SOP DRAM 313

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
MT4LC16M4A7TW-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	34	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	TSOP(UNSPEC)	DRAMs		70 Cel	3-STATE	16MX4	16M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0005 Amp		60 ns
MT4LC16M4T8TW-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	34	SOP	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	160 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	TSOP(UNSPEC)	DRAMs		70 Cel	3-STATE	16MX4	16M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0005 Amp		60 ns
MT45C8128DJ-10	Micron Technology		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		60 mA	131072 words			COMMON	5	5	8	SMALL OUTLINE	SO32(UNSPEC)	Other Memory ICs		70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32			Not Qualified	1048576 bit			e0	.0002 Amp		100 ns
MT4C10016TG-6V	Micron Technology	FAST PAGE DRAM	COMMERCIAL		SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SO(UNSPEC)	DRAMs		70 Cel	3-STATE	16MX1	16M		0 Cel	Tin/Lead (Sn/Pb)	DUAL					Not Qualified	16777216 bit			e0			60 ns
MT45C8128G-10	Micron Technology		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		60 mA	131072 words			COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32			Not Qualified	1048576 bit			e0	.0002 Amp		100 ns
MT4C10016TG-8VIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL		SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SO(UNSPEC)	DRAMs		85 Cel	3-STATE	16MX1	16M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL					Not Qualified	16777216 bit			e0			80 ns
MT4C10017TG-5	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL		SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SO(UNSPEC)	SRAMs		70 Cel	3-STATE	16MX1	16M		0 Cel	Tin/Lead (Sn/Pb)	DUAL					Not Qualified	16777216 bit			e0			50 ns
MT4LC16M4A7TW-5	Micron Technology	FAST PAGE DRAM	COMMERCIAL	34	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	TSOP(UNSPEC)	DRAMs		70 Cel	3-STATE	16MX4	16M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0005 Amp		50 ns
MT4LC8M8B6TW-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	34	SOP	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	165 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	TSOP(UNSPEC)	DRAMs		70 Cel	3-STATE	8MX8	8M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0005 Amp		60 ns
MT4C10016TG-6IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL		SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SO(UNSPEC)	DRAMs		85 Cel	3-STATE	16MX1	16M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL					Not Qualified	16777216 bit			e0			60 ns
MT4C10017TG-7V	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL		SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SO(UNSPEC)	SRAMs		70 Cel	3-STATE	16MX1	16M		0 Cel	Tin/Lead (Sn/Pb)	DUAL					Not Qualified	16777216 bit			e0			70 ns
MT42C256K16A1SG-6TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE				70 Cel	3-STATE	256KX16	256K		0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT	e0			60 ns
MT4LC8M8E1TW-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	34	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	115 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	TSOP(UNSPEC)	DRAMs		70 Cel	3-STATE	8MX8	8M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0005 Amp		70 ns
MT4C10017TG-8VIT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL		SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SO(UNSPEC)	SRAMs		85 Cel	3-STATE	16MX1	16M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL					Not Qualified	16777216 bit			e0			80 ns
MT4C10016TG-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL		SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SO(UNSPEC)	DRAMs		70 Cel	3-STATE	16MX1	16M		0 Cel	Tin/Lead (Sn/Pb)	DUAL					Not Qualified	16777216 bit			e0			70 ns
MT48LC4M16A2-8E	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	125 MHz	Not Qualified	67108864 bit	3 V		e3	.002 Amp	1,2,4,8	6 ns
MT48LC1M16A1-7S	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	SOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE				70 Cel		1MX16	1M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	16777216 bit	3 V		e3			5.5 ns
MT48LC2M32B2-7S	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words				3.3		32	SMALL OUTLINE				70 Cel		2MX32	2M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G86	3.6 V		Not Qualified	67108864 bit	3 V		e3			5.5 ns
MT48LC8M8A2-75L	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE				70 Cel		8MX8	8M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V		Not Qualified	67108864 bit	3 V		e3			5.4 ns
MT48LC4M16A2-7EL	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE				70 Cel		4MX16	4M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V		Not Qualified	67108864 bit	3 V		e3			5.4 ns
MT48LC2M32B2-8AS	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words				3.3		32	SMALL OUTLINE				70 Cel		2MX32	2M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G86	3.6 V		Not Qualified	67108864 bit	3 V		e3			6 ns
MT48LC1M16A1-8AS	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	SOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE				70 Cel		1MX16	1M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	16777216 bit	3 V		e3			6 ns
MT48LC16M4A2-8EL	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE				70 Cel		16MX4	16M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V		Not Qualified	67108864 bit	3 V		e3			6 ns
MT48LC2M32B2-6S	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words				3.3		32	SMALL OUTLINE				70 Cel		2MX32	2M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G86	3.6 V		Not Qualified	67108864 bit	3 V		e3			5 ns
MT48LC1M16A1-6S	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	SOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE				70 Cel		1MX16	1M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G50	3.6 V		Not Qualified	16777216 bit	3 V		e3			5.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.