BGA DRAM 903

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4Y50084UE-JCC4T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			28 ns
K4H561638J-HPB3	Samsung	DDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			167 MHz		Not Qualified	268435456 bit			e3			.003 Amp	2,4,8		.7 ns
K4H560438J-HLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	67108864 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3			.003 Amp	2,4,8		.65 ns
K4H560438H-ZCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	268435456 bit			e3			.003 Amp	2,4,8		.7 ns
K4C89363AF-GIFB0	Samsung	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		36	GRID ARRAY							8MX36	8M		TIN LEAD	BOTTOM	1	R-PBGA-B144		2.625 V				Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0						.5 ns
K4H561638F-GCA2	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B60				133 MHz		Not Qualified	268435456 bit			e0			.003 Amp	2,4,8		.75 ns
K4H510838C-ZIB0T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel		3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			133 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.75 ns
K4H561638J-HLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	268435456 bit			e3			.003 Amp	2,4,8		.7 ns
K4H561638J-HLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3			.004 Amp	2,4,8		.65 ns
K4H511638F-HLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit					260	.005 Amp	2,4,8		.7 ns
K4Y54164UF-JCC3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	16777216 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	16MX16	16M			BOTTOM		R-PBGA-B104						Not Qualified	268435456 bit						.34 Amp			53.6 ns
K4R441869B-MCG6T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	150994944 bit			e0
K4C89183AF-GIG70	Samsung	DDR1 DRAM		60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY							16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V				Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0						.5 ns
K4H561638F-GCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit			e0		240	.003 Amp	2,4,8		.7 ns
K4Y50044UE-JCA2T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		740 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			36 ns
K4H560838H-ZLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	33554432 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3			.004 Amp	2,4,8
K4H510838B-GLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		390 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60				166 MHz		Not Qualified	536870912 bit			e0			.005 Amp	2,4,8		.7 ns
K4H511638B-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		450 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60				200 MHz		Not Qualified	536870912 bit						.005 Amp	2,4,8		.65 ns
K4H510838G-HCCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		240 mA	67108864 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	536870912 bit			e1		260	.005 Amp	2,4,8		.65 ns
K4Y50164UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1500 mA	33554432 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3			.025 Amp			28 ns
K4Y54164UF-JCB3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	16777216 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm			3-STATE	16MX16	16M			BOTTOM		R-PBGA-B104						Not Qualified	268435456 bit						.34 Amp			53.6 ns
MT49H16M18FM-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel		3-STATE	16MX18	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.25 ns
MT49H64M9CSJ-33:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		530 mA	67108864 words	2,4,8		SEPARATE		1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel		3-STATE	64MX9	64M	0 Cel		BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	603979776 bit						.005 Amp	2,4,8		.25 ns
MT49H8M36FM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel		3-STATE	8MX36	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.5 ns
MT6V16M16F2-4B	Micron Technology	RAMBUS DRAM		64	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY							16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64						Not Qualified	268435456 bit		ACTIVE REFRESH; SELF REFRESH	e1
MT49H8M36FM-33	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm			3-STATE	8MX36	8M		TIN LEAD	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.3 ns
MT49H8M36CBM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel			8MX36	8M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	.3 ns
MT49H16M18CFM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	597 mA	16777216 words			SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel		3-STATE	16MX18	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0			.026 Amp	2,4,8	18.5 mm	.5 ns
MT49H32M18CFM-25	Micron Technology	DDR DRAM	COMMERCIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	33554432 words	2,4,8		SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX18	32M	0 Cel		BOTTOM		R-PBGA-B144				400 MHz		Not Qualified	603979776 bit						.048 Amp	2,4,8		.2 ns
MT49H32M9CFM-25	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm			3-STATE	32MX9	32M		TIN LEAD	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0				2,4,8	18.5 mm	.25 ns
MT49H16M18CSJ-18IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		830 mA	16777216 words			SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel		3-STATE	16MX18	16M	-40 Cel		BOTTOM		R-PBGA-B144				533 MHz		Not Qualified	301989888 bit						.005 Amp	2,4,8		.22 ns
EDJ5304AASE-DG-E	Micron Technology	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		4	GRID ARRAY							128MX4	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V				Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH	e1
MT49H32M18CFM-33	Micron Technology	DDR DRAM	COMMERCIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		819 mA	33554432 words	2,4,8		SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	70 Cel		3-STATE	32MX18	32M	0 Cel		BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	603979776 bit						.048 Amp	2,4,8		.25 ns
MT49H64M9CBM-33	Micron Technology	DDR DRAM	COMMERCIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		819 mA	67108864 words	2,4,8		SEPARATE		1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	70 Cel		3-STATE	64MX9	64M	0 Cel		BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	603979776 bit						.048 Amp	2,4,8		.25 ns
MT6V16M16F2-3B	Micron Technology	RAMBUS DRAM		84	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY							16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84						Not Qualified	268435456 bit		SELF CONTAINED REFRESH	e1
MT49H16M18CFM-5	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0				2,4,8	18.5 mm	.5 ns
MT49H16M18CBM-33:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		530 mA	16777216 words			SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel		3-STATE	16MX18	16M	0 Cel		BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	301989888 bit						.005 Amp	2,4,8		.35 ns
MT49H32M9CFM-5	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm			3-STATE	32MX9	32M		TIN LEAD	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0				2,4,8	18.5 mm	.5 ns
MT49H32M9CFM-33	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm			3-STATE	32MX9	32M		TIN LEAD	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0				2,4,8	18.5 mm	.3 ns
MT49H64M9CSJ-25EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		655 mA	67108864 words	2,4,8		SEPARATE		1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel		3-STATE	64MX9	64M	-40 Cel		BOTTOM		R-PBGA-B144				400 MHz		Not Qualified	603979776 bit						.005 Amp	2,4,8		.2 ns
MT6V16M18F2-3M	Micron Technology	RAMBUS DRAM		84	BGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY							16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84						Not Qualified	301989888 bit		SELF CONTAINED REFRESH	e1
EDX5116ACSE-2A-E	Micron Technology	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B104						Not Qualified	536870912 bit									.065 ns
MT49H16M18CFM-18:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		830 mA	16777216 words			SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel		3-STATE	16MX18	16M	0 Cel		BOTTOM		R-PBGA-B144				533 MHz		Not Qualified	301989888 bit						.005 Amp	2,4,8		.22 ns
MT49H32M9FM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel		3-STATE	32MX9	32M	-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH		30	235			18.5 mm	.3 ns
MT49H16M18CBM-18:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		830 mA	16777216 words			SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel		3-STATE	16MX18	16M	0 Cel		BOTTOM		R-PBGA-B144				533 MHz		Not Qualified	301989888 bit						.005 Amp	2,4,8		.22 ns
MT49H8M36FM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel		3-STATE	8MX36	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	.3 ns
MT49H16M18CSJ-33:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		530 mA	16777216 words			SEPARATE		1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel		3-STATE	16MX18	16M	0 Cel		BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	301989888 bit						.005 Amp	2,4,8		.35 ns
MT49H8M36CFM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel			8MX36	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.