FBGA DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
K4X51163PC-FECA	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	135 mA	33554432 words	2,4,8,16	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B60	1	111 MHz	Not Qualified	536870912 bit	e3		.0003 Amp	2,4,8,16	6 ns
K4N56163QF-GC25T	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	430 mA	16777216 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM	R-PBGA-B84		400 MHz	Not Qualified	268435456 bit				4,8
K4T1G044QC-ZLCCT	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	240 mA	268435456 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	200 MHz	Not Qualified	1073741824 bit	e1	260		4,8	.6 ns
K4M511633E-PC1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	335 mA	33554432 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54	3	105 MHz	Not Qualified	536870912 bit		260	.0015 Amp	1,2,4,8	7 ns
K4W1G1646E-HC1AT	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		67108864 words	4,8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM	R-PBGA-B96		1000 MHz	Not Qualified	1073741824 bit				4,8	.18 ns
K4J52324QC-BC16	Samsung	DDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	860 mA	16777216 words	4,8	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B136	1	625 MHz	Not Qualified	536870912 bit	e3		.085 Amp	4,8	.29 ns
K4S511533F-YL1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	130 mA	33554432 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	536870912 bit	e0		.001 Amp	1,2,4,8	7 ns
K4X51323PE-8EC6T	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	16777216 words	2,4,8,16	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	536870912 bit			.0003 Amp	2,4,8,16	5.5 ns
K4M28163PH-BF90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	85 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit	e3		.00001 Amp	1,2,4,8	7 ns
K4N56163QG-GC2A	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	370 mA	16777216 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM	R-PBGA-B84		350 MHz	Not Qualified	268435456 bit			.01 Amp	4,8	.45 ns
K4T51163QI-HLE70	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B84	1	400 MHz	Not Qualified	536870912 bit	e3		.008 Amp	4,8	.4 ns
K4S51163LF-YF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	280 mA	33554432 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	536870912 bit	e0		.001 Amp	1,2,4,8	7 ns
K4N51163QE-ZC2A	Samsung	CACHE DRAM MODULE	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	250 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B84	1	350 MHz	Not Qualified	536870912 bit	e3		.008 Amp	4,8	.45 ns
K4M28163LF-BL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	155 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	5.4 ns
K4B4G0446A-HYH9T	Samsung	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	1073741824 words	8	COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM	R-PBGA-B78		667 MHz	Not Qualified	4294967296 bit		260	.015 Amp	8	.255 ns
K4T1G084QQ-HLE6T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	230 mA	134217728 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM	R-PBGA-B60		333 MHz	Not Qualified	1073741824 bit				4,8	.45 ns
K4M641633K-BG1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	4194304 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	67108864 bit	e3		.0005 Amp	1,2,4,8	7 ns
K4T51083QE-ZCE7T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	215 mA	67108864 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	400 MHz	Not Qualified	536870912 bit	e1	260	.008 Amp	4,8	.4 ns
K4M56323PG-HC75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	133 MHz	Not Qualified	268435456 bit	e3		.0003 Amp	1,2,4,8	6 ns
K4T51043QI-HLE70	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B60	1	400 MHz	Not Qualified	536870912 bit	e3	260		4,8	.4 ns
K4N56163QG-ZC25T	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	400 mA	16777216 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM	R-PBGA-B84		400 MHz	Not Qualified	268435456 bit		260	.01 Amp	4,8	.4 ns
K4T1G164QF-BCF8	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	195 mA	67108864 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM	R-PBGA-B84		533 MHz	Not Qualified	1073741824 bit		260	.01 Amp	4,8	.35 ns
K4M563233G-HL60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	166 MHz	Not Qualified	268435456 bit	e3		.001 Amp	1,2,4,8	5.4 ns
K4M56163LG-RN75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	16777216 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B54	1	133 MHz	Not Qualified	268435456 bit			.001 Amp	1,2,4,8	5.4 ns
