BGA DRAM 903

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
MT47H256M8-3:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY				85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V		Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT46H32M32LFMB-75IT:B	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	152	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY				85 Cel		32MX32	32M	-40 Cel		BOTTOM	1	R-PBGA-B152		1.95 V			1073741824 bit	1.7 V	AUTO/SELF REFRESH						6 ns
MT46H16M16LFBF-6AT:H	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	85 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA60,9X10,32	DRAMs	.8 mm	105 Cel	3-STATE	16MX16	16M	-40 Cel		BOTTOM	1	R-PBGA-B60		1.95 V	166 MHz	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16	5 ns
MT46V64M4FJ-8LIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			125 MHz	Not Qualified	268435456 bit			e0				2,4,8
MT47H512M4-37E:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY				85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V		Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT46V16M8FJ-6T	Micron Technology	DDR1 DRAM	COMMERCIAL	60	BGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		355 mA	16777216 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			167 MHz	Not Qualified	134217728 bit			e0			.003 Amp	2,4,8	.7 ns
MT46H32M32LFMB-5:B	Micron Technology	LPDDR1 DRAM	COMMERCIAL	152	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY				70 Cel		32MX32	32M	0 Cel		BOTTOM	1	R-PBGA-B152		1.95 V			1073741824 bit	1.7 V	AUTO/SELF REFRESH						5 ns
MT46V64M4BG-6TIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	-40 Cel		BOTTOM		R-PBGA-B60			167 MHz	Not Qualified	268435456 bit					260		2,4,8
MT46H4M32LFB5-75AT:K	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		1.8		32	GRID ARRAY				105 Cel		4MX32	4M	-40 Cel		BOTTOM	1	R-PBGA-B90		1.95 V			134217728 bit	1.7 V	AUTO/SELF REFRESH						6 ns
MT46V32M4BJ-6TIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		355 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B60			167 MHz	Not Qualified	134217728 bit						.003 Amp	2,4,8	.7 ns
MT47R128M8HQ-3:G	Micron Technology	DDR2 DRAM	OTHER	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	4,8	YES	COMMON	1.55	1.55	8	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	333 MHz	Not Qualified	1073741824 bit	1.5 V	SELF CONTAINED REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	450 ns
MT46H32M32LFMB-75AT:B	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	152	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY				105 Cel		32MX32	32M	-40 Cel		BOTTOM	1	R-PBGA-B152		1.95 V			1073741824 bit	1.7 V	AUTO/SELF REFRESH						6 ns
MT46V16M16FG-75ZHIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			133 MHz	Not Qualified	268435456 bit			e0				2,4,8
MT46V32M8FJ-8LIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			125 MHz	Not Qualified	268435456 bit			e0			.004 Amp	2,4,8
MT46V16M8BJ-6TL	Micron Technology	DDR1 DRAM	COMMERCIAL	60	BGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		355 mA	16777216 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX8	16M	0 Cel		BOTTOM		R-PBGA-B60			167 MHz	Not Qualified	134217728 bit						.003 Amp	2,4,8	.7 ns
MT46H8M16LFBF-5AT:K	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		16	GRID ARRAY				105 Cel		8MX16	8M	-40 Cel		BOTTOM	1	R-PBGA-B60		1.95 V			134217728 bit	1.7 V	AUTO/SELF REFRESH						5 ns
MT46H32M32LGMB-75:B	Micron Technology	LPDDR1 DRAM	COMMERCIAL	152	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY				70 Cel		32MX32	32M	0 Cel		BOTTOM	1	R-PBGA-B152		1.95 V			1073741824 bit	1.7 V	AUTO/SELF REFRESH						6 ns
MT47H256M8-25E:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY				85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V		Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT40A8G4CLU-075H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4	GRID ARRAY				95 Cel		8GX4	8G	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V			34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT46V32M4FJ-6TL	Micron Technology	DDR1 DRAM	COMMERCIAL	60	BGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		355 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			167 MHz	Not Qualified	134217728 bit			e0			.003 Amp	2,4,8	.7 ns
MT47H256M8-37E:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY				85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V		Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT46V32M16BN-6LIT:D	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		405 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		166 MHz	Not Qualified	536870912 bit			e3			.005 Amp	2,4,8	.7 ns
