BGA DRAM 903

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4H511638F-HPB30	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	32MX16	32M	-40 Cel		BOTTOM		R-PBGA-B60				166 MHz		Not Qualified	536870912 bit					.005 Amp	2,4,8		.7 ns
K4Y50084UE-JCA2	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		810 mA	67108864 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3		.04 Amp			36 ns
K4H511638B-ZCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		450 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	536870912 bit				260	.005 Amp	2,4,8		.65 ns
K4H560438J-HLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		230 mA	67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	268435456 bit			e3		.003 Amp	2,4,8		.7 ns
K4R271669B-NCG6T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	134217728 bit			e0
K4R271669B-MCK8T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	134217728 bit			e0
K4H511638F-HCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		400 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.65 ns
K4H510838D-ZPB3T	Samsung	DDR1 DRAM	AUTOMOTIVE	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	125 Cel		3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4H510438C-ZLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4H560438J-HCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		230 mA	67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	268435456 bit			e3		.003 Amp	2,4,8		.7 ns
K4H560838E-ZLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel		BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit				260	.003 Amp	2,4,8		.7 ns
K4C89183AF-GCG70	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY				70 Cel			16MX18	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V				Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					.5 ns
K4H561638H-ZCB3O	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		330 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel		BOTTOM		R-PBGA-B60				166 MHz		Not Qualified	268435456 bit					.003 Amp	2,4,8		.7 ns
K4C89093AF-GCF5	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4	YES	COMMON	2.5	1.8,2.5	9	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel		3-STATE	32MX9	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V		250 MHz		Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0			2,4		.6 ns
K4Y54044UF-JCC3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	64MX4	64M			BOTTOM		R-PBGA-B104				400 MHz		Not Qualified	268435456 bit					.34 Amp			53.6 ns
K4H510438G-HCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		210 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.7 ns
K4H511638C-ZIB0T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		345 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			133 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.75 ns
K4H560838E-ZCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel		BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit				260	.003 Amp	2,4,8
K4H561638J-HLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	268435456 bit			e3		.003 Amp	2,4,8		.7 ns
K4H510438D-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		385 mA	134217728 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.65 ns
K4H511638G-HCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		230 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4Y50164UE-JCB3	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1150 mA	33554432 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B100	3					Not Qualified	536870912 bit				260	.04 Amp			35 ns
K4C89183AF-GIF60	Samsung	DDR1 DRAM		60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY							16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V				Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					.5 ns
K4H510438C-ZLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4H510438G-HCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		210 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.7 ns
K4H560438H-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	67108864 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8		.65 ns
K4H510838D-ZIB3T	Samsung	DDR1 DRAM	AUTOMOTIVE	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	125 Cel		3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4Y54084UF-JCC4	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX8	32M			BOTTOM		R-PBGA-B104				500 MHz		Not Qualified	268435456 bit					.34 Amp			53.6 ns
K4R441869B-MCK8T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	150994944 bit			e0
K4F6E304HB-MGCJ0	Samsung	LPDDR4 DRAM		200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	ASYNCHRONOUS		536870912 words						32	GRID ARRAY							512MX32	512M			BOTTOM	1	R-PBGA-B200							17179869184 bit
K4H510838B-ZCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	536870912 bit				260	.005 Amp	2,4,8		.65 ns
K4H560838H-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	33554432 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8
K4H510838G-HCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.7 ns
K4B4G1646B-HYK00	Samsung	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	ASYNCHRONOUS		268435456 words				1.35		16	GRID ARRAY							256MX16	256M			BOTTOM		R-PBGA-B78							4294967296 bit
K4H510838C-ZLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4H511638J-BIB3T	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3	260	.005 Amp	2,4,8		.7 ns
K4T1G084QM-ZCD50	Samsung	DDR2 DRAM	OTHER	68	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words				1.8		8	GRID ARRAY				95 Cel			128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2	1.9 V	1.2 mm		11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO REFRESH	e1				21.7 mm	.5 ns
K4Y50024UE-JCB3	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		910 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	256MX2	256M	0 Cel		BOTTOM		R-PBGA-B100	3					Not Qualified	536870912 bit				260	.04 Amp			35 ns
K4R271669B-NCK8T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	134217728 bit			e0
K4T1G084QM-ZCCC0	Samsung	DDR2 DRAM	OTHER	68	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words				1.8		8	GRID ARRAY				95 Cel			128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2	1.9 V	1.2 mm		11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO REFRESH	e1				21.7 mm	.6 ns
K4H511638C-ZLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4H510438G-HLCC0	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.65 ns
K4C89093AF-GCF6	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4	YES	COMMON	2.5	1.8,2.5	9	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel		3-STATE	32MX9	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V		333 MHz		Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0			2,4		.5 ns
K4H510438G-HCB30	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		210 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.7 ns
K4C89183AF-ACF5	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		400 mA	16777216 words	2,4		COMMON		1.8,2.5	18	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel		3-STATE	16MX18	16M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60				250 MHz		Not Qualified	301989888 bit			e0			2,4		.6 ns
K4H510438F-HLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		385 mA	134217728 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.65 ns
K4Y54084UF-JCC3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX8	32M			BOTTOM		R-PBGA-B104				400 MHz		Not Qualified	268435456 bit					.34 Amp			53.6 ns
K4Y50024UE-JCC4	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1070 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3		.04 Amp			28 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.