SOP DRAM 313

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
LC338128M-80	Onsemi		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDSO-G32				Not Qualified	1048576 bit				.001 Amp		80 ns
LC321664BM-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOP40,.56	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		0 Cel		DUAL		R-PDSO-G40				Not Qualified	1048576 bit				.001 Amp		70 ns
LC321667BM-70	Onsemi	EDO DRAM	COMMERCIAL	40	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOP40,.56	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		0 Cel		DUAL		R-PDSO-G40				Not Qualified	1048576 bit				.001 Amp		70 ns
LC338128M-70	Onsemi		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDSO-G32				Not Qualified	1048576 bit				.001 Amp		70 ns
LC338128M-10	Onsemi		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		60 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDSO-G32				Not Qualified	1048576 bit				.001 Amp		100 ns
LC338128ML-10	Onsemi		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		60 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDSO-G32				Not Qualified	1048576 bit				.0001 Amp		100 ns
LC32464M-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	24	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	65536 words		COMMON	5	5	4	SMALL OUTLINE	SOP24,.4	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K		0 Cel		DUAL		R-PDSO-G24				Not Qualified	262144 bit				.001 Amp		80 ns
LC338128ML-70	Onsemi		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDSO-G32				Not Qualified	1048576 bit				.0001 Amp		70 ns
LC321664BM-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOP40,.56	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		0 Cel		DUAL		R-PDSO-G40				Not Qualified	1048576 bit				.001 Amp		80 ns
LC321667BM-80	Onsemi	EDO DRAM	COMMERCIAL	40	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOP40,.56	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		0 Cel		DUAL		R-PDSO-G40				Not Qualified	1048576 bit				.001 Amp		80 ns
LC338128ML-80	Onsemi		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDSO-G32				Not Qualified	1048576 bit				.0001 Amp		80 ns
HYB39S64402AT-10L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE				70 Cel		16MX4	16M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				7 ns
HYB39S64400AT-8L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE				70 Cel		16MX4	16M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				6 ns
HYB39S64400AT-10L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE				70 Cel		16MX4	16M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				7 ns
HYB39S64802AT-8L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE				70 Cel		8MX8	8M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				6 ns
HYB39S64162AT-8L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words	YES		3.3		16	SMALL OUTLINE				70 Cel		4MX16	4M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				6 ns
HYB39S64802AT-10L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE				70 Cel		8MX8	8M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				7 ns
HYB39S64800AT-8L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE				70 Cel		8MX8	8M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				6 ns
HYB3165400ATL	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE				70 Cel		16MX4	16M		0 Cel		DUAL	1	R-PDSO-G32	3.6 V			Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				60 ns
HYB39S64800AT-10L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE				70 Cel		8MX8	8M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				7 ns
HYB39S64402AT-8L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE				70 Cel		16MX4	16M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				6 ns
HYB39S64160AT-10L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words	YES		3.3		16	SMALL OUTLINE				70 Cel		4MX16	4M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				7 ns
HYB5116400BT-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOP	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	3.75 mm	7.75 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.001 Amp	17.27 mm	60 ns
HYB39S64162AT-10L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words	YES		3.3		16	SMALL OUTLINE				70 Cel		4MX16	4M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				7 ns
HYB39S64160AT-8L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words	YES		3.3		16	SMALL OUTLINE				70 Cel		4MX16	4M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V			Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				6 ns
