FBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
IS42S32400F-7BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B90			143 MHz		Not Qualified	134217728 bit			e1	30	260	.002 Amp	1,2,4,8		5.4 ns
IS42S16400J-7BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B54	3		143 MHz		Not Qualified	67108864 bit			e1	30	260	.002 Amp	1,2,4,8		5.4 ns
IS42S32400F-6BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel		BOTTOM		R-PBGA-B90			166 MHz		Not Qualified	134217728 bit						.002 Amp	1,2,4,8		5.4 ns
IS42S32400F-6BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM		R-PBGA-B90			166 MHz		Not Qualified	134217728 bit						.002 Amp	1,2,4,8		5.4 ns
K4B1G1646G-BCH9	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		170 mA	67108864 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B96	3		667 MHz		Not Qualified	1073741824 bit			e1	30	260	.01 Amp	4,8		.255 ns
K4T1G164QQ-HCE6	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		245 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84	3		333 MHz		Not Qualified	1073741824 bit					260	.015 Amp	4,8		.45 ns
IS42S83200G-7BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	33554432 words	1,2,4,8,FP		COMMON	3.3	3.3	8	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		BOTTOM		S-PBGA-B54			143 MHz		Not Qualified	268435456 bit						.004 Amp	1,2,4,8		5.4 ns
IS42S16800F-6BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		120 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel		BOTTOM		S-PBGA-B54			166 MHz		Not Qualified	134217728 bit						.002 Amp	1,2,4,8		5.4 ns
K4B1G1646G-BCMA	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		195 mA	67108864 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		MATTE TIN	BOTTOM		R-PBGA-B96	1		933 MHz		Not Qualified	1073741824 bit			e3		260	.01 Amp	4,8		.195 ns
K4B1G1646G-BCNB	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		MATTE TIN	BOTTOM		R-PBGA-B96	1		1066 MHz		Not Qualified	1073741824 bit			e3		260		4,8		.18 ns
IS42S16800F-7BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		100 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM		S-PBGA-B54			143 MHz		Not Qualified	134217728 bit						.002 Amp	1,2,4,8		5.4 ns
IS42S32800G-6BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-40 Cel		BOTTOM		R-PBGA-B90			166 MHz		Not Qualified	268435456 bit						.003 Amp	1,2,4,8		5.4 ns
K4B2G0846D-HCH9	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.255 ns
K4A8G085WB-BCPB	Samsung	DDR4 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		170 mA		4,8		COMMON	1.2	1.2		GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE			0 Cel		BOTTOM		R-PBGA-B78			1066 MHz		Not Qualified	8589934592 bit						.016 Amp	4,8		.18 ns
K4T1G164QF-BCE7	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84	3		400 MHz		Not Qualified	1073741824 bit					260	.01 Amp	4,8		.4 ns
K4B1G0846G-BCH9	Samsung	DDR3 DRAM		78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	134217728 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B78	3		667 MHz		Not Qualified	1073741824 bit			e1	30	260		4,8		.255 ns
K4B2G0846C-HCH9	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		210 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	2147483648 bit			e1			.012 Amp	8
K4J10324QD-HJ1A	Samsung	DDR3 DRAM		136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1000 mA	33554432 words	4,8		COMMON	1.85	1.85	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm		3-STATE	32MX32	32M		TIN SILVER COPPER	BOTTOM		R-PBGA-B136	3		1000 MHz		Not Qualified	1073741824 bit			e1		260	.1 Amp	4,8		.2 ns
K4T51163QG-HCE6	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		235 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	Tin/Silver/Copper (Sn97.0Ag2.5Cu0.5)	BOTTOM		R-PBGA-B84	3		333 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.45 ns
K4T51163QI-HCE7	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B84	3		400 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.4 ns
K4B1G1646E-HCF8	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	67108864 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM		R-PBGA-B96	3		533 MHz		Not Qualified	1073741824 bit			e1		260	.01 Amp	4,8		.15 ns
K4B2G1646C-HCH9	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		245 mA	134217728 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B96	3		667 MHz		Not Qualified	2147483648 bit			e1	30	260	.012 Amp	4,8		.255 ns
K4M281633H-BN75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		70 mA	8388608 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1		133 MHz		Not Qualified	134217728 bit			e3			.0005 Amp	1,2,4,8		5.4 ns
