DIP DRAM 1,315

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS4027-25JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			4096 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel		DUAL		R-XDIP-T16				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			250 ns
SMJ4416-20JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K		-40 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	200 ns
5962-01-246-8192	Texas Instruments	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K		-55 Cel		DUAL		R-XDIP-T16				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
TMS4030NL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel		DUAL		R-PDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			300 ns
5962-9061703MRA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K		-55 Cel		DUAL	1	R-GDIP-T20	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		100 ns
SMJ4464-12JDS	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX4	64K		-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	120 ns
SMJ4416-15JDS	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	100 Cel	3-STATE	16KX4	16K		-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	150 ns
TMS4464-15NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K		0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.48 mm	150 ns
TMS4C1027-10NL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words		5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.48 mm	100 ns
TMS44C256-15NL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX4	256K		0 Cel		DUAL	1	R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					24.325 mm	150 ns
TMS4C1025-12NL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words		5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.48 mm	120 ns
SMJ44C256-10JD	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		4	IN-LINE				125 Cel		256KX4	256K		-55 Cel		DUAL	1	R-CDIP-T20	5.5 V				1048576 bit	4.5 V	CAS BEFORE RAS REFRESH						10 ns
SMJ4256-12JDS	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K		-55 Cel		DUAL	1	R-CDIP-T16	5.25 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED			120 ns
TMS4164-12JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K		0 Cel		DUAL		R-XDIP-T16				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			120 ns
LC338128PL-70	Onsemi		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		80 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDIP-T32				Not Qualified	1048576 bit						.0001 Amp		70 ns
LC32464P-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		70 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K		0 Cel		DUAL		R-PDIP-T18				Not Qualified	262144 bit						.001 Amp		80 ns
LC338128PL-80	Onsemi		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDIP-T32				Not Qualified	1048576 bit						.0001 Amp		80 ns
LC338128P-10	Onsemi		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDIP-T32				Not Qualified	1048576 bit						.001 Amp		100 ns
LC338128P-80	Onsemi		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDIP-T32				Not Qualified	1048576 bit						.001 Amp		80 ns
LC338128P-70	Onsemi		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		80 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDIP-T32				Not Qualified	1048576 bit						.001 Amp		70 ns
LC338128PL-10	Onsemi		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDIP-T32				Not Qualified	1048576 bit						.0001 Amp		100 ns
8201002EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						150 ns
M38510/24401BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH						150 ns
M38510/24005BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		16384 words		5		1	IN-LINE				110 Cel		16KX1	16K		-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	16384 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						250 ns
M38510/24402BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH						150 ns
8201006EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						150 ns
8201007EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						200 ns
8201003EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						200 ns
M38510/24604BEX	STMicroelectronics	OTHER DRAM	MILITARY	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words	COMMON	5		1	IN-LINE	DIP16,.3			110 Cel		256KX1	256K		-55 Cel		DUAL		R-XDIP-T16	5.5 V			Not Qualified	262144 bit	4.5 V					.01 Amp		150 ns
8201002EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						150 ns
M38510/24602BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K		-55 Cel	Tin/Lead (Sn/Pb) - hot dipped	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0					150 ns
8201008EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						120 ns
8201003EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						200 ns
8201001EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						150 ns
M38510/24604BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K		-55 Cel	Tin/Lead (Sn/Pb) - hot dipped	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0					150 ns
M38510/24401BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH						150 ns
IMS2600P-10	STMicroelectronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K		0 Cel	TIN LEAD	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0					100 ns
M38510/24403BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH						200 ns
M38510/24602BEX	STMicroelectronics	OTHER DRAM	MILITARY	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words	COMMON	5		1	IN-LINE	DIP16,.3			110 Cel		256KX1	256K		-55 Cel		DUAL		R-XDIP-T16	5.5 V			Not Qualified	262144 bit	4.5 V					.01 Amp		150 ns
M38510/24005BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		16384 words		5		1	IN-LINE				110 Cel		16KX1	16K		-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	16384 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						250 ns
M38510/24403BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH						200 ns
8201007EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						200 ns
8201006EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						150 ns
M38510/24004BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		16384 words		5		1	IN-LINE				110 Cel		16KX1	16K		-55 Cel		DUAL	1	R-XDIP-T16	5.5 V			Not Qualified	16384 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						200 ns
8201001EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V				65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						150 ns
HYB514256AL-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		80 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	1048576 bit			e0			.0003 Amp		70 ns
HYB511000A-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0					80 ns
HYB4164-C3	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0					200 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.