BGA DRAM 903

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4Y54164UF-JCC4	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	16777216 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M				BOTTOM		R-PBGA-B104						Not Qualified	268435456 bit					.34 Amp			53.6 ns
K4H511638C-ZLB0	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			133 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.75 ns
K4H641638N-FCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	4194304 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M		0 Cel		BOTTOM		R-PBGA-B60				166 MHz		Not Qualified	67108864 bit					.004 Amp	2,4,8		.7 ns
K4H510438J-BPCCT	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		190 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	128MX4	128M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3	260	.005 Amp	2,4,8		.65 ns
K4F6E3S4HM-GFCL0	Samsung	LPDDR4 DRAM		200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	ASYNCHRONOUS		536870912 words						32	GRID ARRAY						512MX32	512M				BOTTOM	1	R-PBGA-B200							17179869184 bit
K4H511638C-ZPB0T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		345 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			133 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.75 ns
K4H561638J-HCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	268435456 bit			e3		.003 Amp	2,4,8		.7 ns
K4H510438F-HCCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		385 mA	134217728 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.65 ns
K4H511638C-ZCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4H560838J-HCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	33554432 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8		.65 ns
K4H510438G-HLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.65 ns
K4C89093AF-GCG70	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		9	GRID ARRAY				70 Cel		32MX9	32M		0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V				Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					.5 ns
K4H511638F-HLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		400 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel		BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	536870912 bit				260	.005 Amp	2,4,8		.65 ns
K4H510438C-ZCB0	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			133 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.75 ns
K4F6E3S4HM-MGCJ0	Samsung	LPDDR4 DRAM		200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	ASYNCHRONOUS		536870912 words						32	GRID ARRAY						512MX32	512M				BOTTOM	1	R-PBGA-B200							17179869184 bit
K4R441869B-NCK7T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M			Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	150994944 bit			e0
K4Y50084UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		980 mA	67108864 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3		.025 Amp			36 ns
K4T1G164QM-ZCCC0	Samsung	DDR2 DRAM	OTHER	92	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.8		16	GRID ARRAY				95 Cel		64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B92	2	1.9 V	1.2 mm		11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO REFRESH	e1				21.7 mm	.6 ns
K4H511638B-GCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		450 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60				200 MHz		Not Qualified	536870912 bit			e0		.005 Amp	2,4,8		.65 ns
K4H561638J-HCCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8		.65 ns
K4T1G044QM-ZCD5	Samsung	DDR2 DRAM	OTHER	68	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY	BGA68,9X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M		0 Cel		BOTTOM	1	R-PBGA-B68	3	1.9 V	1.2 mm	267 MHz	11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO REFRESH		260		4,8	21.7 mm	.5 ns
K4H510838F-HLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.7 ns
K4H511638F-HCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.7 ns
K4H511638D-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		400 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.65 ns
K4H561638F-ZLA2	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel		BOTTOM		R-PBGA-B60	3			133 MHz		Not Qualified	268435456 bit				260	.003 Amp	2,4,8		.75 ns
K4C89363AF-GCG7	Samsung	DDR1 DRAM	COMMERCIAL	144	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	70 Cel	3-STATE	8MX36	8M	2.375 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B144		2.625 V		400 MHz		Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0			2,4		.5 ns
K4Y50164UE-JCA2T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		920 mA	33554432 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3		.04 Amp			36 ns
K4H560438E-GLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	67108864 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M		0 Cel		BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	268435456 bit				240	.004 Amp	2,4,8		.65 ns
K4H510438J-BLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3	260	.005 Amp	2,4,8		.7 ns
K4H560438J-HLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	67108864 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3		.003 Amp	2,4,8		.65 ns
K4Y50044UE-JCC4T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1110 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3		.04 Amp			28 ns
K4H560838H-ZCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit			e1	260	.003 Amp	2,4,8
K4H560838H-ZCCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	33554432 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8
K4H510838B-ZLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M		0 Cel		BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit				260	.005 Amp	2,4,8		.7 ns
K4H560438E-ZCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		260 mA	67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M		0 Cel		BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit				260	.003 Amp	2,4,8		.7 ns
K4H560838E-GLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M		0 Cel		BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit				240	.003 Amp	2,4,8		.7 ns
K4H560438E-ZCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		260 mA	67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M		0 Cel		BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit				260	.003 Amp	2,4,8		.7 ns
K4C89093AF-GIF60	Samsung	DDR1 DRAM		60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		9	GRID ARRAY						32MX9	32M			TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V				Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					.5 ns
K4Y50084UE-JCC4	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3		.04 Amp			28 ns
K4H510838J-BLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3	260	.005 Amp	2,4,8		.65 ns
K4Y50024UE-JCC4T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1070 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3		.04 Amp			28 ns
K4H511638J-BLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3	260	.005 Amp	2,4,8		.65 ns
K4H511638G-HLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		255 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.65 ns
K4H511638B-GLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		405 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60				166 MHz		Not Qualified	536870912 bit			e0		.005 Amp	2,4,8		.7 ns
K4H560438E-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	67108864 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M		0 Cel		BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	268435456 bit				260	.004 Amp	2,4,8		.65 ns
K4H510438G-HCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.65 ns
K4T1G084QM-ZCD5	Samsung	DDR2 DRAM	OTHER	68	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY	BGA68,9X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M		0 Cel		BOTTOM	1	R-PBGA-B68	3	1.9 V	1.2 mm	267 MHz	11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		260		4,8	21.7 mm	.5 ns
K4H510838J-BPCCT	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3	260	.005 Amp	2,4,8		.65 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.