BGA DRAM 903

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4Y50024UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		820 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1				Not Qualified	536870912 bit			e3		.025 Amp			36 ns
K4H510838C-ZCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3		166 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.7 ns
K4C89093AF-ACF6	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words	2,4		COMMON		1.8,2.5	9	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel		3-STATE	32MX9	32M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			333 MHz		Not Qualified	301989888 bit			e0			2,4		.5 ns
K4H561638H-ZCCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8		.65 ns
K4H560838E-ZCB0	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel		BOTTOM		R-PBGA-B60	3		133 MHz		Not Qualified	268435456 bit				260	.003 Amp	2,4,8
K4Y54044UF-JCB3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	64MX4	64M			BOTTOM		R-PBGA-B104			400 MHz		Not Qualified	268435456 bit					.34 Amp			53.6 ns
K4H561638H-ZCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		330 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3		166 MHz		Not Qualified	268435456 bit			e1	260	.003 Amp	2,4,8		.7 ns
K4C89363AF-GCF6	Samsung	DDR1 DRAM	COMMERCIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	70 Cel		3-STATE	8MX36	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144		2.625 V	333 MHz		Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0			2,4		.5 ns
K4H561638J-HICC	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8		.65 ns
K4Y54044UF-JCA2	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	64MX4	64M			BOTTOM		R-PBGA-B104			300 MHz		Not Qualified	268435456 bit					.34 Amp			53.6 ns
K4H510838C-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		385 mA	67108864 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		200 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.65 ns
K4F6E304HB-MGCH0	Samsung	DDR4 DRAM	OTHER	200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	ASYNCHRONOUS		536870912 words				1.8		32	GRID ARRAY				85 Cel			512MX32	512M	-25 Cel		BOTTOM	1	R-PBGA-B200						17179869184 bit
K4H561638J-HIB3	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		167 MHz		Not Qualified	268435456 bit			e3		.003 Amp	2,4,8		.7 ns
K4H510838D-ZIB0T	Samsung	DDR1 DRAM	AUTOMOTIVE	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	125 Cel		3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		133 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.75 ns
K4H560838E-GLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	33554432 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel		BOTTOM		R-PBGA-B60	3		200 MHz		Not Qualified	268435456 bit				240	.004 Amp	2,4,8		.65 ns
K4H561638H-ZIB0	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	-40 Cel		BOTTOM		R-PBGA-B60			133 MHz		Not Qualified	268435456 bit					.003 Amp	2,4,8		.75 ns
K4X4G303PD-AGD8	Samsung	DDR1 DRAM		168	BGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words				1.8		32								128MX32	128M			BOTTOM	1	S-PBGA-B168			800 MHz	12 mm		4294967296 bit							12 mm
K4H510838F-HCCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		385 mA	67108864 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3		200 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.65 ns
K4H560838E-ZCA2	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel		BOTTOM		R-PBGA-B60	3		133 MHz		Not Qualified	268435456 bit				260	.003 Amp	2,4,8
K4H560438H-ZCCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	67108864 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8		.65 ns
K4H560438J-HCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		230 mA	67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		166 MHz		Not Qualified	268435456 bit			e3		.003 Amp	2,4,8		.7 ns
K4C89183AF-GCF5	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4	YES	COMMON	2.5	1.8,2.5	18	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel		3-STATE	16MX18	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V	250 MHz		Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0			2,4		.6 ns
K4H510438C-ZLB0	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		133 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.75 ns
K4H510838F-HLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		385 mA	67108864 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3		200 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.65 ns
K4H511638G-HLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		230 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4R271669B-MCK7T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62			711 MHz		Not Qualified	134217728 bit			e0
K4H511638B-ZLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		405 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60	3		166 MHz		Not Qualified	536870912 bit				260	.005 Amp	2,4,8		.7 ns
K4H510438J-BPB3T	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	128MX4	128M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		166 MHz		Not Qualified	536870912 bit			e3	260	.005 Amp	2,4,8		.7 ns
K4Y54084UF-JCB3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	32MX8	32M			BOTTOM		R-PBGA-B104			400 MHz		Not Qualified	268435456 bit					.34 Amp			53.6 ns
K4F4E3S4HF-GUCJ0	Samsung	LPDDR4 DRAM		200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	ASYNCHRONOUS		134217728 words						32	GRID ARRAY							128MX32	128M			BOTTOM	1	R-PBGA-B200						4294967296 bit
K4H511638D-ZPB0T	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		345 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		133 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.75 ns
K4C89183AF-GIFB0	Samsung	DDR1 DRAM		60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY							16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V			Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					.5 ns
K4H560838J-HLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		166 MHz		Not Qualified	268435456 bit			e3		.003 Amp	2,4,8		.7 ns
K4H560838J-HCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		166 MHz		Not Qualified	268435456 bit			e3		.003 Amp	2,4,8		.7 ns
K4Y50044UE-JCC4	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1110 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1				Not Qualified	536870912 bit			e3		.04 Amp			28 ns
K4H510438B-ZLB0	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	128MX4	128M	0 Cel		BOTTOM		R-PBGA-B60	3		133 MHz		Not Qualified	536870912 bit				260	.005 Amp	2,4,8		.75 ns
K4H511638C-ZCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3		166 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.7 ns
K4H510838G-HLB30	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4H560838H-ZCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	33554432 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3		200 MHz		Not Qualified	268435456 bit			e1	260	.004 Amp	2,4,8
K4H510838D-ZPB0	Samsung	DDR1 DRAM	AUTOMOTIVE	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	125 Cel		3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		133 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.75 ns
K4H560438E-ZLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	67108864 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX4	64M	0 Cel		BOTTOM		R-PBGA-B60	3		200 MHz		Not Qualified	268435456 bit				260	.004 Amp	2,4,8		.65 ns
K4H510838C-ZPB3T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4F6E3S4HM-GUCL0	Samsung	LPDDR4 DRAM		200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	ASYNCHRONOUS		536870912 words						32	GRID ARRAY							512MX32	512M			BOTTOM	1	R-PBGA-B200						17179869184 bit
K4H511638F-HPB3T	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	32MX16	32M	-40 Cel		BOTTOM		R-PBGA-B60			166 MHz		Not Qualified	536870912 bit					.005 Amp	2,4,8		.7 ns
K4H511638G-HCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		255 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3		200 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.65 ns
K4H510838D-ZPB0T	Samsung	DDR1 DRAM	AUTOMOTIVE	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	125 Cel		3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		133 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.75 ns
K4H560838J-HCCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	33554432 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8		.65 ns
K4H561638F-GCC4	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	268435456 bit			e0		.004 Amp	2,4,8		.65 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.