DIP DRAM 1,315

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS4256-8NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL	1	R-PDIP-T16	5.25 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	80 ns
TMS4164-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
5962-9084703MUX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			2.54 mm	125 Cel		1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	4.445 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					25.527 mm	80 ns
TMS4164-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
5962-01-262-3540	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			4096 words		SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			250 ns
TMS4464-20JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
TMS4050-22NL	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED
SMJ4464-20JDS	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	200 ns
TMX4C1025-12N	Texas Instruments	NIBBLE MODE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	120 ns
5962-9061704MRA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	80 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-GDIP-T20	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		80 ns
TMX4C1024-10N	Texas Instruments	FAST PAGE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	100 ns
5962-9062203MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V	3.93 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				22.86 mm	80 ns
TMS4027-20JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			4096 words		SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
TMS44C257-15NL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	1	R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					24.325 mm	150 ns
TMS4116-30NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			16384 words		SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED			300 ns
5962-9062202MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V	3.93 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				22.86 mm	100 ns
5962-9062202MVA	Texas Instruments	FAST PAGE DRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T16	5.5 V	3.93 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				20.32 mm	100 ns
TMX4C1026-15N	Texas Instruments	NIBBLE MODE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	150 ns
SM44C256-12JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE			262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL		R-XDIP-T20				Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED			120 ns
TMX4C1029-10N	Texas Instruments	NIBBLE MODE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	100 ns
5962-9062201MVX	Texas Instruments	FAST PAGE DRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-CDIP-T16	5.5 V	3.93 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.32 mm	120 ns
SMJ4C1024-10SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	26.67 mm	100 ns
TMS44C256-12N	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	55 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	1	R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	24.325 mm	120 ns
SMJ44400-12SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	26.67 mm	120 ns
TMS1103-1NL	Texas Instruments		COMMERCIAL	18	DIP	32	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		68 mA	1024 words		SEPARATE			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	55 Cel		1KX1	1K	0 Cel		DUAL		R-PDIP-T18				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
SMJ44C251B-12JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	262144 words			5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	36.835 mm	120 ns
TMS4256-8NE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		DUAL	1	R-PDIP-T16	5.25 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	80 ns
M38510/24903BVA	Texas Instruments	PAGE MODE DRAM	MILITARY	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	CMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		1024 words			5		1	IN-LINE				125 Cel		1KX1	1K	-55 Cel		DUAL	1	R-XDIP-T18	5.5 V			Not Qualified	1024 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						120 ns
TMS4256-12JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			120 ns
5962-01-241-6980	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T16				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
TMS1103-1JL	Texas Instruments		COMMERCIAL	18	DIP	32	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		68 mA	1024 words		SEPARATE			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	55 Cel		1KX1	1K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
TMS4257-10JL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	262144 bit								100 ns
SMJ4C1024-80JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	22.606 mm	80 ns
TMS44C256-10N	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	65 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	1	R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	24.325 mm	100 ns
5962-01-277-8021	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel		DUAL		R-XDIP-T18				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
TMS4116-15NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		16384 words		SEPARATE	5	+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL	1	R-PDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		19.305 mm	150 ns
SMJ4416-12JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		16384 words			5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	16KX4	16K	0 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH					22.606 mm	120 ns
M38510/24902BVX	Texas Instruments	PAGE MODE DRAM	MILITARY	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1024 words			5		1	IN-LINE				125 Cel		1KX1	1K	-55 Cel		DUAL	1	R-XDIP-T18	5.5 V			Not Qualified	1024 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						100 ns
SMJ44400-80SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	85 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	26.67 mm	80 ns
TMS4060JR	Texas Instruments		OTHER	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		80 mA	4096 words		SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	85 Cel	3-STATE	4KX1	4K	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			300 ns
TMX4C1027-10N	Texas Instruments	STATIC COLUMN DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	100 ns
SMJ44C256-10JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	SYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		100 ns
TMS41128B-15L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		131072 words			5		1	IN-LINE				70 Cel	3-STATE	128KX1	128K	0 Cel		DUAL	1	R-PDIP-T16	5.5 V			Not Qualified	131072 bit	4.5 V	RAS ONLY REFRESH						150 ns
TMS4461-15NL	Texas Instruments	VIDEO DRAM	COMMERCIAL	24	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words			5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL	2	R-PDIP-T24	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED		31.75 mm	150 ns
SMJ44400-10SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	26.67 mm	100 ns
5962-01-261-6290	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T16				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
5962-9084701MUA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-XDIP-T20	5.5 V	4.44 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	25.525 mm	120 ns
SMJ44C256-80SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	SYNCHRONOUS	80 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	26.67 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.