FBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
K4T51163QI-HLE6	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	185 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	R-PBGA-B84		333 MHz	Not Qualified	536870912 bit			.008 Amp	4,8	.45 ns
K4M28163LF-BR75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	155 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	5.4 ns
K4M281633F-BN1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	155 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	3	105 MHz	Not Qualified	134217728 bit		260	.0005 Amp	1,2,4,8	7 ns
K4T51163QE-ZPF7	Samsung	CACHE DRAM MODULE	INDUSTRIAL	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	280 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B84	1	400 MHz	Not Qualified	536870912 bit	e3		.008 Amp	4,8	.4 ns
K4T51043QC-ZCCC	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	220 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B60	3	200 MHz	Not Qualified	536870912 bit	e1	260	.008 Amp	4,8	.6 ns
K4D55323QF-VC33	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL		8388608 words	4	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	S-PBGA-B144	3	300 MHz	Not Qualified	268435456 bit		260			.55 ns
K4T51043QE-ZLCC	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	R-PBGA-B60	3	200 MHz	Not Qualified	536870912 bit		260	.0045 Amp	4,8	.6 ns
K4M563233E-ME75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	320 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	268435456 bit	e0		.0012 Amp	1,2,4,8	5.4 ns
K4M513233C-DG75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4M28163LF-RR1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	134217728 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4S51163LF-PF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	280 mA	33554432 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54		111 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	7 ns
K4M28163LH-RF1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	7 ns
K4W2G1646C-HC12	Samsung	GDDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	270 mA	134217728 words	8	COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM	R-PBGA-B96		800 MHz	Not Qualified	2147483648 bit		260	.012 Amp	8	.225 ns
K4S64323LH-HL60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	2097152 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	5.4 ns
K4M56163PG-BF90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	65 mA	16777216 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	268435456 bit	e3		.00001 Amp	1,2,4,8	7 ns
K4R761869A-FCN1	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		33554432 words		COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	32MX18	32M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B92			Not Qualified	603979776 bit	e0				32 ns
K4M28163LF-BC1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B54		105 MHz	Not Qualified	134217728 bit			.0005 Amp	1,2,4,8	7 ns
K4J55323QF-GC20T	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	950 mA	8388608 words	4	COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	S-PBGA-B144		500 MHz	Not Qualified	268435456 bit			.13 Amp	4	.35 ns
K4S643233H-FG1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	2097152 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B90		105 MHz	Not Qualified	67108864 bit	e0		.0005 Amp	1,2,4,8	7 ns
K4T51163QE-ZPD5	Samsung	CACHE DRAM MODULE	INDUSTRIAL	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	240 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B84	1	266 MHz	Not Qualified	536870912 bit	e3		.008 Amp	4,8	.5 ns
K4T51043QC-ZCF7	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	240 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B60	1	400 MHz	Not Qualified	536870912 bit	e3		.008 Amp	4,8	.4 ns
K4M56163PG-BC90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	65 mA	16777216 words	1,2,4,8,FP	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	111 MHz	Not Qualified	268435456 bit	e3		.00001 Amp	1,2,4,8	7 ns
K4S56163LF-XE75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	165 mA	16777216 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	268435456 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K4T51163QG-HCD5T	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	235 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	R-PBGA-B84		267 MHz	Not Qualified	536870912 bit			.008 Amp	4,8	.5 ns
K4T1G084QA-ZCE6	Samsung	DDR2 DRAM		68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		134217728 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM	R-PBGA-B68	3	333 MHz	Not Qualified	1073741824 bit	e1	260		4,8	.45 ns
K4M56163LG-BL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	16777216 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel	MATTE TIN	BOTTOM	S-PBGA-B54	1	133 MHz	Not Qualified	268435456 bit	e3		.001 Amp	1,2,4,8	5.4 ns
