BGA DRAM 903

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
UPD488448FF-C71-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			711 MHz		Not Qualified	134217728 bit			e0
UPD48288236AFF-E24-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8		COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit				NOT SPECIFIED	NOT SPECIFIED
UPD48288218FF-EF50-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	16777216 words	2,4,8		COMMON		1.5,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit
UPD48288209AFF-E24-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			COMMON	1.8	1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				2,4,8	18.5 mm
UPD48288209AFF-E24-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words			COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit				NOT SPECIFIED	NOT SPECIFIED		2,4,8
UPD48288209FF-EF50-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	33554432 words			COMMON		1.5,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288236AFF-E18-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8		COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			533 MHz		Not Qualified	301989888 bit				NOT SPECIFIED	NOT SPECIFIED
UPD48288218FF-EF33-DW1-A	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8		COMMON		1.5,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit
UPD488385-C80-50BF1	Renesas Electronics	RAMBUS DRAM		74	BGA			PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs				3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM					800 MHz		Not Qualified	75497472 bit			e0
UPD48288236FF-E25-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1030 mA	8388608 words	2,4		COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD48288218AFF-E25-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8		COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD48288218AFF-E24-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8		COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit				NOT SPECIFIED	NOT SPECIFIED
UPD48288118FF-E50-DW1	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	16777216 words			SEPARATE		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit						.048 Amp	2,4,8		.4 ns
UPD48288209AFF-E33-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words			COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288118FF-EF33-DW1	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		840 mA	16777216 words			SEPARATE		1.5,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit						.048 Amp	2,4,8		.35 ns
UPD488488FB-C60-53-DP1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			600 MHz		Not Qualified	150994944 bit			e0
UPD488448FB-C71-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			711 MHz		Not Qualified	134217728 bit			e0
UPD48288236FF-E50-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		600 mA	8388608 words	2,4		COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit
UPD488448FF-C80-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			800 MHz		Not Qualified	134217728 bit			e0
UPD48288209FF-E25-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	33554432 words			COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288209FF-EF33-DW1-A	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words			COMMON		1.5,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit							2,4,8
UPD488448FB-C80-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			800 MHz		Not Qualified	134217728 bit			e0
UPD488448FB-C80-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			800 MHz		Not Qualified	134217728 bit			e0
UPD488448FF-C71-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			711 MHz		Not Qualified	134217728 bit			e0
UPD48288118FF-EF50-DW1-A	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	16777216 words			SEPARATE		1.5,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit						.048 Amp	2,4,8		.4 ns
UPD488448FB-C60-53-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			600 MHz		Not Qualified	134217728 bit			e0
UPD48288209FF-EF50-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	33554432 words			COMMON		1.5,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288236FF-EF50-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		600 mA	8388608 words	2,4		COMMON		1.5,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit
UPD48288236FF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		900 mA	8388608 words	2,4		COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit
UPD488385-C60-45BF1	Renesas Electronics	RAMBUS DRAM		74	BGA			PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs				3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM					600 MHz		Not Qualified	75497472 bit			e0
HM5225645FBP-B60	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	108	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3.3		64	GRID ARRAY			1.27 mm	70 Cel			4MX64	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	3.6 V	2.1 mm		14 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1					22 mm	6 ns
UPD48288236FF-EF25-DW1-A	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4		COMMON		1.5,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD488488FB-C80-45-DP1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			800 MHz		Not Qualified	150994944 bit			e0
UPD488488FB-C71-45-DP2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			711 MHz		Not Qualified	150994944 bit			e0
UPD488385-C60-53BF1	Renesas Electronics	RAMBUS DRAM		74	BGA			PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs				3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM					600 MHz		Not Qualified	75497472 bit			e0
UPD488448FF-C60-53-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			600 MHz		Not Qualified	134217728 bit			e0
UPD48288209FF-E50-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	33554432 words			COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288209FF-E25-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	33554432 words			COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288118FF-EF50-DW1	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	16777216 words			SEPARATE		1.5,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit						.048 Amp	2,4,8		.4 ns
UPD48288118FF-EF25-DW1	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	16777216 words			SEPARATE		1.5,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit						.048 Amp	2,4,8		.3 ns
UPD48288218AFF-E25-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8		COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD48288236FF-EF50-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		600 mA	8388608 words	2,4		COMMON		1.5,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit
UPD48288236FF-EF25-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1030 mA	8388608 words	2,4		COMMON		1.5,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD488385-C80-40BF1	Renesas Electronics	RAMBUS DRAM		74	BGA			PLASTIC/EPOXY		YES		CMOS	BALL			4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA74(UNSPEC)	DRAMs				3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM					800 MHz		Not Qualified	75497472 bit			e0
UPD48288209FF-EF33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		840 mA	33554432 words			COMMON		1.5,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288118FF-E33-DW1	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		840 mA	16777216 words			SEPARATE		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit						.048 Amp	2,4,8		.35 ns
UPD48288218AFF-E18-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8		COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN BISMUTH	BOTTOM		R-PBGA-B144			533 MHz		Not Qualified	301989888 bit			e6
UPD48288236FF-EF33-DW1-A	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4		COMMON		1.5,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.