FBGA DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
K4S56323LF-HR60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	5.4 ns
K4M56323PG-FF90T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90	1	111 MHz	Not Qualified	268435456 bit			.0003 Amp	1,2,4,8	7 ns
K4D553238F-JC50	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL		8388608 words	2,4,8	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B144		200 MHz	Not Qualified	268435456 bit	e0			2,4,8	.7 ns
K1C3216B2E-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	3		Not Qualified	33554432 bit	e1	260	.00003 Amp		70 ns
K1S321615C-FI70	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words		COMMON	2.9	2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B48			Not Qualified	33554432 bit			.00001 Amp		70 ns
K4T51083QE-ZLD5	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	67108864 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B60	1	266 MHz	Not Qualified	536870912 bit	e3		.0045 Amp	4,8	.5 ns
K4N56163QF-GC33T	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	370 mA	16777216 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM	R-PBGA-B84		300 MHz	Not Qualified	268435456 bit				4,8
K4M51153LE-YF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	175 mA	33554432 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	536870912 bit	e0		.0015 Amp	1,2,4,8	7 ns
K4S561633F-XG1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	185 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	268435456 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4B2G1646E-BCK0T	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	176 mA	134217728 words	8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM	R-PBGA-B96		800 MHz	Not Qualified	2147483648 bit			.01 Amp	8	.225 ns
K4M28323PH-HG75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	4194304 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	134217728 bit			.0003 Amp	1,2,4,8	6 ns
K4T51043QE-ZLCCT	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	200 MHz	Not Qualified	536870912 bit	e1	260	.0045 Amp	4,8	.6 ns
K4M56323LG-FN75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	160 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90	1	133 MHz	Not Qualified	268435456 bit			.001 Amp	1,2,4,8	5.4 ns
K4B2G0846D-HCH90	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	135 mA	268435456 words	8	COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM	R-PBGA-B78		667 MHz	Not Qualified	2147483648 bit			.012 Amp	8	.255 ns
K4S513233F-EC1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	240 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	7 ns
K4S64323LH-HC1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	2097152 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	R-PBGA-B90		105 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	7 ns
K4S51163LF-YC1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	240 mA	33554432 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	536870912 bit	e0		.001 Amp	1,2,4,8	7 ns
K4S51163PF-PF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	33554432 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	536870912 bit			.0006 Amp	1,2,4,8	6 ns
K4B2G1646E-BIK0T	Samsung	DDR3 DRAM	INDUSTRIAL	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	176 mA	134217728 words	8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX16	128M	-40 Cel		BOTTOM	R-PBGA-B96		800 MHz	Not Qualified	2147483648 bit			.01 Amp	8	.225 ns
K4N51163QE-GC22	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	300 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	R-PBGA-B84		450 MHz	Not Qualified	536870912 bit			.008 Amp	4,8	.35 ns
K4M563233E-MG1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	290 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		105 MHz	Not Qualified	268435456 bit	e0		.0012 Amp	1,2,4,8	7 ns
K4M51153LE-PL80	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	185 mA	33554432 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54	3	125 MHz	Not Qualified	536870912 bit		260	.0015 Amp	1,2,4,8	6 ns
K4B2G0446D-HCK00	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	130 mA	536870912 words	8	COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM	R-PBGA-B78		800 MHz	Not Qualified	2147483648 bit			.012 Amp	8	.225 ns
K4S563233F-HN1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	7 ns
K4S513233F-EL75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	300 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4M511633C-BF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	33554432 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4M56163PG-RG90T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	65 mA	16777216 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	268435456 bit			.00001 Amp	1,2,4,8	7 ns
K4X56163PG-LGCA	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	90 mA	16777216 words	2,4,8,16	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B60		111 MHz	Not Qualified	268435456 bit			.0003 Amp	2,4,8,16	6 ns
K4S56323LF-FS60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	268435456 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4T1G084QC-ZCD5T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	260 mA	134217728 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	267 MHz	Not Qualified	1073741824 bit	e1	260		4,8	.5 ns
K4S64163LH-RE75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	115 mA	4194304 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	67108864 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4S56323LF-FN1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	268435456 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4X56163PI-FGC30	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	95 mA	16777216 words	2,4,8,16	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	133 MHz	Not Qualified	268435456 bit	e1	260	.00001 Amp	2,4,8,16	6 ns
K4M56163LG-BL1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	16777216 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	268435456 bit	e3		.001 Amp	1,2,4,8	7 ns
K4S51323LF-ML1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	280 mA	16777216 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	536870912 bit	e0		.001 Amp	1,2,4,8	7 ns
K4S51153PF-PF1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	95 mA	33554432 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	536870912 bit	e3		.0006 Amp	1,2,4,8	7 ns
K4M511633C-BN75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	33554432 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4M56323LG-HF60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	167 MHz	Not Qualified	268435456 bit	e3		.001 Amp	1,2,4,8	5.4 ns
K4T2G084QA-HLE6T	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	320 mA	268435456 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM	R-PBGA-B68		333 MHz	Not Qualified	2147483648 bit			.008 Amp	4,8	.45 ns
K4M281633H-BF1HT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	60 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit	e3		.0005 Amp	1,2,4,8	7 ns
K4T51043QE-ZCE6T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	333 MHz	Not Qualified	536870912 bit	e1	260	.008 Amp	4,8	.45 ns
K4M641633K-RL1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	4194304 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	7 ns
K4M56163PG-RF90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	65 mA	16777216 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	268435456 bit			.00001 Amp	1,2,4,8	7 ns
K4M28163LF-RE75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	155 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	134217728 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4N51163QC-GC25	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3	400 MHz	Not Qualified	536870912 bit	e1			4,8	.4 ns
K4M563233E-EG1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	290 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		105 MHz	Not Qualified	268435456 bit			.0012 Amp	1,2,4,8	7 ns
K4M28163PF-BG90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	85 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	134217728 bit			.0003 Amp	1,2,4,8	7 ns
K4D263238G-VC36	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	392 mA	4194304 words	2,4,8	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM	S-PBGA-B144	3	275 MHz	Not Qualified	134217728 bit		260	.015 Amp	2,4,8	.6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.