MT46V32M4FJ-6TIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		355 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX4	32M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			167 MHz	Not Qualified	134217728 bit			e0			.003 Amp	2,4,8	.7 ns
MT46V16M16FG-6HIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			167 MHz	Not Qualified	268435456 bit			e0				2,4,8
MT46V16M8BJ-6TIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		355 mA	16777216 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B60			167 MHz	Not Qualified	134217728 bit						.003 Amp	2,4,8	.7 ns
MT46V16M16FG-75LHIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			133 MHz	Not Qualified	268435456 bit			e0				2,4,8
MT46V64M4FJ-8L	Micron Technology	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			125 MHz	Not Qualified	268435456 bit			e0				2,4,8
MT46V16M16FG-75ELHIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			133 MHz	Not Qualified	268435456 bit			e0				2,4,8
MT47H512M4-25E:G	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY				85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V		Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT46H8M16LFBF-54AT:K	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		16	GRID ARRAY				105 Cel		8MX16	8M	-40 Cel		BOTTOM	1	R-PBGA-B60		1.95 V			134217728 bit	1.7 V	AUTO/SELF REFRESH						5 ns
MT47H256M8-25:G	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY				85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V		Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT46V32M16FN-6:D	Micron Technology	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		405 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60	1		166 MHz	Not Qualified	536870912 bit						.005 Amp	2,4,8	.7 ns
MT46H32M32LGMB-54:B	Micron Technology	LPDDR1 DRAM	COMMERCIAL	152	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY				70 Cel		32MX32	32M	0 Cel		BOTTOM	1	R-PBGA-B152		1.95 V			1073741824 bit	1.7 V	AUTO/SELF REFRESH						5 ns
MT46H32M32LGMB-54AIT:B	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	152	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY				85 Cel		32MX32	32M	-40 Cel		BOTTOM	1	R-PBGA-B152		1.95 V			1073741824 bit	1.7 V	AUTO/SELF REFRESH						5 ns
MT46V64M4BG-6T	Micron Technology	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	0 Cel		BOTTOM		R-PBGA-B60			167 MHz	Not Qualified	268435456 bit					260		2,4,8
MT44K32M36RCT-125E	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY						32MX36	32M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	X-PBGA-B168					1207959552 bit			e1	30	260
MT44K64M18RCT-125	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY						64MX18	64M		TIN SILVER COPPER	BOTTOM	1	X-PBGA-B168					1207959552 bit			e1
MT47H64M16HR-25EXIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	ASYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84			400 MHz	Not Qualified	1073741824 bit		SELF REFRESH		30	260	.007 Amp	4,8	.4 ns
MT46V32M8FJ-8L	Micron Technology	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			125 MHz	Not Qualified	268435456 bit			e0			.004 Amp	2,4,8
MT46V32M8FG-75HIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		365 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			133 MHz	Not Qualified	268435456 bit			e0			.004 Amp	2,4,8
MT46V64M4FJ-8IT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			125 MHz	Not Qualified	268435456 bit			e0				2,4,8
MT46H8M32LFB5-54AT:H	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY				105 Cel		8MX32	8M	-40 Cel		BOTTOM	1	R-PBGA-B90		1.95 V			268435456 bit	1.7 V	AUTO/SELF REFRESH						5 ns
MT46V32M16FN-5BIT:D	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		480 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM		R-PBGA-B60	1		200 MHz	Not Qualified	536870912 bit						.005 Amp	2,4,8	.7 ns
MT40A8G4CLU-075H:ETR	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4	GRID ARRAY				95 Cel		8GX4	8G	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V			34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT47H64M16HR-25EXIT:HTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	ASYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY				85 Cel		64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V			1073741824 bit	1.7 V	SELF REFRESH	e1
MT46V32M8FG-75LHIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		365 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			133 MHz	Not Qualified	268435456 bit			e0			.004 Amp	2,4,8
MT47H512M4-37E:G	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY				85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V		Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT41J128M16HA-15EXIT:D	Micron Technology	DDR3 DRAM		96	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY						128MX16	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V			2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.