K4S56163LF-XG75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	16777216 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54			133 MHz		Not Qualified	268435456 bit			e0			.0005 Amp	1,2,4,8		5.4 ns
K4T1G164QF-BCE6	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM		R-PBGA-B84	3		333 MHz		Not Qualified	1073741824 bit			e1	30	260	.01 Amp	4,8		.45 ns
K4T1G164QF-BIE6	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84	3		333 MHz		Not Qualified	1073741824 bit					260	.01 Amp	4,8		.45 ns
K4T51163QE-ZCE6	Samsung	DDR2 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		240 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B90	3		333 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.45 ns
K4W1G1646G-BC11	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		195 mA	67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		MATTE TIN	BOTTOM		R-PBGA-B96	1		933 MHz		Not Qualified	1073741824 bit			e3			.01 Amp	8		.195 ns
MT42L64M32D1LF-18IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA		4,8,16		COMMON		1.2,1.8		GRID ARRAY, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE			-40 Cel		BOTTOM		S-PBGA-B168			533 MHz		Not Qualified	2147483648 bit						.000025 Amp	4,8,16		5.5 ns
HYB18T1G800AFL-3S	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		1.9 V		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns
HYE18M512160BF-6	Infineon Technologies	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		R-PBGA-B60			166 MHz		Not Qualified	536870912 bit						.0007 Amp	2,4,8,16		5.5 ns
HYB18T256400AFL-3S	Infineon Technologies	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	145 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	64MX4	64M			BOTTOM	1	R-PBGA-B60		1.9 V	333 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	4,8	10.5 mm	.45 ns
HYB18T256400AC-5	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V		10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm	.6 ns
HYE18L256160BCL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		1.95 V		8 mm	Not Qualified	268435456 bit	1.65 V	AUTO/SELF REFRESH						12 mm	5.4 ns
HYB18T256160AFL-3S	Infineon Technologies	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM	1	R-PBGA-B84		1.9 V	333 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	4,8	12.5 mm	.45 ns
HYB18T1G800AC-3.7	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm			128MX8	128M			BOTTOM	1	R-PBGA-B68		1.9 V		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.5 ns
HYB18T512160AC-3	Infineon Technologies	DDR2 DRAM	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.5 mm	.45 ns
HYB18T256800AC-3	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V		10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm	.45 ns
HYB18M512160AF-7.5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		90 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60			133 MHz		Not Qualified	536870912 bit						.0005 Amp	2,4,8,16		6.5 ns
HYB18M512160BF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60			166 MHz		Not Qualified	536870912 bit						.0007 Amp	2,4,8,16		5.5 ns
HYE25L128800AC-8	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	85 Cel		16MX8	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			9 mm	6 ns
HYB18T256400AC-3.7	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V		10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm	.5 ns
HYB18T1G160AC-3	Infineon Technologies	DDR2 DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm			64MX16	64M			BOTTOM	1	R-PBGA-B92		1.9 V		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.45 ns
HYE18M512160AF-7.5	Infineon Technologies	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		90 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		R-PBGA-B60			133 MHz		Not Qualified	536870912 bit						.0005 Amp	2,4,8,16		6.5 ns
HYE18L256160BFL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V		8 mm	Not Qualified	268435456 bit	1.65 V	AUTO/SELF REFRESH	e1					12 mm	5.4 ns
HYE18L128160BF-7.5	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	133 MHz	8 mm	Not Qualified	134217728 bit	1.65 V	AUTO/SELF REFRESH	e1			.00035 Amp	1,2,4,8	12 mm	5.4 ns
HYB18T1G800AC-5	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm			128MX8	128M			BOTTOM	1	R-PBGA-B68		1.9 V		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.6 ns
HYB18M512160AF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60			166 MHz		Not Qualified	536870912 bit						.0005 Amp	2,4,8,16		5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.