SOP DRAM 313

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC5116100BTR-50	Toshiba	OTHER DRAM		28	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			16777216 words				5		1	SMALL OUTLINE						16MX1	16M			DUAL	1	R-PDSO-G28		5.5 V				Not Qualified	16777216 bit	4.5 V								50 ns
THL321010CTS-5L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72						Not Qualified	33554432 bit									50 ns
THL321070ATG-6	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72						Not Qualified	33554432 bit									60 ns
TC514900AFT-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	524288 words		NO	COMMON	5	5	9	SMALL OUTLINE	SO28(UNSPEC)	DRAMs		70 Cel	3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	4718592 bit			e0			.001 Amp			100 ns
THL321010ATS-7	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72						Not Qualified	33554432 bit									70 ns
THL321010ATG-6	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words						32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72						Not Qualified	33554432 bit									60 ns
TC59SM754AFT-80	Toshiba	SYNCHRONOUS DRAM		54	SOP		RECTANGULAR	PLASTIC/EPOXY		YES			GULL WING										SMALL OUTLINE										DUAL		R-PDSO-G54						Not Qualified
THL321010ATG-7L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words						32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72						Not Qualified	33554432 bit									70 ns
THL324010TS-6	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			4194304 words						32	SMALL OUTLINE						4MX32	4M			DUAL	1	R-PDSO-G72						Not Qualified	134217728 bit									60 ns
TC5116400BVK-50	Toshiba	OTHER DRAM		24	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		4	SMALL OUTLINE						4MX4	4M			DUAL	1	R-PDSO-G24		5.5 V				Not Qualified	16777216 bit	4.5 V								50 ns
THM88020ATS-80	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words						8	SMALL OUTLINE						8MX8	8M			DUAL	1	R-PDSO-G30						Not Qualified	67108864 bit									80 ns
THL321010ATS-7L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72						Not Qualified	33554432 bit									70 ns
THL32V1070ATS-8	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words				3.3		32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72						Not Qualified	33554432 bit									80 ns
TC5116400BFT-50	Toshiba	OTHER DRAM		28	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		4	SMALL OUTLINE						4MX4	4M			DUAL	1	R-PDSO-G28		5.5 V				Not Qualified	16777216 bit	4.5 V								50 ns
TC59S1608AFT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	42	SOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE				70 Cel		2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G42		3.6 V				Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0						8.5 ns
TC5116400BFT-70	Toshiba	OTHER DRAM		28	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		4	SMALL OUTLINE						4MX4	4M			DUAL	1	R-PDSO-G28		5.5 V				Not Qualified	16777216 bit	4.5 V								70 ns
THM98020ATS-80	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words						9	SMALL OUTLINE						8MX9	8M			DUAL	1	R-PDSO-G30						Not Qualified	75497472 bit									80 ns
THM88020CTS-50	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words						8	SMALL OUTLINE						8MX8	8M			DUAL	1	R-PDSO-G30						Not Qualified	67108864 bit									50 ns
THM88020ATS-60	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words						8	SMALL OUTLINE						8MX8	8M			DUAL	1	R-PDSO-G30						Not Qualified	67108864 bit									60 ns
THM98020ATS-60	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words						9	SMALL OUTLINE						8MX9	8M			DUAL	1	R-PDSO-G30						Not Qualified	75497472 bit									60 ns
THL321010ATS-8	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72						Not Qualified	33554432 bit									80 ns
TC59S1608AFT-12	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	42	SOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE				70 Cel		2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G42		3.6 V				Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0						9 ns
THM98020ATS-70	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words						9	SMALL OUTLINE						8MX9	8M			DUAL	1	R-PDSO-G30						Not Qualified	75497472 bit									70 ns
THM321000ATS-60	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72						Not Qualified	33554432 bit									60 ns
THM91620TS-60	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			16777216 words						9	SMALL OUTLINE						16MX9	16M			DUAL	1	R-PDSO-G30						Not Qualified	150994944 bit									60 ns
TC5116400BST-50	Toshiba	OTHER DRAM		26	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		4	SMALL OUTLINE						4MX4	4M			DUAL	1	R-PDSO-G26		5.5 V				Not Qualified	16777216 bit	4.5 V								50 ns
9179YM-12LFT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS		1024 words		YES		3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		1KX1	1K	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G28	1	3.465 V	2.51 mm			Not Qualified	1024 bit	3.135 V	SELF CONTAINED REFRESH	e3	30	260			17.88 mm
9179YF-12LFT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS		1024 words		YES		3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		1KX1	1K	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G28	1	3.465 V	2.51 mm			Not Qualified	1024 bit	3.135 V	SELF CONTAINED REFRESH	e3	30	260			17.88 mm
UPD4216100G4-90	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOP28,.25	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	16777216 bit			e0			.001 Amp			90 ns
K4S560432C-TP7C	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V		133 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8		5.4 ns
KM44V16000BT-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE				70 Cel		16MX4	16M	0 Cel		DUAL	2	R-PDSO-G32		3.6 V				Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
K4S561632D-NL600	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE				70 Cel		16MX16	16M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V					268435456 bit	3 V	AUTO/SELF REFRESH							5 ns
K4S561632D-NL7C	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	TSSOP54,.46,16	DRAMs	.4 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V		133 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8		5.4 ns
K4H560838D-NCA2	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		2.7 V		133 MHz		Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8		.75 ns
K4S561632D-NL750	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE				70 Cel		16MX16	16M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V					268435456 bit	3 V	AUTO/SELF REFRESH							5.4 ns
KM416V4000A-L5	Samsung	FAST PAGE DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50		3.6 V				Not Qualified	67108864 bit	3 V								50 ns
KM48V104AS-7	Samsung	EDO DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING			16777216 words				3.3		4	SMALL OUTLINE						16MX4	16M			DUAL	1	R-PDSO-G50		3.6 V				Not Qualified	67108864 bit	3 V
KM416C4100C-6	Samsung	FAST PAGE DRAM	COMMERCIAL	50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		16	SMALL OUTLINE				70 Cel		4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		5.5 V				Not Qualified	67108864 bit	4.5 V								60 ns
K4S561632D-NL1H0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE				70 Cel		16MX16	16M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V					268435456 bit	3 V	AUTO/SELF REFRESH							6 ns
K4S560432C-TN7C	Samsung	SYNCHRONOUS DRAM	OTHER	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V		133 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8		5.4 ns
K4H560838D-NLA0	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	235 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		2.7 V		100 MHz		Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8		.8 ns
K4S1G0632M-TC1L	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	340 mA	268435456 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256MX4	256M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e0			.01 Amp	1,2,4,8		6 ns
KM416V254DLJ-5	Samsung	EDO DRAM	COMMERCIAL	40	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		3.3		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K	0 Cel		DUAL	1	R-PDSO-G40		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						26.04 mm	50 ns
KM416V4104A-L6	Samsung	EDO DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50		3.6 V				Not Qualified	67108864 bit	3 V								60 ns
KM416V4100A-6	Samsung	FAST PAGE DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50		3.6 V				Not Qualified	67108864 bit	3 V								60 ns
K4S1G0632M-TC1L0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		268435456 words		YES		3.3		4	SMALL OUTLINE				70 Cel		256MX4	256M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	240				6 ns
K4H560438D-NLA2	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		2.7 V		133 MHz		Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8		.75 ns
K4H560838D-NCA20	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE				70 Cel		32MX8	32M	0 Cel		DUAL	1	R-PDSO-G54		2.7 V				Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH							.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.