SOP DRAM 313

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
KM48V104AS-6	Samsung	EDO DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING			16777216 words				3.3		4	SMALL OUTLINE						16MX4	16M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V
K4S560832D-NL75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	133 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	5.4 ns
K4S560832D-NL1H	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	100 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	6 ns
K4H560838D-NLB3	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	325 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	2.7 V	166 MHz	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	.7 ns
K4S1G0632M-TC750	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		268435456 words		YES		3.3		4	SMALL OUTLINE				70 Cel		256MX4	256M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	240			5.4 ns
KM416V4000A-5	Samsung	FAST PAGE DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V							50 ns
K4S561632D-NL7C0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE				70 Cel		16MX16	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V			268435456 bit	3 V	AUTO/SELF REFRESH						5.4 ns
K4S1G0632M-TC1H0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		268435456 words		YES		3.3		4	SMALL OUTLINE				70 Cel		256MX4	256M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	240			6 ns
KM416V4000A-L6	Samsung	FAST PAGE DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V							60 ns
K4S560432D-NL7C	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	133 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	5.4 ns
K4S560832D-NC1L	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	100 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	6 ns
KM48V8000BT-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE				70 Cel		8MX8	8M	0 Cel		DUAL	2	R-PDSO-G32	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
KM48V8100BT-L5	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE				70 Cel		8MX8	8M	0 Cel		DUAL	2	R-PDSO-G32	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						50 ns
K4S561632D-NL60	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	TSSOP54,.46,16	DRAMs	.4 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	166 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	5 ns
K4H560838D-NCA0	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	235 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	2.7 V	100 MHz	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	.8 ns
K4H560838D-NLB0	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	2.7 V	133 MHz	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	.75 ns
KM48V104AS-L5	Samsung	EDO DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING			16777216 words				3.3		4	SMALL OUTLINE						16MX4	16M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V
KM416V4004A-L7	Samsung	EDO DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V							70 ns
K4H560438D-NCB3	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	2.7 V	166 MHz	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	.7 ns
KM416V4000A-6	Samsung	FAST PAGE DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V							60 ns
KM41V16000CT-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	24	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				3.3		1	SMALL OUTLINE				70 Cel		16MX1	16M	0 Cel		DUAL	2	R-PDSO-G24	3.6 V		Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
K4S561632D-NL1L0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE				70 Cel		16MX16	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V			268435456 bit	3 V	AUTO/SELF REFRESH						6 ns
KM48V8100BT-L45	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE				70 Cel		8MX8	8M	0 Cel		DUAL	2	R-PDSO-G32	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						45 ns
KM44V16100BT-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE				70 Cel		16MX4	16M	0 Cel		DUAL	2	R-PDSO-G32	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
KM416C4100C-5	Samsung	FAST PAGE DRAM	COMMERCIAL	50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		16	SMALL OUTLINE				70 Cel		4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50	5.5 V		Not Qualified	67108864 bit	4.5 V							50 ns
K4H560438D-NLA0	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	2.7 V	100 MHz	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	.8 ns
K4S561632A-TL80T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	125 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	6 ns
KM48V8000BT-L5	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE				70 Cel		8MX8	8M	0 Cel		DUAL	2	R-PDSO-G32	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						50 ns
K4H560838D-NCB3	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	325 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	2.7 V	166 MHz	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	.7 ns
KM416C4000C-6	Samsung	FAST PAGE DRAM	COMMERCIAL	50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		16	SMALL OUTLINE				70 Cel		4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50	5.5 V		Not Qualified	67108864 bit	4.5 V							60 ns
KM416V4104A-L7	Samsung	EDO DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V							70 ns
KM41C16000CT-L5	Samsung	FAST PAGE DRAM	COMMERCIAL	24	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				5		1	SMALL OUTLINE				70 Cel		16MX1	16M	0 Cel		DUAL	2	R-PDSO-G24	5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						50 ns
K4S561632D-NL75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	TSSOP54,.46,16	DRAMs	.4 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	133 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	5.4 ns
K4S560432D-NL1H	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	100 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	6 ns
KM48V8100BT-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE				70 Cel		8MX8	8M	0 Cel		DUAL	2	R-PDSO-G32	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
K4S560832D-NL7C	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	133 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	5.4 ns
KM416V4100A-L5	Samsung	FAST PAGE DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V							50 ns
K4S561632D-NC75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	TSSOP54,.46,16	DRAMs	.4 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	133 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	5.4 ns
KM416V4100A-7	Samsung	FAST PAGE DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V							70 ns
K4S560432D-NL75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	133 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	5.4 ns
K4H560438D-NCA0	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	2.7 V	100 MHz	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	.8 ns
KM416V4104A-7	Samsung	EDO DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V							70 ns
KM416V4004A-L6	Samsung	EDO DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE						4MX16	4M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V							60 ns
K4S560432D-NC75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	133 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	5.4 ns
KM416C4000C-5	Samsung	FAST PAGE DRAM	COMMERCIAL	50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		16	SMALL OUTLINE				70 Cel		4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50	5.5 V		Not Qualified	67108864 bit	4.5 V							50 ns
KM48V104AS-L6	Samsung	EDO DRAM		50	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING			16777216 words				3.3		4	SMALL OUTLINE						16MX4	16M			DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	67108864 bit	3 V
K4S561632D-NC1L0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE				70 Cel		16MX16	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V			268435456 bit	3 V	AUTO/SELF REFRESH						6 ns
K4S560432C-TE7C	Samsung	SYNCHRONOUS DRAM	OTHER	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	133 MHz	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.