DIP DRAM 1,315

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMX44C257-12N	Texas Instruments	STATIC COLUMN DRAM		20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm		3-STATE	256KX4	256K			DUAL	1	R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						24.325 mm	120 ns
TMS4257-12NE	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		DUAL	1	R-PDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	120 ns
SMJ4C1024-80SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	26.67 mm	80 ns
SM4164-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
SMJ4416-12JDS	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	100 Cel	3-STATE	16KX4	16K	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	120 ns
5962-9231202MZX	Texas Instruments	FAST PAGE DRAM	MILITARY	24	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		4	IN-LINE			2.54 mm	125 Cel		4MX4	4M	-55 Cel	TIN LEAD	ZIG-ZAG	1	R-XZIP-T24	5.5 V	13.08 mm	2.92 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0				31.75 mm	80 ns
TMS4161-20NE	Texas Instruments	VIDEO DRAM	INDUSTRIAL	20	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		DUAL	2	R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH; 256 X 1 SAM PORT					24.325 mm	200 ns
TMS4C1024-12NL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.48 mm	120 ns
5962-8949703MXA	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	DUAL	2	R-XDIP-T28	5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0					120 ns
TMS4256-10JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			100 ns
TMS4132-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			32768 words		SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	32KX1	32K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	32768 bit								150 ns
TMS4257-15NE	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		DUAL	1	R-PDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	150 ns
5962-01-303-3553	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel		DUAL		R-XDIP-T18				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
SM4256-12JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			120 ns
TMS4461-12NL	Texas Instruments	VIDEO DRAM	COMMERCIAL	24	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words			5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL	2	R-PDIP-T24	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED		31.75 mm	120 ns
TMS4108-15NL1	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			8192 words		SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	8KX1	8K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	8192 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
TMS4108-20NL0	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			8192 words		SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	8KX1	8K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	8192 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
5962-9062203MVA	Texas Instruments	FAST PAGE DRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T16	5.5 V	3.93 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				20.32 mm	80 ns
SMJ4416-20JDS	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	100 Cel	3-STATE	16KX4	16K	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	200 ns
TMS4108-20NL1	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			8192 words		SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	8KX1	8K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	8192 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
TMX44C257-10N	Texas Instruments	STATIC COLUMN DRAM		20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm		3-STATE	256KX4	256K			DUAL	1	R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						24.325 mm	100 ns
SMJ4164-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		DUAL	1	R-CDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			150 ns
TMS4464-15JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
SMJ4164-15JDS	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL	1	R-CDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			150 ns
TMX4C1025-10N	Texas Instruments	NIBBLE MODE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	100 ns
TMS4050JDL	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			300 ns
SMJ44C251-10JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	110 mA	262144 words			5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28	5.5 V	4.445 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	35.925 mm	100 ns
TMS4464-12NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.48 mm	120 ns
TMS4050-2NL	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		70 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
5962-9062201MVA	Texas Instruments	FAST PAGE DRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T16	5.5 V	3.93 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				20.32 mm	120 ns
TMS4108-15NL0	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			8192 words		SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	8KX1	8K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	8192 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
5962-9084701MUX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			2.54 mm	125 Cel		1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	4.445 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					25.527 mm	120 ns
TMX4C1029-12N	Texas Instruments	NIBBLE MODE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	120 ns
TMS4132-25JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			32768 words		SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	32KX1	32K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	32768 bit								250 ns
SMJ4164-15JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		DUAL	1	R-CDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			150 ns
TMS4416-20NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		16384 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.48 mm	200 ns
5962-9231203MZA	Texas Instruments	FAST PAGE DRAM	MILITARY	24	DIP	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	80 mA	4194304 words	NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	DRAMs	2.54 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		ZIG-ZAG	1	R-XZIP-T24	5.5 V	13.08 mm	2.92 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	31.75 mm	70 ns
SMC4050JR	Texas Instruments		OTHER	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE		80 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-55 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			300 ns
5962-9084702MUA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-XDIP-T20	5.5 V	4.44 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	25.525 mm	100 ns
5962-01-326-2476	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
TMS4050-2JL	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		70 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
TMS4C1027-10N	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	22.48 mm	100 ns
TMS4030-1NL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	4096 words		SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-PDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			250 ns
SMJ4416-12JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	120 ns
SMJ44C256-10SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	SYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	26.67 mm	100 ns
TMX4C1027-12N	Texas Instruments	STATIC COLUMN DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	120 ns
SMJ4164-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		DUAL	1	R-CDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			200 ns
5962-01-270-0685	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.