K4X51163PC-LECA	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	135 mA	33554432 words	2,4,8,16	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B60	1	111 MHz	Not Qualified	536870912 bit			.0003 Amp	2,4,8,16	6 ns
K4R571669M-NCK7T	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		16777216 words		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B92		711 MHz	Not Qualified	268435456 bit	e0				45 ns
K4T51043QG-HLCCT	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	175 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	R-PBGA-B60		200 MHz	Not Qualified	536870912 bit			.0045 Amp	4,8	.6 ns
K4D55323QF-GC33	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL		8388608 words	4	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B144		300 MHz	Not Qualified	268435456 bit	e0				.55 ns
K4X51323PC-8ECA	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	135 mA	16777216 words	2,4,8,16	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	111 MHz	Not Qualified	536870912 bit	e3		.0003 Amp	2,4,8,16	6 ns
K4H280438C-TCB00	Samsung	DDR1 DRAM	COMMERCIAL	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	315 mA	33554432 words	2,4,8	COMMON	2.5	2.5	4	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel		BOTTOM	R-PBGA-B136	3	133 MHz	Not Qualified	134217728 bit		240	.004 Amp	2,4,8	.75 ns
K4M563233E-EN75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	320 mA	8388608 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	268435456 bit			.0012 Amp	1,2,4,8	5.4 ns
K4T51163QE-ZLF7	Samsung	DDR2 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	280 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	400 MHz	Not Qualified	536870912 bit	e3		.005 Amp	4,8	.4 ns
K4M641633K-RG75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	115 mA	4194304 words	1,2,4,8,FP	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	S-PBGA-B54	1	133 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	5.4 ns
K4T51043QG-HLE6T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	175 mA	134217728 words	4,8	COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	R-PBGA-B60		333 MHz	Not Qualified	536870912 bit			.005 Amp	4,8	.45 ns
K4M28323PH-FC90	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	95 mA	4194304 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	R-PBGA-B90		111 MHz	Not Qualified	134217728 bit			.0003 Amp	1,2,4,8	7 ns
K4M51323PC-SG1LT	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	150 mA	16777216 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90	1	111 MHz	Not Qualified	536870912 bit			.0003 Amp	1,2,4,8	7 ns
K4T51163QI-HCF7	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	200 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3	400 MHz	Not Qualified	536870912 bit	e1	260	.008 Amp	4,8	.4 ns
K4S64323LH-HE60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	120 mA	2097152 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	67108864 bit			.0005 Amp	1,2,4,8	5.4 ns
K4M28163LF-RR75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	155 mA	8388608 words	1,2,4,8,FP	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	S-PBGA-B54		133 MHz	Not Qualified	134217728 bit	e0		.0005 Amp	1,2,4,8	5.4 ns
K1S16161CA-FI70	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	1048576 words		COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel		BOTTOM	R-PBGA-B48	1		Not Qualified	16777216 bit			.00008 Amp		70 ns
K4M51163LE-PC1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	320 mA	33554432 words	1,2,4,8,FP	COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B54	3	105 MHz	Not Qualified	536870912 bit		260	.0015 Amp	1,2,4,8	7 ns
K4T51163QE-ZCE6T	Samsung	DDR2 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	240 mA	33554432 words	4,8	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B90	1	333 MHz	Not Qualified	536870912 bit	e3		.008 Amp	4,8	.45 ns
K4X56323PI-7GC6	Samsung	DDR1 DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	140 mA	8388608 words	2,4,8,16	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-25 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	268435456 bit			.00001 Amp	2,4,8,16	5.5 ns
K4M513233C-SN7L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	16777216 words	1,2,4,8,FP	COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	536870912 bit			.001 Amp	1,2,4,8	5.4 ns
K4T1G084QQ-HYE6T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	225 mA	134217728 words	4,8	COMMON	1.55	1.55	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM	R-PBGA-B60	3	333 MHz	Not Qualified	1073741824 bit		260		4,8	.45 ns
K4T51083QE-ZLE7T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	215 mA	67108864 words	4,8	COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B60	1	400 MHz	Not Qualified	536870912 bit	e3		.005 Amp	4,8	.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.