HYB5116400BT-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOP	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	3.75 mm	7.75 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.001 Amp	17.27 mm	50 ns
HYB5116400BT-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOP	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	3.75 mm	7.75 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.001 Amp	17.27 mm	70 ns
SDA9251-2X	Infineon Technologies	VIDEO DRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS	100 mA	217088 words			5	5	4	SMALL OUTLINE	SOP28,.45	Other Memory ICs	1.27 mm	70 Cel		212KX4	212K		0 Cel	TIN LEAD	DUAL	3	R-PDSO-G28	5.5 V	2.54 mm	8.9 mm	Not Qualified	868352 bit	4.5 V	16 X 4 SAM PORT	e0	.005 Amp	18.3 mm	25 ns
THL32V4010BTG-7	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			4194304 words			3.3		32	SMALL OUTLINE						4MX32	4M				DUAL	1	R-PDSO-G72				Not Qualified	134217728 bit						70 ns
TC5117400BVK-60	Toshiba	OTHER DRAM		24	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words			5		4	SMALL OUTLINE						4MX4	4M				DUAL	1	R-PDSO-G24	5.5 V			Not Qualified	16777216 bit	4.5 V					60 ns
THL32V1010ATG-8L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words			3.3		32	SMALL OUTLINE						1MX32	1M				DUAL	1	R-PDSO-G72				Not Qualified	33554432 bit						80 ns
THM88020ATS-70	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words					8	SMALL OUTLINE						8MX8	8M				DUAL	1	R-PDSO-G30				Not Qualified	67108864 bit						70 ns
TC5116100BST-70	Toshiba	OTHER DRAM		26	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			16777216 words			5		1	SMALL OUTLINE						16MX1	16M				DUAL	1	R-PDSO-G26	5.5 V			Not Qualified	16777216 bit	4.5 V					70 ns
TC59SM758AFTL-80	Toshiba	SYNCHRONOUS DRAM		54	SOP		RECTANGULAR	PLASTIC/EPOXY		YES			GULL WING									SMALL OUTLINE											DUAL		R-PDSO-G54				Not Qualified
THL32V1070ATG-7	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words			3.3		32	SMALL OUTLINE						1MX32	1M				DUAL	1	R-PDSO-G72				Not Qualified	33554432 bit						70 ns
THL321010ATG-6L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words					32	SMALL OUTLINE						1MX32	1M				DUAL	1	R-PDSO-G72				Not Qualified	33554432 bit						60 ns
THL321010ATG-7	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words					32	SMALL OUTLINE						1MX32	1M				DUAL	1	R-PDSO-G72				Not Qualified	33554432 bit						70 ns
THL321010CTG-5	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words					32	SMALL OUTLINE						1MX32	1M				DUAL	1	R-PDSO-G72				Not Qualified	33554432 bit						50 ns
TC514900AFTL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	524288 words	NO	COMMON	5	5	9	SMALL OUTLINE	SO28(UNSPEC)	DRAMs		70 Cel	3-STATE	512KX9	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28				Not Qualified	4718592 bit			e0	.0003 Amp		70 ns
TH32V1010ATS-8	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words			3.3		32	SMALL OUTLINE						1MX32	1M				DUAL	1	R-PDSO-G72				Not Qualified	33554432 bit						80 ns
TC5116400BTR-50	Toshiba	OTHER DRAM		28	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words			5		4	SMALL OUTLINE						4MX4	4M				DUAL	1	R-PDSO-G28	5.5 V			Not Qualified	16777216 bit	4.5 V					50 ns
TH32V1010ATG-8	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words			3.3		32	SMALL OUTLINE						1MX32	1M				DUAL	1	R-PDSO-G72				Not Qualified	33554432 bit						80 ns
TC59S1604AFT-12	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	42	SOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words	YES		3.3		4	SMALL OUTLINE				70 Cel		4MX4	4M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G42	3.6 V			Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			9 ns
TC5117400BVK-70	Toshiba	OTHER DRAM		24	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words			5		4	SMALL OUTLINE						4MX4	4M				DUAL	1	R-PDSO-G24	5.5 V			Not Qualified	16777216 bit	4.5 V					70 ns
THL321010ATS-6L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words					32	SMALL OUTLINE						1MX32	1M				DUAL	1	R-PDSO-G72				Not Qualified	33554432 bit						60 ns
THM81620TS-80	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			16777216 words					8	SMALL OUTLINE						16MX8	16M				DUAL	1	R-PDSO-G30				Not Qualified	134217728 bit						80 ns
THL321010ATG-8	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words					32	SMALL OUTLINE						1MX32	1M				DUAL	1	R-PDSO-G72				Not Qualified	33554432 bit						80 ns
THL32V4010BTG-6	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			4194304 words			3.3		32	SMALL OUTLINE						4MX32	4M				DUAL	1	R-PDSO-G72				Not Qualified	134217728 bit						60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.