FBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
HYE18M512160AF-6	Infineon Technologies	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		R-PBGA-B60			166 MHz		Not Qualified	536870912 bit						.0005 Amp	2,4,8,16		5.4 ns
HYB18T1G160AFL-5	Infineon Technologies	DDR2 DRAM	OTHER	92	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B92		1.9 V		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.6 ns
HYE18L128160BC-7.5	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54		1.95 V	133 MHz	8 mm	Not Qualified	134217728 bit	1.65 V	AUTO/SELF REFRESH	e0			.00035 Amp	1,2,4,8	12 mm	5.4 ns
HYE25L128800AC-7.5	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	85 Cel		16MX8	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			9 mm	5.4 ns
HYB18T1G400AFL-3	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		1.9 V		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.45 ns
HYB18T512400AC-3S	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						10.5 mm	.45 ns
HYB18T256800AC-3.7	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V		10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm	.5 ns
HYB18L128160BF-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	133 MHz	8 mm	Not Qualified	134217728 bit	1.65 V	AUTO/SELF REFRESH				.00035 Amp	1,2,4,8	12 mm	5.4 ns
HYE18L256160BF-7.5	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	133 MHz	8 mm	Not Qualified	268435456 bit	1.65 V	AUTO/SELF REFRESH	e1			.00035 Amp	1,2,4,8	12 mm	5.4 ns
HYB18T1G400AC-3	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm			256MX4	256M			BOTTOM	1	R-PBGA-B68		1.9 V		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.45 ns
HYB25D256160CFL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.7 ns
HYB25D256160CFL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256400CFL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.7 ns
HYB25L128800AC-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		16MX8	16M	0 Cel		BOTTOM	1	R-PBGA-B54		2.7 V		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			9 mm	6 ns
HYB25D256160CFL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.6 ns
HYB25D256400CF-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256160CF-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256800CF-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256160CFL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256800CFL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256800CFL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256800CFL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.7 ns
HYB25D256400CFL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256400CFL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256400CFL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.6 ns
HYB25D256400CF-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256160CF-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D256800CF-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25L128800AC-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		16MX8	16M	0 Cel		BOTTOM	1	R-PBGA-B54		2.7 V		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			9 mm	5.4 ns
HYB25D256800CFL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.6 ns
UPD488385FB-C60-53BF1	Renesas Electronics	RAMBUS DRAM		74	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		570 mA	4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA74,7X16,30	DRAMs	.75 mm		3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B74			600 MHz		Not Qualified	75497472 bit			e0			.006 Amp
UPD488385FB-C80-45BF1	Renesas Electronics	RAMBUS DRAM		74	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		700 mA	4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA74,7X16,30	DRAMs	.75 mm		3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B74			800 MHz		Not Qualified	75497472 bit			e0			.006 Amp
UPD488385FB-C80-40BF1	Renesas Electronics	RAMBUS DRAM		74	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		700 mA	4194304 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA74,7X16,30	DRAMs	.75 mm		3-STATE	4MX18	4M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B74			800 MHz		Not Qualified	75497472 bit			e0			.006 Amp
K4S643233H-HN75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	2097152 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM		R-PBGA-B90			133 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		6 ns
K4S56323PF-FF1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	8388608 words	1,2,4,8,FP		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90			111 MHz		Not Qualified	268435456 bit			e0			.0003 Amp	1,2,4,8		7 ns
K4M28163LH-BL1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		120 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1		111 MHz		Not Qualified	134217728 bit			e3			.0005 Amp	1,2,4,8		7 ns
K4M283233H-FL60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90			166 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		60 ns
K4B4G0446A-HYF8T	Samsung	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		145 mA	1073741824 words	8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	4294967296 bit					260	.015 Amp	8		.3 ns
K4M51163LC-BG1HT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	33554432 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54			111 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		7 ns
K4B2G0446E-BCK0T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.225 ns
K4D553235F-GC2A	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		342 mA	8388608 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM		S-PBGA-B144	1		300 MHz		Not Qualified	268435456 bit							2,4,8		.55 ns
K4T51163QC-ZCE6T	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B84	3		333 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.45 ns
K4M28323LH-HG7LT	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		120 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90			133 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		5.4 ns
K4X51323PC-7ECA	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	16777216 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1		111 MHz		Not Qualified	536870912 bit			e3			.0003 Amp	2,4,8,16		6 ns
K4S64323LH-FG1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		100 mA	2097152 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90			105 MHz		Not Qualified	67108864 bit			e0			.0005 Amp	1,2,4,8		7 ns
K4T51083QG-HCCCT	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		175 mA	67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	536870912 bit						.0045 Amp	4,8		.6 ns
K4T51043QC-ZCE7	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1		400 MHz		Not Qualified	536870912 bit			e3			.008 Amp	4,8		.4 ns
K4S56163LF-ZG1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	16777216 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54			105 MHz		Not Qualified	268435456 bit						.0005 Amp	1,2,4,8		7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.