DIMM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Length	Maximum Access Time
THMD51E01B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH			.75 ns
THMY25E10A70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3429 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V		143 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH	.049 Amp		5.4 ns
THM65V4095BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	268435456 bit	3.13 V				50 ns
THMY51E01C75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		8	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		64MX8	64M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	34.85 mm		4 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX		133.35 mm	5.4 ns
THLY51N61C80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2400 mA	67108864 words	YES	COMMON	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V	31.88 mm	125 MHz	3.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX	.016 Amp	67.6 mm	6 ns
THLY12N01A75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	.008 Amp		5.4 ns
THLY25N01B70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1360 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V		143 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH	.008 Amp		5.4 ns
THMY12N31C75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	.004 Amp		5.4 ns
THMR1N8E-8	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	64MX16	64M		DUAL	1	R-XDMA-N184	2.63 V	31.75 mm	800 MHz	4.8 mm	Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH; WD-MAX		133.35 mm	45 ns
THLY12N11C75L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	16777216 words	YES	COMMON	3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	133 MHz	3.8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	.004 Amp	67.6 mm	5.4 ns
THM65V4095ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	640 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	268435456 bit	3.13 V	CAS BEFORE RAS/HIDDEN REFRESH	.002 Amp		40 ns
THLY648051FG-10L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	600 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-X144	3.6 V	25.4 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	.004 Amp		7 ns
THMY7216H1EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1620 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH	.009 Amp		6 ns
THMD25E11B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH			.75 ns
THM72V8015BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	603979776 bit	3.13 V				40 ns
THM65V1615BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	1073741824 bit	3.13 V				50 ns
THMY7216D0CEG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2253 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH	.049 Amp		6 ns
THMY7232G1EG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	3240 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-X168	3.6 V	34.85 mm	125 MHz	4 mm	Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH	.018 Amp	133.35 mm	6 ns
THMY12E11A70L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		8	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		16MX8	16M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	34.98 mm		2.8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX		133.35 mm	5.4 ns
THMY641691EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	1440 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-X168	3.6 V	30.48 mm	125 MHz	2.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	.008 Amp	133.35 mm	6 ns
THLY644031FG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	500 mA	4194304 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	ZIG-ZAG	1	R-XZMA-N144	3.45 V	25.4 mm	100 MHz		Not Qualified	268435456 bit	3.15 V	AUTO/SELF REFRESH	.004 Amp		9.5 ns
THLY12N01A80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	.008 Amp		6 ns
THMY643281EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	2880 mA	67108864 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	DUAL	1	R-XDMA-X168	3.6 V	30.48 mm	125 MHz	4 mm	Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	.016 Amp	133.35 mm	6 ns
TMHY6440A1AEG-12A	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1224 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL		R-PDMA-N168		27.94 mm	83 MHz		Not Qualified	268435456 bit			.032 Amp		9 ns
THLY51N61C70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2720 mA	67108864 words	YES	COMMON	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V	31.88 mm	143 MHz	3.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX	.016 Amp	67.6 mm	5.4 ns
THLY51N61C75L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2560 mA	67108864 words	YES	COMMON	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V	31.88 mm	133 MHz	3.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX	.016 Amp	67.6 mm	5.4 ns
THMR2N16-6	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	256MX16	256M		DUAL	1	R-XDMA-N184	2.63 V	34.93 mm	600 MHz	8 mm	Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH		133.35 mm	53 ns
THMR1E16E-7	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	128MX18	128M		DUAL	1	R-XDMA-N184	2.63 V	31.75 mm	711 MHz	8 mm	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH; WD-MAX		133.35 mm	45 ns
THMY51N01B80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2400 mA	67108864 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	.016 Amp		6 ns
THMR1N16E-7	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	128MX16	128M		DUAL	1	R-XDMA-N184	2.63 V	31.75 mm	711 MHz	8 mm	Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH; WD-MAX		133.35 mm
THMY644071EG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	500 mA	4194304 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	3.45 V		100 MHz		Not Qualified	268435456 bit	3.15 V	AUTO/SELF REFRESH	.004 Amp		8.5 ns
THMY642051AEG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	2097152 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M	0 Cel	DUAL		R-PDMA-N168			100 MHz		Not Qualified	134217728 bit			.016 Amp		8.5 ns
THLY6416G1FG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	.008 Amp		6 ns
THMY642051AEG12A	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1040 mA	2097152 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M	0 Cel	DUAL		R-PDMA-N168			83.3 MHz		Not Qualified	134217728 bit			.016 Amp		9 ns
THMY648091EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	720 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-X168	3.6 V	2.8 mm	125 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	.004 Amp	133.35 mm	6 ns
THMR2N2Z-8	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	32MX16	32M		DUAL	1	R-XDMA-N184	2.63 V	34.93 mm	800 MHz	4.8 mm	Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH		133.35 mm	45 ns
THMY64E11A75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		16	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		8MX16	8M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	25.53 mm		2.8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX		133.35 mm	5.4 ns
THMY7264E0LEG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6853 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH	.049 Amp		5.4 ns
THMY6480H1EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	720 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	.004 Amp		6 ns
THLG641021AFG-8	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		670 mA	1048576 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel	DUAL		R-PDMA-N144			125 MHz		Not Qualified	67108864 bit			.008 Amp		7.5 ns
THMY51E2SA70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6489 mA	134217728 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	43.05 mm	142 MHz	6.35 mm	Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH	.067 Amp	133.35 mm	5.4 ns
THLD25N11B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	DUAL	1	R-XDMA-N200	2.7 V	31.75 mm	125 MHz	3.8 mm	Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		67.6 mm	.8 ns
THMY64E11A80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		16	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		8MX16	8M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	25.53 mm		2.8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX		133.35 mm	6 ns
THMY6416H1EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	1440 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-X168	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	.008 Amp		6 ns
TMHY644041AEG-12	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1224 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL		R-PDMA-N168		27.94 mm	83 MHz		Not Qualified	268435456 bit			.032 Amp		9 ns
THMY721691EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	1620 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	DUAL	1	R-XDMA-X168	3.6 V	30.48 mm	125 MHz	2.8 mm	Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH	.009 Amp	133.35 mm	6 ns
THLD25N11B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	DUAL	1	R-XDMA-N200	2.7 V	31.75 mm	143 MHz	3.8 mm	Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		67.6 mm	.75 ns
THMD25N11B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH			.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.