FBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
K4X51163PE-LGC30	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	115 mA	33554432 words	2,4,8,16	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B60		133 MHz	Not Qualified	536870912 bit			.000015 Amp	2,4,8,16	6 ns
K4T51083QG-HLCC	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	175 mA	67108864 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM	R-PBGA-B60		200 MHz	Not Qualified	536870912 bit			.0045 Amp	4,8	.6 ns
K4M56163PG-RF1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	65 mA	16777216 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	268435456 bit			.00001 Amp	1,2,4,8	7 ns
K4M56323LG-HN7LT	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	160 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	133 MHz	Not Qualified	268435456 bit	e3		.001 Amp	1,2,4,8	5.4 ns
K4T1G084QE-HCE6T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	155 mA	134217728 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM	R-PBGA-B60		333 MHz	Not Qualified	1073741824 bit				4,8	.45 ns
K4T1G044QQ-HCF7T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	245 mA	268435456 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM	R-PBGA-B60		400 MHz	Not Qualified	1073741824 bit				4,8	.4 ns
K4B2G0446D-HYK0	Samsung	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	130 mA	536870912 words	8	COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM	R-PBGA-B78		800 MHz	Not Qualified	2147483648 bit			.01 Amp	8	.225 ns
K4B2G0446D-HCF8T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	105 mA	536870912 words	8	COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM	R-PBGA-B78		533 MHz	Not Qualified	2147483648 bit			.012 Amp	8	.3 ns
K4J55323QI-BJ11T	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	1065 mA	8388608 words	4,8	COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	R-PBGA-B136	3	900 MHz	Not Qualified	268435456 bit		260	.09 Amp	4,8	.22 ns
K4S511533F-YC1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	33554432 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	536870912 bit	e0		.001 Amp	1,2,4,8	7 ns
K4M51163PC-BG75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	33554432 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	133 MHz	Not Qualified	536870912 bit	e3		.0003 Amp	1,2,4,8	6 ns
K4S643233H-HF1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	2097152 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	R-PBGA-B90		105 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	7 ns
K4S56323LF-HC60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	5.4 ns
K4T28163QO-HCE6	Samsung	DDR2 DRAM	OTHER	84	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	185 mA	8388608 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84		333 MHz	Not Qualified	134217728 bit	e1	260	.008 Amp	4,8	.45 ns
K4J10324KE-HC7A	Samsung	DDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	800 mA	33554432 words	4,8	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM	R-PBGA-B136		1300 MHz	Not Qualified	1073741824 bit		260	.11 Amp	4,8	.18 ns
K4M56163LG-BN1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	16777216 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	268435456 bit	e3		.001 Amp	1,2,4,8	7 ns
K4T2G084QA-HLE7T	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	350 mA	268435456 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM	R-PBGA-B68		400 MHz	Not Qualified	2147483648 bit			.008 Amp	4,8	.4 ns
K4B2G1646Q-BCH9T	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	193 mA	134217728 words	8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM	R-PBGA-B96		667 MHz	Not Qualified	2147483648 bit			.011 Amp	8	.255 ns
K4S561633F-XG75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	185 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	268435456 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4M51323LC-SN75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	16777216 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4M563233E-ML1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	290 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		105 MHz	Not Qualified	268435456 bit	e0		.0012 Amp	1,2,4,8	7 ns
K4B4G1646B-HCNBT	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		268435456 words	8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M	0 Cel		BOTTOM	R-PBGA-B96		1066 MHz	Not Qualified	4294967296 bit				8	.18 ns
K4R761869A-GCM8	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		33554432 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B92	3		Not Qualified	603979776 bit	e1	260			40 ns
K4T2G044QA-HLE6	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	320 mA	536870912 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM	R-PBGA-B68		333 MHz	Not Qualified	2147483648 bit			.008 Amp	4,8	.45 ns
K4S51163PF-PF90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	33554432 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	536870912 bit			.0006 Amp	1,2,4,8	7 ns
K4B2G0846B-HCF8T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	230 mA	268435456 words	8	COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B78	3	533 MHz	Not Qualified	2147483648 bit	e1	260	.012 Amp	8	.3 ns
K4S64323LH-FE1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	2097152 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		105 MHz	Not Qualified	67108864 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4D263238K-VC40	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	402 mA	4194304 words	2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B144	3	250 MHz	Not Qualified	134217728 bit	e1	260	.02 Amp	2,4,8	.6 ns
K4N51163QC-ZC25T	Samsung	CACHE DRAM MODULE	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	R-PBGA-B84		400 MHz	Not Qualified	536870912 bit		260		4,8	.4 ns
K4T1G044QC-ZLCC	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		268435456 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	200 MHz	Not Qualified	1073741824 bit	e1			4,8	.6 ns
K4X56163PG-FGC3	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	16777216 words	2,4,8,16	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	133 MHz	Not Qualified	268435456 bit	e1	260	.0003 Amp	2,4,8,16	6 ns
K4D26323QG-GC25T	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	475 mA	4194304 words	2,4,8	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM	S-PBGA-B144		400 MHz	Not Qualified	134217728 bit			.01 Amp	2,4,8	.45 ns
K4X56163PE-FGC2	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	80 mA	16777216 words	2,4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B60		100 MHz	Not Qualified	268435456 bit			.0003 Amp	2,4,8	2 ns
K4S563233F-HG1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	7 ns
K4M28163PH-RG75T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	90 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	1	133 MHz	Not Qualified	134217728 bit			.00001 Amp	1,2,4,8	6 ns
K4M513233C-DG7L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4M56323PG-FC75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90	1	133 MHz	Not Qualified	268435456 bit			.0003 Amp	1,2,4,8	6 ns
K4T51043QE-ZLD5	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B60	1	266 MHz	Not Qualified	536870912 bit	e3		.0045 Amp	4,8	.5 ns
K4T51083QB-GCE6	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		67108864 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B60		333 MHz	Not Qualified	536870912 bit	e0		.008 Amp	4,8	.45 ns
K1C3216B8E-FI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54	3		Not Qualified	33554432 bit	e1	240	.00003 Amp		70 ns
K4T1G084QG-BIE6T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	125 mA	134217728 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM	R-PBGA-B60		333 MHz	Not Qualified	1073741824 bit				4,8	.45 ns
K4S64163LH-RF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	4194304 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	67108864 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4S64163LH-BF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	115 mA	4194304 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	5.4 ns
K4M64163LK-BF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	4194304 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	7 ns
K4S56323LF-FN60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	268435456 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4M56163PG-RG75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	75 mA	16777216 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B54	1	133 MHz	Not Qualified	268435456 bit			.00001 Amp	1,2,4,8	6 ns
K4S641633H-RN1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	4194304 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	67108864 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4M51323PC-SE75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	16777216 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90	1	133 MHz	Not Qualified	536870912 bit			.0003 Amp	1,2,4,8	6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.