BGA DRAM 903

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4H511638J-BLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3		260	.005 Amp	2,4,8		.65 ns
K4H511638G-HLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		255 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.65 ns
K4H511638B-GLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		405 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60				166 MHz		Not Qualified	536870912 bit			e0			.005 Amp	2,4,8		.7 ns
K4H560438E-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	67108864 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	0 Cel		BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	268435456 bit					260	.004 Amp	2,4,8		.65 ns
K4H510438G-HCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	536870912 bit			e1		260	.005 Amp	2,4,8		.65 ns
K4T1G084QM-ZCD5	Samsung	DDR2 DRAM	OTHER	68	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY	BGA68,9X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68	3	1.9 V	1.2 mm	267 MHz	11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260		4,8	21.7 mm	.5 ns
K4H510838J-BPCCT	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3		260	.005 Amp	2,4,8		.65 ns
K4H510838C-ZLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.7 ns
K4H560838E-ZLA2	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel		BOTTOM		R-PBGA-B60	3			133 MHz		Not Qualified	268435456 bit					260	.003 Amp	2,4,8
K4T1G164QM-ZCCC	Samsung	DDR2 DRAM	OTHER	92	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA92,9X21,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B92	3	1.9 V	1.2 mm	200 MHz	11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260		4,8	21.7 mm	.6 ns
K4H560838E-GCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel		BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit					240	.003 Amp	2,4,8		.7 ns
K4H561638F-GLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit						.004 Amp	2,4,8		.65 ns
K4Y50024UC-JCB3	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1000 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B104	3					Not Qualified	536870912 bit			e1		260	.025 Amp			35 ns
K4H511638D-ZIB0T	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		345 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			133 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.75 ns
K4H511638C-ZIB3T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.7 ns
K4H510838D-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		385 mA	67108864 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.65 ns
K4H511638J-BPB3T	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3		260	.005 Amp	2,4,8		.7 ns
K4H511638C-ZPB3T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.7 ns
K4H560838H-ZLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	268435456 bit			e3			.003 Amp	2,4,8
K4H561638F-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3			.004 Amp	2,4,8		.65 ns
K4X51163PK-FGD80	Samsung	DDR1 DRAM		60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		16	GRID ARRAY						32MX16	32M			BOTTOM	1	R-PBGA-B60							536870912 bit
MT49H8M36BM-33	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	8MX36	8M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260			18.5 mm	.3 ns
MT49H8M36CBM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel		8MX36	8M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	.5 ns
EDJ5304AASE-DJ-E	Micron Technology	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		4	GRID ARRAY						128MX4	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V				Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH	e1
MT49H16M18BM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	.3 ns
MT49H16M18BM-5	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260			18.5 mm	.5 ns
MT49H16M18BM-25	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260			18.5 mm	.25 ns
MT49H32M9CBM-25	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	32MX9	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260		2,4,8	18.5 mm	.25 ns
MT49H8M36CFM-25	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel		8MX36	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.25 ns
MT49H64M9CSJ-18:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		830 mA	67108864 words	2,4,8		SEPARATE		1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM		R-PBGA-B144				533 MHz		Not Qualified	603979776 bit						.005 Amp	2,4,8		.12 ns
MT49H8M36CFM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel		8MX36	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.3 ns
MT49H16M18CSJ-25E:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		655 mA	16777216 words			SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM		R-PBGA-B144				400 MHz		Not Qualified	301989888 bit						.005 Amp	2,4,8		.3 ns
MT49H16M18CBM-25	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260		2,4,8	18.5 mm	.25 ns
MT49H16M18BM-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	.25 ns
MT6V16M16F2-4D	Micron Technology	RAMBUS DRAM		84	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY						16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84						Not Qualified	268435456 bit		SELF CONTAINED REFRESH	e1
MT49H8M36BM-5	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	8MX36	8M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260			18.5 mm	.5 ns
MT49H16M18CSJ-18:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		830 mA	16777216 words			SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM		R-PBGA-B144				533 MHz		Not Qualified	301989888 bit						.005 Amp	2,4,8		.22 ns
EDJ5304AASE-AC-E	Micron Technology	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		4	GRID ARRAY						128MX4	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V				Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH	e1
EDJ5304AASE-AG-E	Micron Technology	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		4	GRID ARRAY						128MX4	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V				Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH	e1
MT49H8M36CBM-25	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel		8MX36	8M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	.25 ns
EDF8132A3MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	178	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2		32	GRID ARRAY			.8 mm	85 Cel		256MX32	256M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B178		1.3 V	.85 mm		10.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1					11.5 mm
MT49H8M36BM-25	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	8MX36	8M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260			18.5 mm	.25 ns
MT49H16M18FM-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.25 ns
MT49H64M9CSJ-33:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		530 mA	67108864 words	2,4,8		SEPARATE		1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	603979776 bit						.005 Amp	2,4,8		.25 ns
MT49H8M36FM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.5 ns
MT6V16M16F2-4B	Micron Technology	RAMBUS DRAM		64	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY						16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64						Not Qualified	268435456 bit		ACTIVE REFRESH; SELF REFRESH	e1
MT49H8M36FM-33	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	8MX36	8M		TIN LEAD	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.3 ns
MT49H8M36CBM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel		8MX36	8M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	.3 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.