FBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
K4X56323PG-8ECA	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	125 mA	8388608 words	2,4,8,16	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	268435456 bit			.0003 Amp	2,4,8,16	6 ns
K4S511533F-YL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	160 mA	33554432 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	536870912 bit	e0		.001 Amp	1,2,4,8	5.4 ns
K4S56163LF-XF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	165 mA	16777216 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	268435456 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4T2G084QM-ZCE6T	Samsung	CACHE DRAM MODULE	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		268435456 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B68	1	333 MHz	Not Qualified	2147483648 bit	e3	260		4,8	.45 ns
K4M64163LK-RF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	115 mA	4194304 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54	3	133 MHz	Not Qualified	67108864 bit		240	.0005 Amp	1,2,4,8	5.4 ns
K1C3216B2E-FI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	3		Not Qualified	33554432 bit	e1	240	.00003 Amp		70 ns
K4M641633K-RN1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	4194304 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	7 ns
K4T51043QI-HCE6T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	115 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B60	1	333 MHz	Not Qualified	536870912 bit	e1	260	.008 Amp	4,8	.45 ns
K4T1G164QG-BPF7T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	67108864 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM	R-PBGA-B84		400 MHz	Not Qualified	1073741824 bit			.005 Amp	4,8	.4 ns
K4T51163QE-ZIF7	Samsung	CACHE DRAM MODULE	INDUSTRIAL	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	280 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B84	1	400 MHz	Not Qualified	536870912 bit	e3		.008 Amp	4,8	.4 ns
K4M56323LG-HG75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	160 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	133 MHz	Not Qualified	268435456 bit	e3		.001 Amp	1,2,4,8	5.4 ns
K4M28323PH-HC90	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	95 mA	4194304 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	134217728 bit			.0003 Amp	1,2,4,8	7 ns
K4S64163LH-RL1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	4194304 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	67108864 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4B2G1646B-HIH9	Samsung	CACHE DRAM MODULE	INDUSTRIAL	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	300 mA	134217728 words	8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX16	128M	-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B96	1	667 MHz	Not Qualified	2147483648 bit	e3	260	.012 Amp	8	.255 ns
K4M28323LH-HN75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	130 mA	4194304 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B90	3	133 MHz	Not Qualified	134217728 bit	e1	260	.0005 Amp	1,2,4,8	5.4 ns
K4T1G044QQ-HYE6	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	220 mA	268435456 words	4,8	COMMON	1.55	1.55	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM	R-PBGA-B60	3	333 MHz	Not Qualified	1073741824 bit		260		4,8	.45 ns
K4B2G0446C-HCH9	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	536870912 words	8	COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B78	3	667 MHz	Not Qualified	2147483648 bit	e1	260	.012 Amp	8
K4B2G0846E-BYK00	Samsung	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	135 mA	268435456 words	8	COMMON	1.35	1.35	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM	R-PBGA-B78		800 MHz	Not Qualified	2147483648 bit			.01 Amp	8	.225 ns
K4M56323LG-FN60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90	1	167 MHz	Not Qualified	268435456 bit			.001 Amp	1,2,4,8	5.4 ns
K4M511633E-YF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	335 mA	33554432 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	536870912 bit	e0		.0015 Amp	1,2,4,8	7 ns
K4T1G044QC-ZLD5T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	260 mA	268435456 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	267 MHz	Not Qualified	1073741824 bit	e1	260		4,8	.5 ns
K4T51163QE-ZCF7	Samsung	DDR2 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	280 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	R-PBGA-B90	3	400 MHz	Not Qualified	536870912 bit		260	.008 Amp	4,8	.4 ns
K4M641633K-RF1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	4194304 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	7 ns
K4M28163PH-RG90T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	85 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit			.00001 Amp	1,2,4,8	7 ns
K4M64163PK-RC1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA	4194304 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	67108864 bit			.0003 Amp	1,2,4,8	7 ns
K4M28323LH-FL7L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	4194304 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	5.4 ns
K4T2G084QA-HLE60	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	320 mA	268435456 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM	R-PBGA-B68		333 MHz	Not Qualified	2147483648 bit			.008 Amp	4,8	.45 ns
K4S56323LF-HS75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	6 ns
K4S64323LH-FG60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	2097152 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	67108864 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4S641633H-BL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	135 mA	4194304 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	5.4 ns
K4B8G1646B-MCK0	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	251 mA		8	COMMON	1.5	1.5		GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE			0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B96	3	800 MHz	Not Qualified	8589934592 bit	e1	260	.03 Amp	8	.225 ns
K4M281633H-BN1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	60 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit	e3		.0005 Amp	1,2,4,8	7 ns
K1C1616B8B-FI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	1048576 words		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	3		Not Qualified	16777216 bit	e1	240	.00003 Amp		70 ns
K4T51083QE-ZLD5T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	67108864 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B60	1	266 MHz	Not Qualified	536870912 bit	e3		.0045 Amp	4,8	.5 ns
K4T1G164QQ-HCE6T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	245 mA	67108864 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM	R-PBGA-B84		333 MHz	Not Qualified	1073741824 bit			.015 Amp	4,8	.45 ns
K4M281633H-RN1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	60 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	7 ns
K4S56323PF-FF75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	160 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	268435456 bit	e0		.0003 Amp	1,2,4,8	6 ns
K4M56323LG-HF75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	160 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	133 MHz	Not Qualified	268435456 bit	e3		.001 Amp	1,2,4,8	5.4 ns
K4T51163QC-ZLD5	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	270 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B84	1	266 MHz	Not Qualified	536870912 bit	e3		.0045 Amp	4,8	.5 ns
K4N51163QC-GC33T	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	R-PBGA-B84		300 MHz	Not Qualified	536870912 bit		240	.01 Amp	4,8	.47 ns
K1S64161CC-BI70	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	2.9	2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B48	1		Not Qualified	67108864 bit	e3		.00018 Amp		70 ns
K4M51323LC-DN7LT	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	16777216 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4M641633K-BL1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	4194304 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	67108864 bit	e3		.0005 Amp	1,2,4,8	7 ns
K4M28323PH-FC75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	4194304 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	134217728 bit			.0003 Amp	1,2,4,8	6 ns
K4T51043QG-HLD5	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	175 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	R-PBGA-B60		267 MHz	Not Qualified	536870912 bit			.0045 Amp	4,8	.5 ns
K4X56163PI-LGC6T	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	16777216 words	2,4,8,16	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	166 MHz	Not Qualified	268435456 bit	e1	240	.00001 Amp	2,4,8,16	5.5 ns
K4M513233C-DF7L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4M56323PG-FE90	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90	1	111 MHz	Not Qualified	268435456 bit			.0003 Amp	1,2,4,8	7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.