200 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M470L1714BT0-LB0	Samsung	DDR1 DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1820 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	1	2.7 V		133 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.34 Amp		.75 ns
M470L1624BT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH						.8 ns
M470T3354BZ0-CD5	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1560 mA	33554432 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	32MX64	32M	0 Cel	TIN SILVER COPPER	ZIG-ZAG	1	R-XZMA-N200	3	1.9 V		267 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					.5 ns
M470T2953EZ3-CE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	3	1.9 V		333 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.128 Amp		.45 ns
M470L2923DV0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3240 mA	134217728 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200	3	2.7 V		166 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH			260	.08 Amp		.7 ns
M470L3324BT0-CCC	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	33554432 words	YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N200		2.7 V		200 MHz		Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH	e0					.65 ns
M470T6464DZ3-LF7	Samsung	SYNCHRONOUS DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V		400 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.032 Amp		.4 ns
M470T2953CZ0-LE7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V		400 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.4 ns
M470T2864DZ3-CD5	Samsung	SYNCHRONOUS DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1160 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V		267 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.12 Amp		.5 ns
M470L3324BT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N200		2.7 V		133 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e0					.75 ns
M470T5669AZ0-LE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2760 mA	268435456 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		333 MHz		Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH				.128 Amp		.45 ns
M470L1714DT0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1400 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		133 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.02 Amp		.75 ns
M470L1624FT0-LCC	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	16777216 words	YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V		200 MHz		Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH						.65 ns
M470L6524BN0-CB3	Samsung	CACHE DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1820 mA	67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200	1			166 MHz		Not Qualified	4294967296 bit								.7 ns
M470T6554EZ3-CE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	3	1.9 V		333 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH			260	.064 Amp		.45 ns
M485L6523BU0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.7 ns
M470T6554EZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1360 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	3	1.9 V		400 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH			260	.064 Amp		.4 ns
M470T3354CZ3-LCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	33554432 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	32MX64	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH						.6 ns
M470T6464DZ3-CF7	Samsung	SYNCHRONOUS DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V		400 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.06 Amp		.4 ns
M485L3324CU0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1900 mA	33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V		166 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.03 Amp		.7 ns
M470T2864QH3-LE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V	3.8 mm	333 MHz	30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.064 Amp	67.6 mm	.45 ns
M485L6523CU0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2930 mA	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V		133 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.05 Amp		.75 ns
M470T2864QH3-CF7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V	3.8 mm	400 MHz	30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.12 Amp	67.6 mm	.4 ns
M470L1624BT0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
M470T5663RZ3-CE6	Samsung	DDR2 DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2400 mA	268435456 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V		333 MHz		Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH			260	.24 Amp		.4 ns
M470L0914DT0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1380 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		166 MHz		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.012 Amp		.7 ns
KMM378S1620BT-G0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2430 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N200		3.6 V		100 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.02 Amp		7 ns
M470L2923BV0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	2.7 V				Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
M470L1714DT0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		166 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.024 Amp		.7 ns
M470T2864DZ3-LCC	Samsung	SYNCHRONOUS DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1140 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V		200 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.064 Amp		.6 ns
M470L3324BT0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N200		2.7 V		133 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e0					.75 ns
M470L6524DU0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1560 mA	67108864 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V		133 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		.75 ns
MN18R1628EF0-CT9	Samsung	RAMBUS DRAM MODULE		200			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		134217728 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M			UNSPECIFIED	1	R-XXMA-X200		2.63 V				Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
M485L3324BT0-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		166 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH				.025 Amp		.7 ns
M470L6423DN0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3040 mA	67108864 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		166 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH						.7 ns
M470T3354BZ3-LCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	960 mA	33554432 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	32MX64	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH						.6 ns
M470L6423EN0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2680 mA	67108864 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		166 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH						.7 ns
M470L3324CU0-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V		166 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.7 ns
MT9HTF6472RHZ-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm			Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4				67.6 mm
MT5VDDT1672HG-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH		30	235			.9 ns
MT9VDDT6472HIG-26A	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3150 mA	67108864 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	4831838208 bit						.045 Amp		.75 ns
MT9VDDT6472PHY-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4					.75 ns
MT8VDDT1664HDG-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1452 mA	16777216 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	1073741824 bit						.024 Amp		.75 ns
MT5VDDT1672HG-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			16777216 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	1207959552 bit						.02 Amp		.75 ns
MT8VDDT1664HY-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2200 mA	16777216 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			125 MHz		Not Qualified	1073741824 bit			e3			.024 Amp		.8 ns
MT16VDDF6464HG-40B	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4160 mA	67108864 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.064 Amp		.7 ns
MT9VDDT1672HY-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2925 mA	16777216 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	1207959552 bit								.75 ns
MT4HTF3264HY-53E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1300 mA	33554432 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200				267 MHz		Not Qualified	2147483648 bit					260	.02 Amp		.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.