RLDRAM3 DRAM 19

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
MT44K32M36RB-083F	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1340 mA	33554432 words	2,4,8	NO		1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX36	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1204.8 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-107EIT:BTR	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2565 mA	33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX18	32M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH				.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-107EIT:ATR	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1070 mA	33554432 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX36	32M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH				.225 Amp	2,4,8	13.5 mm
MT44K64M18RB-093E	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1095 mA	67108864 words	2,4,8	NO		1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	64MX18	64M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1075.2 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-093E	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1140 mA	33554432 words	2,4,8	NO		1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX36	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1075.2 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-107E	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1070 mA	33554432 words	2,4,8	NO		1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX36	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	934.5 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-125E:ATR	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	800 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4,8	13.5 mm
MT44K64M18RB-083F	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1260 mA	67108864 words	2,4,8	NO		1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	64MX18	64M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1204.8 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-093E:BTR	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2620 mA	33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	1075.2 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K64M18RB-107E	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	10015 mA	67108864 words	2,4,8	NO		1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	64MX18	64M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	934.5 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-093E:ATR	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1140 mA	33554432 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX36	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	1075.2 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-107E:BTR	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2565 mA	33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K64M18RB-093F	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1160 mA	67108864 words	2,4,8	NO		1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	64MX18	64M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1075.2 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.225 Amp	2,4,8	13.5 mm
MT44K16M36RB-093F:BTR	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	1075.2 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-107E:ATR	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1070 mA	33554432 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX36	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-093F	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1210 mA	33554432 words	2,4,8	NO		1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX36	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1075.2 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-083E	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1270 mA	33554432 words	2,4,8	NO		1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	32MX36	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1204.8 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.225 Amp	2,4,8	13.5 mm
MT44K64M18RB-083E	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1190 mA	67108864 words	2,4,8	NO		1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	64MX18	64M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1204.8 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.225 Amp	2,4,8	13.5 mm
MT44K16M36RB-107E:BTR	Micron Technology	RLDRAM3	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2665 mA	16777216 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel	16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.