K4S563233F-HN1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	7 ns
K4T1G084QD-ZLE6	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	240 mA	134217728 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M		MATTE TIN	BOTTOM	R-PBGA-B60	1	333 MHz	Not Qualified	1073741824 bit	e3			4,8	.45 ns
K4T1G164QQ-HLE6	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	245 mA	67108864 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM	R-PBGA-B84		333 MHz	Not Qualified	1073741824 bit			.008 Amp	4,8	.45 ns
K4B2G0446B-HCF8T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	210 mA	536870912 words	8	COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B78	3	533 MHz	Not Qualified	2147483648 bit	e1	260	.012 Amp	8	.3 ns
K4M56323LG-FG60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90	1	167 MHz	Not Qualified	268435456 bit			.001 Amp	1,2,4,8	5.4 ns
K4T1G084QC-ZLCCT	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	240 mA	134217728 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	200 MHz	Not Qualified	1073741824 bit	e1	260		4,8	.6 ns
K4M51163PC-BF1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	33554432 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B54	3	111 MHz	Not Qualified	536870912 bit	e1	260	.0003 Amp	1,2,4,8	7 ns
K4D263238G-GC33	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	424 mA	4194304 words	2,4,8	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B144		300 MHz	Not Qualified	134217728 bit	e0		.015 Amp	2,4,8	.55 ns
K4J52324QE-BJ11T	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	1270 mA	16777216 words	4,8	COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM	R-PBGA-B136		900 MHz	Not Qualified	536870912 bit			.1 Amp	4,8	.22 ns
K4M64163PK-BG1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA	4194304 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	67108864 bit	e3		.0003 Amp	1,2,4,8	7 ns
K4T51043QC-ZLF7T	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	R-PBGA-B63	3	400 MHz	Not Qualified	536870912 bit		260		4,8	.4 ns
K4B4G0846B-HCH9T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	536870912 words	8	COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel		BOTTOM	R-PBGA-B78		667 MHz	Not Qualified	4294967296 bit			.015 Amp	8	.255 ns
K4T1G044QC-ZCE6T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	280 mA	268435456 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	333 MHz	Not Qualified	1073741824 bit	e1	260		4,8	.45 ns
K4W1G1646E-HC19T	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	67108864 words	4,8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM	R-PBGA-B96		533 MHz	Not Qualified	1073741824 bit			.01 Amp	4,8	.3 ns
K4M28163LH-BL1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit	e3		.0005 Amp	1,2,4,8	7 ns
K4M51153LE-PF80	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	185 mA	33554432 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54	3	125 MHz	Not Qualified	536870912 bit		260	.0015 Amp	1,2,4,8	6 ns
K4J55323QF-GC16T	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	970 mA	8388608 words	4	COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	S-PBGA-B144		600 MHz	Not Qualified	268435456 bit			.135 Amp	4	.29 ns
K4S56323LF-HS1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	170 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	268435456 bit			.0005 Amp	1,2,4,8	7 ns
K4B2G1646E-BCNB0	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	205 mA	134217728 words	8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM	R-PBGA-B96		1066 MHz	Not Qualified	2147483648 bit			.01 Amp	8	.18 ns
K4X56323PI-7EC3	Samsung	DDR1 DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	110 mA	8388608 words	2,4,8,16	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	268435456 bit			.00001 Amp	2,4,8,16	6 ns
K4M283233H-HL60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	4194304 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	60 ns
K4B2G1646C-HCK0	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	270 mA	134217728 words	4,8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM	R-PBGA-B96		800 MHz	Not Qualified	2147483648 bit		260	.012 Amp	4,8	.225 ns
K4B4G0446B-HYH9T	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	160 mA	1073741824 words	4,8	COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM	R-PBGA-B78		667 MHz	Not Qualified	4294967296 bit			.015 Amp	4,8	.255 ns
K4M28323LH-HG60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	4194304 words	1,2,4,8,FP	COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.