FBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
K4X56323PG-7EC3T	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	8388608 words	2,4,8,16	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	268435456 bit			.0003 Amp	2,4,8,16	6 ns
K4M56323PG-HE90T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	111 MHz	Not Qualified	268435456 bit	e3		.0003 Amp	1,2,4,8	7 ns
K4T1G084QF-BCF7	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	160 mA	134217728 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM	R-PBGA-B60	3	400 MHz	Not Qualified	1073741824 bit		260		4,8	.4 ns
K4M51323PC-SE90	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	16777216 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90	1	111 MHz	Not Qualified	536870912 bit			.0003 Amp	1,2,4,8	7 ns
K4X56323PG-7ECAT	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	125 mA	8388608 words	2,4,8,16	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	268435456 bit			.0003 Amp	2,4,8,16	6 ns
K4M51323PC-SF75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	16777216 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90	1	133 MHz	Not Qualified	536870912 bit			.0003 Amp	1,2,4,8	6 ns
K4S56323LF-HL60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	5.4 ns
K4M281633H-RL1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	60 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	7 ns
K4T1G044QA-ZCE6	Samsung	DDR2 DRAM		68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		268435456 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM	R-PBGA-B68	3	333 MHz	Not Qualified	1073741824 bit	e1	260		4,8	.45 ns
K4M28163PH-RC1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	85 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit			.00001 Amp	1,2,4,8	7 ns
K4S563233F-HL1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	7 ns
K4T1G164QD-ZCCC	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	245 mA	67108864 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M		MATTE TIN	BOTTOM	R-PBGA-B84	1	200 MHz	Not Qualified	1073741824 bit	e3		.015 Amp	4,8	.6 ns
K4J55323QF-GC15T	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	1055 mA	8388608 words	4	COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	S-PBGA-B144		667 MHz	Not Qualified	268435456 bit			.14 Amp	4	.26 ns
K4M281633F-BC1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	3	105 MHz	Not Qualified	134217728 bit		260	.0005 Amp	1,2,4,8	7 ns
K4M513233C-DL7L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4S513233F-MC1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	280 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	536870912 bit	e0		.001 Amp	1,2,4,8	7 ns
K4J55323QF-GL20	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	950 mA	8388608 words	4	COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	S-PBGA-B144		500 MHz	Not Qualified	268435456 bit			.13 Amp	4	.35 ns
K4X56163PE-LGC0	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	80 mA	16777216 words	2,4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B60		66 MHz	Not Qualified	268435456 bit	e0		.0003 Amp	2,4,8	2 ns
K4M51323LC-SG7LT	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	16777216 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4M51163PC-RG1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	33554432 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	536870912 bit			.0003 Amp	1,2,4,8	7 ns
K4B2G0446E-BYK0T	Samsung	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	130 mA	536870912 words	8	COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM	R-PBGA-B78		800 MHz	Not Qualified	2147483648 bit			.01 Amp	8	.225 ns
K4T28163QO-HCE7T	Samsung	DDR2 DRAM	OTHER	84	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	8388608 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM	R-PBGA-B84		400 MHz	Not Qualified	134217728 bit		260	.008 Amp	4,8	.4 ns
K4M511533E-YF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	33554432 words	1,2,4,8,FP	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	536870912 bit	e0		.0015 Amp	1,2,4,8	7 ns
K4T1G164QE-HLF7T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	67108864 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM	R-PBGA-B84		400 MHz	Not Qualified	1073741824 bit			.005 Amp	4,8	.4 ns
K4T1G164QF-BCE6T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	165 mA	67108864 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM	R-PBGA-B84		333 MHz	Not Qualified	1073741824 bit			.01 Amp	4,8	.45 ns
K4M28163PH-RG1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	85 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit			.00001 Amp	1,2,4,8	7 ns
K4B4G1646B-HCF80	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	156 mA	268435456 words	8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M	0 Cel		BOTTOM	R-PBGA-B96		533 MHz	Not Qualified	4294967296 bit			.015 Amp	8	.3 ns
K4M28163LH-RL1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	7 ns
K4M28163PH-BG1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	85 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit	e3		.00001 Amp	1,2,4,8	7 ns
K4U52324QE-BC07T	Samsung	GDDR4 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	1310 mA	16777216 words	8	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM	R-PBGA-B136		1400 MHz	Not Qualified	536870912 bit			.135 Amp	8	.16 ns
K4S64323LH-FC1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	2097152 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		105 MHz	Not Qualified	67108864 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4T1G084QA-ZCD5	Samsung	DDR2 DRAM		68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		134217728 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM	R-PBGA-B68	3	267 MHz	Not Qualified	1073741824 bit	e1	260		4,8	.5 ns
K4M64163PK-RF90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA	4194304 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	67108864 bit			.0003 Amp	1,2,4,8	7 ns
K4V1G323PC-XGC6000	Samsung	DDR1 DRAM	OTHER	152	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	33554432 words	2,4,8,16	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA152,21X21,25	DRAMs	.635 mm	85 Cel	3-STATE	32MX32	32M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B152	1	166 MHz	Not Qualified	1073741824 bit	e3		.0006 Amp	2,4,8,16	5.5 ns
K4M56163LG-RF1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	16777216 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	268435456 bit			.001 Amp	1,2,4,8	7 ns
K4S643233H-HE75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	135 mA	2097152 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	R-PBGA-B90	3	133 MHz	Not Qualified	67108864 bit		260	.0005 Amp	1,2,4,8	6 ns
K4T28163QO-HCF8	Samsung	DDR2 DRAM	OTHER	84	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	205 mA	8388608 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM	R-PBGA-B84		533 MHz	Not Qualified	134217728 bit		260	.008 Amp	4,8	.35 ns
K4M513233C-DN7L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4T51043QE-ZLE6T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	333 MHz	Not Qualified	536870912 bit	e1	260	.005 Amp	4,8	.45 ns
K4T51163QB-GCE6	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	32MX16	32M		Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B84		333 MHz	Not Qualified	536870912 bit	e0			4,8	.45 ns
K4M563233G-FL75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	160 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90	1	133 MHz	Not Qualified	268435456 bit			.001 Amp	1,2,4,8	5.4 ns
K4M64163LK-BF1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	4194304 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	7 ns
K4M513233C-DF75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4M513233C-SF75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4S643233H-HC75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	135 mA	2097152 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	6 ns
K4T51163QC-ZLE6	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	301 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B84	1	333 MHz	Not Qualified	536870912 bit	e3		.005 Amp	4,8	.45 ns
K4S64163LH-BL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	115 mA	4194304 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	5.4 ns
K4T51163QI-HLE60	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	185 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B84	1	333 MHz	Not Qualified	536870912 bit	e3		.008 Amp	4,8	.45 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.