Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
33554432 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
32MX16 |
32M |
DUAL |
R-PDMA-N184 |
600 MHz |
Not Qualified |
536870912 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
700 mA |
1048576 words |
COMMON |
5 |
5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX64 |
1M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
67108864 bit |
.064 Amp |
60 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
560 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
825 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
301989888 bit |
.0025 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1040 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N144 |
125 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1104 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
29.21 mm |
83 MHz |
Not Qualified |
268435456 bit |
.032 Amp |
8 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1024 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
29.21 mm |
100 MHz |
Not Qualified |
268435456 bit |
.032 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
560 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
520 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
268435456 bit |
.002 Amp |
60 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
540 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
66 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
12 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
134217728 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
128MX16 |
128M |
DUAL |
R-PDMA-N184 |
800 MHz |
Not Qualified |
2147483648 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
100663296 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
96MX16 |
96M |
DUAL |
R-PDMA-N184 |
711 MHz |
Not Qualified |
1610612736 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
67108864 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
64MX16 |
64M |
DUAL |
R-PDMA-N184 |
711 MHz |
Not Qualified |
1073741824 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1080 mA |
8388608 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
Not Qualified |
536870912 bit |
.0016 Amp |
50 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
760 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
134217728 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
128MX16 |
128M |
DUAL |
R-PDMA-N184 |
600 MHz |
Not Qualified |
2147483648 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1280 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
125 MHz |
Not Qualified |
134217728 bit |
.016 Amp |
6 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1080 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1184 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
268435456 bit |
.032 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1100 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
603979776 bit |
.0025 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
134217728 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
128MX16 |
128M |
DUAL |
R-PDMA-N184 |
800 MHz |
Not Qualified |
2147483648 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
67108864 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
64MX16 |
64M |
DUAL |
R-PDMA-N184 |
800 MHz |
Not Qualified |
1073741824 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2100 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM200 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N200 |
83 MHz |
Not Qualified |
1207959552 bit |
.036 Amp |
9.5 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1440 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
268435456 bit |
.008 Amp |
60 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2360 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
2147483648 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
100663296 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
96MX16 |
96M |
DUAL |
R-PDMA-N184 |
600 MHz |
Not Qualified |
1610612736 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1440 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
268435456 bit |
.016 Amp |
60 ns |
||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
800 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
Not Qualified |
134217728 bit |
.0012 Amp |
60 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
301 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
DUAL |
R-PDMA-N72 |
25.4 mm |
Not Qualified |
67108864 bit |
.0006 Amp |
60 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5860 mA |
67108864 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
4831838208 bit |
.028 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1280 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1760 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
1073741824 bit |
.008 Amp |
60 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2370 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM200 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N200 |
100 MHz |
Not Qualified |
1207959552 bit |
.019 Amp |
7.5 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2080 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
2147483648 bit |
.0192 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
261 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
DUAL |
R-PDMA-N72 |
25.4 mm |
Not Qualified |
67108864 bit |
.0006 Amp |
80 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1320 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1840 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
920 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
26.67 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
660 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX64 |
1M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
67108864 bit |
.064 Amp |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
760 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2080 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
1073741824 bit |
.008 Amp |
50 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1840 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
1073741824 bit |
.004 Amp |
7 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1760 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
1073741824 bit |
.008 Amp |
60 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
100663296 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
96MX16 |
96M |
DUAL |
R-PDMA-N184 |
800 MHz |
Not Qualified |
1610612736 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
33554432 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
32MX16 |
32M |
DUAL |
R-PDMA-N184 |
711 MHz |
Not Qualified |
536870912 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2360 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
2147483648 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2080 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
1073741824 bit |
.008 Amp |
50 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
720 mA |
4194304 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
DUAL |
R-PDMA-N72 |
25.4 mm |
Not Qualified |
134217728 bit |
.0012 Amp |
70 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.