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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Interleaved Burst Length	Length
EDW4032BABG-70-F-D	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170	1.3905 V	1.2 mm	12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY					14 mm
EDW2032BABG-40-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel	3-STATE	64MX32	64M	0 Cel		BOTTOM		R-PBGA-B170				Not Qualified	2147483648 bit						8
EDW4032BABG-70-F-R	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170	1.3905 V	1.2 mm	12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY					14 mm
EDW4032BABG-70-F	Micron Technology	DDR5 DRAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170	1.3905 V	1.2 mm	12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		14 mm
EDW2032BBBG-7A-F	Micron Technology	DDR5 DRAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		YES		1.6		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			64MX8	64M			BOTTOM	1	R-PBGA-B170	1.648 V	1.2 mm	12 mm		536870912 bit	1.552 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V		NOT SPECIFIED	NOT SPECIFIED		14 mm
EDW1032BBBG-60-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		33554432 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B170				Not Qualified	1073741824 bit						8
EDW2032BBBG-40-F	Micron Technology	DDR5 DRAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		YES		1.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			64MX32	64M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B170	1.545 V	1.2 mm	12 mm		2147483648 bit	1.455 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V	e1				14 mm
EDW2032BABG-50-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel	3-STATE	64MX32	64M	0 Cel		BOTTOM		R-PBGA-B170				Not Qualified	2147483648 bit						8
MT51J256M32HF-70:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B170	1.3905 V	1.2 mm	12 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					14 mm
EDW1032BABG-60-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		33554432 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B170				Not Qualified	1073741824 bit						8
EDW2032BBBG-6A-F	Micron Technology	DDR5 DRAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			64MX8	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B170	1.545 V	1.2 mm	12 mm		536870912 bit	1.455 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V	e1				14 mm
EDW2032BBBG-50-F	Micron Technology	DDR5 DRAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		YES		1.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			64MX32	64M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B170	1.545 V	1.2 mm	12 mm		2147483648 bit	1.455 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V	e1				14 mm
EDW1032BBBG-50-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		33554432 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B170				Not Qualified	1073741824 bit						8
EDW4032BABG-80-F-D	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170	1.3905 V	1.2 mm	12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY					14 mm
EDW4032BABG-60-F-D	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170	1.3905 V	1.2 mm	12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY					14 mm
MT51J256M32HF-80:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B170	1.3905 V	1.2 mm	12 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					14 mm
EDW2032BBBG-60-F	Micron Technology	DDR5 DRAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		YES		1.6		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			64MX32	64M			BOTTOM	1	R-PBGA-B170	1.648 V	1.2 mm	12 mm		2147483648 bit	1.552 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V		NOT SPECIFIED	NOT SPECIFIED		14 mm
EDW2032BBBG-70-F	Micron Technology	DDR5 DRAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words		YES		1.6		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			64MX32	64M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B170	1.648 V	1.2 mm	12 mm		2147483648 bit	1.552 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V	e1				14 mm
EDW4032BABG-60-F-R	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170	1.3905 V	1.2 mm	12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY					14 mm
EDW1032BBBG-70-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		33554432 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B170				Not Qualified	1073741824 bit						8
EDW1032BABG-40-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		33554432 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B170				Not Qualified	1073741824 bit						8
EDW1032BBBG-40-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		33554432 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B170				Not Qualified	1073741824 bit						8
EDW2032BABG-60-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel	3-STATE	64MX32	64M	0 Cel		BOTTOM		R-PBGA-B170				Not Qualified	2147483648 bit						8
EDW1032BABG-50-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		33554432 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B170				Not Qualified	1073741824 bit						8
EDW4032BABG-60-F	Micron Technology	DDR5 DRAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170	1.3905 V	1.2 mm	12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		14 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.