bit	e0		120 ns
KM4164A15N	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16			Not Qualified	65536 bit	e0		150 ns
KM41464AZ-10	Samsung	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	TIN LEAD	ZIG-ZAG	R-PZIP-T20	3		Not Qualified	262144 bit	e0		100 ns
KM41256AP-12	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	75 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	TIN LEAD	DUAL	R-PDIP-T16	3		Not Qualified	262144 bit	e0		120 ns
KM41256-15PJ	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	TIN LEAD	QUAD	R-PQCC-J18	3		Not Qualified	262144 bit	e0		150 ns
KM41464AZ-12	Samsung	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	75 mA	65536 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	TIN LEAD	ZIG-ZAG	R-PZIP-T20	3		Not Qualified	262144 bit	e0		120 ns
KMM59256-12	Samsung	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	675 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30		16.51 mm	Not Qualified	2359296 bit			120 ns
KM4164A12Z	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16			Not Qualified	65536 bit	e0		120 ns
KMM59256AN8	Samsung	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	205 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30		16.51 mm	Not Qualified	2359296 bit			80 ns
KM41256-12P	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	TIN LEAD	DUAL	R-PDIP-T16	3		Not Qualified	262144 bit	e0		120 ns
KMM48256-12	Samsung	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY	NO	MOS		600 mA	262144 words	COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	Tin/Lead (Sn/Pb)	SINGLE			16.51 mm	Not Qualified	2097152 bit	e0		120 ns
KM4164A20Z	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16			Not Qualified	65536 bit	e0		200 ns
KMM58256-15	Samsung	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	520 mA	262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	R-PSMA-N30			Not Qualified	2097152 bit			150 ns
KMM58256-12	Samsung	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	600 mA	262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	R-PSMA-N30			Not Qualified	2097152 bit			120 ns
KM4164A15Z	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16			Not Qualified	65536 bit	e0		150 ns
KMM511024-15	Samsung	PAGE MODE DRAM	COMMERCIAL	22	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	NO LEAD	78 mA	1048576 words	SEPARATE			1	MICROELECTRONIC ASSEMBLY	SIM22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		SINGLE	R-PSMA-N22			Not Qualified	1048576 bit			150 ns
KM41256AJ-12	Samsung	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND	75 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	TIN LEAD	QUAD	R-PQCC-J18	3		Not Qualified	262144 bit	e0		120 ns
KMM411024-15	Samsung	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY	NO	MOS		78 mA	1048576 words	SEPARATE			1		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	SINGLE				Not Qualified	1048576 bit	e0		150 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.