BGA DRAM 903

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Interleaved Burst Length	Length	Maximum Access Time
MT41K256M16TW-107XIT:P	Micron Technology	DDR3L DRAM		96	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY						256MX16	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V				4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1
MT47H64M16NF-25E:MTR	Micron Technology	DDR2 DRAM	OTHER	84	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY				85 Cel		64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V				1073741824 bit	1.7 V	SELF REFRESH	e1	30	260
MT41K256M16HA-125XIT:E	Micron Technology	DDR3L DRAM		96	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY						256MX16	256M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V				4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260
K4F6E3S4HM-MGCJ	Samsung Electro-mechanics	LPDDR4 DRAM	OTHER	200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	ASYNCHRONOUS		536870912 words				1.1		32	GRID ARRAY				85 Cel		512MX32	512M	-25 Cel		BOTTOM		R-PBGA-B200						17179869184 bit
D2516ECMDXGJD-U	Kingston Technology Company	DDR3L DRAM	OTHER	96	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY				95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96						4294967296 bit		SELF REFRESH
MT53D1024M32D4DT-053AAT:D	Micron Technology	DDR4 DRAM			BGA		UNSPECIFIED	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words						32	GRID ARRAY						1GX32	1G			BOTTOM	1	X-PBGA-B						34359738368 bit				NOT SPECIFIED	NOT SPECIFIED
W3H32M64E-533SBI	Microsemi	DDR2 DRAM	INDUSTRIAL	208	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		64	GRID ARRAY				85 Cel		32MX64	32M	-40 Cel		BOTTOM	1	R-PBGA-B208		1.9 V			Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		30	225			.65 ns
W3H64M72E-533SBI	Microsemi	DDR2 DRAM	INDUSTRIAL	208	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1750 mA	67108864 words		YES	COMMON	1.8	1.8	72	GRID ARRAY	BGA208,11X19,40	DRAMs	1 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		BOTTOM	1	R-PBGA-B208		1.9 V	267 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH		30	225			.5 ns
M65KG256AF8W6T	STMicroelectronics	DDR1 DRAM	COMMERCIAL EXTENDED	149	BGA		UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY				85 Cel		16MX16	16M	-30 Cel		BOTTOM	1	X-XBGA-B149		1.9 V			Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH						6 ns
HYB25D512800AFL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY				70 Cel		64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25D512400ACL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		2.5		4	GRID ARRAY				70 Cel		128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25R64160C-653	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			4194304 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm		3-STATE	4MX16	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			600 MHz		Not Qualified	67108864 bit			e0
HYB25D512160AF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY				70 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25R72180C-750	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm		3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			711 MHz		Not Qualified	75497472 bit			e0
HYB25D512160AFL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY				70 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25R72180C-840	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm		3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			800 MHz		Not Qualified	75497472 bit			e0
HYB25D512800AF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY				70 Cel		64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25D512800ACL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY				70 Cel		64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25R72180C-645	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm		3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			600 MHz		Not Qualified	75497472 bit			e0
HYB25D512800AC-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY				70 Cel		64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25R64160C-845	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			4194304 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm		3-STATE	4MX16	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			800 MHz		Not Qualified	67108864 bit			e0
HYB25D512400AF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		2.5		4	GRID ARRAY				70 Cel		128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25D512160AC-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY				70 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25R64160C-840	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			4194304 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm		3-STATE	4MX16	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			800 MHz		Not Qualified	67108864 bit			e0
HYB25R72180C-745	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm		3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			711 MHz		Not Qualified	75497472 bit			e0
HYB25D512160ACL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY				70 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25R72180C-845	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm		3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			800 MHz		Not Qualified	75497472 bit			e0
HYB25D512400AFL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		2.5		4	GRID ARRAY				70 Cel		128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25D512400AC-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		2.5		4	GRID ARRAY				70 Cel		128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		18 mm	.7 ns
HYB25R72180C-653	Infineon Technologies	RAMBUS DRAM		54	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA54,8X9,40/32	DRAMs	.8 mm		3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54			600 MHz		Not Qualified	75497472 bit			e0
S27KS0642GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words				1.8		1	GRID ARRAY				125 Cel		64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	200 MHz			67108864 bit	1.7 V							35 ns
S70KS1282GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words				1.8		1	GRID ARRAY				125 Cel		128MX1	128M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	200 MHz			134217728 bit	1.7 V							35 ns
S70KS1282GABHM020	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words				1.8		1	GRID ARRAY				125 Cel		128MX1	128M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	200 MHz			134217728 bit	1.7 V							35 ns
S70KL1282GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words				3		1	GRID ARRAY				125 Cel		128MX1	128M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	200 MHz			134217728 bit	2.7 V							35 ns
S27KL0642GABHM020	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words				3		1	GRID ARRAY				125 Cel		64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	200 MHz			67108864 bit	2.7 V							35 ns
S27KS0642GABHM020	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words				1.8		1	GRID ARRAY				125 Cel		64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	200 MHz			67108864 bit	1.7 V							35 ns
S27KL0642GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words						1	GRID ARRAY				125 Cel		64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	200 MHz			67108864 bit	2.7 V							35 ns
S70KL1282GABHM020	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words			COMMON	3		1	GRID ARRAY				125 Cel		128MX1	128M	-40 Cel		BOTTOM	1	R-PBGA-B240	3	3.6 V	200 MHz			134217728 bit	2.7 V							35 ns
TC59LM905AMG-50	Toshiba	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			67108864 words	2,4		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	536870912 bit						2,4		.65 ns
TC59LM813AMG-60	Toshiba	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			33554432 words	2,4		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60			166 MHz		Not Qualified	536870912 bit						2,4		.85 ns
TC59LM913AMG-60	Toshiba	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			33554432 words	2,4		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60			166 MHz		Not Qualified	536870912 bit						2,4		.85 ns
TC59LM905AMG-55	Toshiba	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			67108864 words	2,4		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60			182 MHz		Not Qualified	536870912 bit						2,4		.75 ns
TC59LM805AMG-60	Toshiba	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			67108864 words	2,4		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60			166 MHz		Not Qualified	536870912 bit						2,4		.85 ns
TC59LM818DMGI-40	Toshiba	DDR1 DRAM	INDUSTRIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			16777216 words	2,4		COMMON		1.8,2.5	18	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel		BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	301989888 bit						2,4		.6 ns
TC59LM805AMG-50	Toshiba	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			67108864 words	2,4		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	536870912 bit						2,4		.65 ns
TC59LM818DMBI-40	Toshiba	DDR1 DRAM	INDUSTRIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			16777216 words	2,4		COMMON		1.8,2.5	18	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	301989888 bit			e0			2,4		.6 ns
TC59LM913AMG-55	Toshiba	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			33554432 words	2,4		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60			182 MHz		Not Qualified	536870912 bit						2,4		.75 ns
TC59LM813AMG-50	Toshiba	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			33554432 words	2,4		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	536870912 bit						2,4		.65 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.