FBGA DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
K4M511533E-PF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	33554432 words	1,2,4,8,FP	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54	3	105 MHz	Not Qualified	536870912 bit		260	.0015 Amp	1,2,4,8	7 ns
K4T51163QG-HCE6T	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	235 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	Tin/Silver/Copper (Sn97.0Ag2.5Cu0.5)	BOTTOM	R-PBGA-B84	3	333 MHz	Not Qualified	536870912 bit	e1	260	.008 Amp	4,8	.45 ns
K4M28323LH-FL60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	4194304 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	5.4 ns
K4W2G1646C-HC11	Samsung	GDDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	285 mA	134217728 words	8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM	R-PBGA-B96		933 MHz	Not Qualified	2147483648 bit		260	.012 Amp	8	.195 ns
K4S56323LF-HR1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	7 ns
K4T51083QE-ZLCC	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	67108864 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B60	1	200 MHz	Not Qualified	536870912 bit	e3		.0045 Amp	4,8	.6 ns
K4M51163LC-BG1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	33554432 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	7 ns
K4R761869A-GCN1	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		33554432 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B92	3		Not Qualified	603979776 bit	e1	260			32 ns
K4M51153LE-YF80	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	185 mA	33554432 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		125 MHz	Not Qualified	536870912 bit	e0		.0015 Amp	1,2,4,8	6 ns
K4J10324QD-HC12T	Samsung	DDR3 DRAM		136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	780 mA	33554432 words	4,8	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm		3-STATE	32MX32	32M		TIN SILVER COPPER	BOTTOM	R-PBGA-B136	3	800 MHz	Not Qualified	1073741824 bit	e1	260	.085 Amp	4,8	.23 ns
K4T51163QG-HPD5T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	235 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	R-PBGA-B84	3	267 MHz	Not Qualified	536870912 bit		260	.0045 Amp	4,8	.5 ns
K4J52324QC-BC20	Samsung	DDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	830 mA	16777216 words	4,8	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B136	1	500 MHz	Not Qualified	536870912 bit	e3		.08 Amp	4,8	.35 ns
K4M511633E-PL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	350 mA	33554432 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54	3	133 MHz	Not Qualified	536870912 bit		260	.0015 Amp	1,2,4,8	5.4 ns
K4T51083QQ-BCE7T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	90 mA	67108864 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM	R-PBGA-B60		400 MHz	Not Qualified	536870912 bit			.008 Amp	4,8	.4 ns
K4M28323PH-FC1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	95 mA	4194304 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	134217728 bit			.0003 Amp	1,2,4,8	7 ns
K4T51163QE-ZDE6	Samsung	CACHE DRAM MODULE	INDUSTRIAL	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	240 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	R-PBGA-B84	3	333 MHz	Not Qualified	536870912 bit		260	.008 Amp	4,8	.45 ns
K4M56323LG-HL60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	167 MHz	Not Qualified	268435456 bit	e3		.001 Amp	1,2,4,8	5.4 ns
K4M28163LF-RN1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	134217728 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4U52324QE-BC09T	Samsung	GDDR4 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	1130 mA	16777216 words	8	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM	R-PBGA-B136		1100 MHz	Not Qualified	536870912 bit			.116 Amp	8	.2 ns
K4S643233H-FN1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	2097152 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		105 MHz	Not Qualified	67108864 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4S51163PF-YF90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	33554432 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	536870912 bit	e0		.0006 Amp	1,2,4,8	7 ns
K4M28163PH-RF1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	85 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit			.00001 Amp	1,2,4,8	7 ns
K4D553235F-VC25	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	368 mA	8388608 words	2,4,8	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	S-PBGA-B144	3	400 MHz	Not Qualified	268435456 bit		260		2,4,8	.45 ns
K4M28323LH-FF60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	4194304 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	5.4 ns
K4M28163LF-RL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	155 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	134217728 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4M283233H-HG75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	130 mA	4194304 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	7.5 ns
K4S643233H-HG1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	2097152 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	R-PBGA-B90		105 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	7 ns
K4X51163PE-LGC6T	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	33554432 words	2,4,8,16	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B60		166 MHz	Not Qualified	536870912 bit			.000015 Amp	2,4,8,16	5.5 ns
K4D26323QG-VC33T	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	410 mA	4194304 words	2,4,8	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM	S-PBGA-B144		300 MHz	Not Qualified	134217728 bit			.01 Amp	2,4,8	.55 ns
K4T51043QG-HLE7T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	210 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	R-PBGA-B60		400 MHz	Not Qualified	536870912 bit			.005 Amp	4,8	.4 ns
K4T1G044QF-BCF7	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	156 mA	268435456 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM	R-PBGA-B60	3	400 MHz	Not Qualified	1073741824 bit		260		4,8	.4 ns
K4M56323LG-FL60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90	1	167 MHz	Not Qualified	268435456 bit			.001 Amp	1,2,4,8	5.4 ns
K4S561633F-XE75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	185 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	268435456 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4M281633F-RL1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	134217728 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4T1G084QG-BPE7T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	135 mA	134217728 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM	R-PBGA-B60		400 MHz	Not Qualified	1073741824 bit				4,8	.4 ns
K4M64163PH-BF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	60 mA	4194304 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	67108864 bit			.0003 Amp	1,2,4,8	6 ns
K4M28163PH-BE90T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	85 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit	e3		.00001 Amp	1,2,4,8	7 ns
K4S511633F-YC1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	280 mA	33554432 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	536870912 bit	e0		.001 Amp	1,2,4,8	7 ns
K4T51163QE-ZID5T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	240 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B84	1	266 MHz	Not Qualified	536870912 bit	e3		.008 Amp	4,8	.5 ns
K4T28163QO-HCF80	Samsung	DDR2 DRAM	OTHER	84	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	205 mA	8388608 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM	R-PBGA-B84		533 MHz	Not Qualified	134217728 bit		260	.008 Amp	4,8	.35 ns
K4M56323LG-HL7L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	160 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	133 MHz	Not Qualified	268435456 bit	e3		.001 Amp	1,2,4,8	5.4 ns
K4M28323LH-FG60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	4194304 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	5.4 ns
K4B2G0846E-MCF7T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	268435456 words		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM	R-PBGA-B78		400 MHz	Not Qualified	2147483648 bit			.02 Amp		.4 ns
K4S563233F-HE60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	5.4 ns
K4N56163QG-GC2AT	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	370 mA	16777216 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM	R-PBGA-B84		350 MHz	Not Qualified	268435456 bit		240	.01 Amp	4,8	.45 ns
K4M56163LG-RN75T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	16777216 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B54	1	133 MHz	Not Qualified	268435456 bit			.001 Amp	1,2,4,8	5.4 ns
K4S64323LH-FN60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	2097152 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	67108864 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4M281633F-RG75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	134217728 bit	e0		.0005 Amp	1,2,4,8	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.